ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report on the 288 V-10 V DC- DC converter circuit using AlGaN/GaN HFETs forthe first time. The AlGaN/GaN HFET with a large current and a high breakdown voltage operationwas fabricated. That is, the maximum drain current was over 50 A, and the minimum on-resistancewas 70 mohm. The breakdown voltage was over 600 V. A DC-DC down-converter from input DC288 V to output DC 10 V was fabricated using these HFETs. It was confirmed that the switchingspeed of the AlGaN/GaN HFET was faster than that of Si MOSFET. The DC-DC down-converterwas fabricated using these HFETs. This converter was composed of a full bridge circuit using fourn-channel AlGaN/GaN HFETs. In the case of AlGaN/GaN HFET, a gate switching wave (Vgs) andsource-drain wave (Vds) were abrupt compared with those of using Si MOSFETs. In both cases, astable and constant output DC 10V was also obtained and the conversion efficiency of theconverters with AlGaN/GaN HFETs was 84%
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1321.pdf
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