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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 607-609 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The range distributions of 10–120 keV 11B+ in polycrystalline Co, Ti, CoSi2, and TiSi2 targets have been measured by secondary ion mass spectrometry. The obtained projected ranges Rp and projected range stragglings ΔRp are within 25% and 10%, respectively, of those predicted using the Monte Carlo computer program trim. By comparison the one-dimensional Boltzmann transport calculation in suprem-3 tends to overestimate Rp by as much as 300% at the highest ion energies.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 1882-1886 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reverse-bias leakage of TiSi2/p+-n Si junctions is 〈10 nA/cm2 for 0.1-μm-deep p+-Si with a TiSi2 sheet resistance of 1.7 Ω/sq, and is essentially independent of carrier concentration, and the amount of B consumed during silicidation. Forward-bias current characteristics show that the TiSi2 contacts are ohmic with significant recombination currents and high-level injection at voltages below the series resistance limit. Post-silicidation annealing for 30 min at 920 °C, with or without an overlayer of borophosphosilicate glass, increases the majority-carrier concentration and does not cause B to diffuse out of the Si. Also, minority-carrier lifetimes show a twofold increase after annealing and this results in nearly ideal junctions with leakage that is dominated by diffusion currents. Thus, TiSi2/p+-n Si is thermally stable under conditions that are compatible with glass flow and reflow processing.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1223-1225 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrashallow junctions (∼60 nm) are obtained using low energy BF2 (5 keV) implants in crystalline Si. The variation of junction depth as a function of the dose rate is studied for doses of 1×1014 and 1×1015 cm−2. Boron diffusion is retarded in the tail region for the higher dose rates and consequently the junction depth decreases as compared to the lower dose rates. The residual defect density after a 950 °C, 10 s anneal for a dose of 1×1015 cm−2 is reduced for the higher dose rate as compared to the lower dose rate. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 21 (1994), S. 131-137 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: The need for improved characterization of materials used in the fabrication of semiconductor devices has been driven by the semiconductor industry's desire to increase device densities on substrate. This need is reflected in the analytical surface science community by efforts to develop methods for detection of trace impurities on semiconductor substrates at extremely low levels. With improvements in standard techniques continually occurring, and with new methods of trace analysis always being developed, it is important to assess the relative abilities of the suite of surface analysis techniques available for materials characterization and to develop well-characterized standard samples for these comparisons. This paper reports on a collaborative effort to review the capabilities of several approaches to trace surface analysis. As a test case, Ni contamination of Si wafers in the dose range 1014-1010 cm-2 has been chosen. The emphasis of this paper will be on the capabilities of SARISA (surface analysis by resonant ionization of sputtered atoms) as an example of laser post-ionization secondary neutral mass spectrometry for the detection of contaminants in the near-surface region. Results on analyses of the same standard samples by other techniques will also be presented. These techniques include total reflection x-ray fluorescence and heavy ion backscattering spectrometry. The results of this comparison show that there are several techniques that can accurately determine metal contaminations on Si wafers in this concentration range and that the method of choice depends on other considerations, such as speed or accuracy of analysis.
    Additional Material: 8 Ill.
    Type of Medium: Electronic Resource
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