ISSN:
1662-8985
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In the present paper, continuum fracture mechanics is used to analyze the Smart-Cutprocess, a recently established ion cut technology which enables highly efficient fabrication ofvarious silicon-on-insulator (SOI) wafers of very high uniformity in thickness. Using integraltransform and Cauchy singular integral equation methods, the mode-I and mode-II stress intensityfactors, energy release rate and crack opening displacements are derived in order to examine severalimportant fracture mechanisms involved in the Smart-Cut process. The effects of defect interactionand stiffening wafer on defect growth are investigated. The numerical results indicate that astiffener/handle wafer can effectively prevent the donor wafer from blistering and exfoliation, but itslows down the defect growth by decreasing the magnitudes of SIFs. Defect interaction also playsan important role in the splitting process of SOI wafers, but its contribution depends strongly on thesize, interval and internal pressure of defects. Finally, an analytical formula is derived to estimatethe implantation dose required for splitting a SOI wafer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/40/transtech_doi~10.4028%252Fwww.scientific.net%252FAMR.33-37.67.pdf
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