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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of organic chemistry 56 (1991), S. 1663-1666 
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 442 (2006), S. 759-765 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements. A ferromagnetic crystal exhibits a stable and switchable magnetization that arises through the quantum mechanical phenomenon of exchange. There are ...
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] In a conventional superconductor, the binding of electrons into the paired states that collectively carry the supercurrent is mediated by phonons — vibrations of the crystal lattice. Here we argue that, in the case of the heavy fermion superconductors CePd2Si2 and ...
    Type of Medium: Electronic Resource
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  • 4
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] In doped perovskite manganites of the form Rj _ xAJVlnC)3, where R and A are rare-earth and alkaline-earth elements respectively, a marked polarization of charge carriers due to strong intra-atomic Hund interactions on the manganese sites leads to a dependence of the electrical resistivity on the ...
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1365-3059
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6287-6290 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Although colossal magnetoresistance (CMR) materials exhibit large changes in electrical resistance (up to 106%), large magnetic fields (several tesla) must be applied. To obtain a sizeable low-field effect (〈102% in several millitesla), it is necessary to incorporate structural discontinuities such as grain boundaries, or other types of interfaces. The potential for applications, however, remains limited because structural discontinuities increase electrical resistance by several orders of magnitude and hence create noise. Moreover, it has proven to be difficult to fabricate structural discontinuities reproducibly. We have attempted to investigate discontinuities that are purely magnetic via transport measurements through a precisely controlled number of magnetic domain walls of known area in thin film devices of the ferromagnetic CMR perovskite La0.7Ca0.3MnO3. A sharp low-field switching seen below ∼110 K is ascribed to the formation of a precise number of magnetic domain walls, each with resistance-area product 8×10−14 Ω m2 at 77 K. This is four orders of magnitude larger than expected, suggesting that the domain walls contain an additional structure. Our findings demonstrate that CMR devices are capable of low-noise low-field switching, and suggest the possibility of exploiting a hitherto unexpected intrinsic effect reproducibly and therefore commercially. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3388-3392 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe in detail a method by which to establish the magnetic anisotropy of thin ferromagnetic films on strongly paramagnetic substrates that are slightly anisotropic. The film that we consider is composed of the much studied manganite La0.7Ca0.3MnO3 and the substrate is NdGaO3, a good lattice match. Below a Curie temperature Tc of 260 K it was found, using a vibrating sample magnetometer, that 72±3 nm La0.7Ca0.3MnO3 films grown epitaxially by pulsed laser deposition on untwinned orthorhombic NdGaO3 (001) substrates exhibit uniaxial anisotropy with K=(3.6±0.1)×105 erg cm−3. The easy direction is along [110] of the pseudocubic unit cell, i.e., diagonal to the O–Mn–O bond directions and parallel to the side of the actual unit cell which is orthorhombic. We attribute an 11±4% loss of the low temperature moment to the proximity of the paramagnetic substrate rather than to stress. It is argued that stress is minimal such that the observed anisotropy must be magnetocrystalline. Both the reduction in moment and the anisotropy must be taken into account when designing thin film experiments. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7263-7266 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grain boundaries in doped lanthanum manganites have been shown to have a large low-field magnetoresistance. However, the mechanism of electrical transport across grain boundaries, and the origin of the low-field magnetoresistance, are not well understood. Models based on scattering at domain walls, spin-polarized tunneling and depression of the Curie temperature due to strain near the grain boundary have all been proposed. This article reports detailed studies of the transport properties of artificial grain boundaries formed in a variety of thin films grown on bicrystal substrates. Resistance versus field sweeps on all grain boundary devices showed strong low-field magnetoresistance and the effect of individual domain motion at the grain boundary has been observed in single grain boundaries. In all cases, current versus voltage characteristics were highly non-ohmic, and reminiscent of an electron tunneling process. However, the magnetic dependence of the current–voltage characteristics implies that the magnetoresistance may be unrelated to tunneling. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6970-6972 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO3 bicrystal substrates of 45° misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2722-2724 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report magnetic reversal processes in the magnetic tunnel junction (MTJ) based on a half metallic manganite, La0.7Ca0.3MnO3 by comprehensive spin-polarized tunneling (SPT) measurements. The large tunnel magnetoresistance up to 77% of (Rap−Rp)/Rap in the present MTJ is highly sensitive to the local magnetization fluctuation in the ferromagnetic electrodes and thus enables us to establish an instantaneous one-to-one correlation between the magnetization reversal and the SPT with the two-dimensional SPT measurements. We have found the systematic angular variations of the SPT features in the resistance-field curves, and based on the observed angular dependences, we propose a crucial role of the edge-domain pinning and the resultant multi-domain breakup for the magnetization reversal. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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