Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 2163-2165
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We describe the growth and optical emission from strained InP quantum dots grown on GaP using gas-source molecular beam epitaxy. Self-organized island formation takes place for InP coverage greater than 1.8 monolayers on the (100) GaP surface. Intense photoluminescence from the dots is peaked at about 2.0 eV, blueshifted by 0.6 eV from the band gap of bulk InP due to strain, quantum size effects, and possibly Ga interdiffusion. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1361277
Permalink
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |