ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We report on the reliability of the gate oxide on C-face of 4H-SiC. Constant current stressTDDB measurement shows that QBD of the gate oxide of f200 [μm] on C-face is as much as 18 [C/cm2], which is much larger than the typical value (0.1[C/ cm2]) of that on Si-face of 4H-SiC. Thelifetimes of the gate oxide under the electric field of 3[MV/cm] are roughly evaluated from theleakage characteristics and obtained QBD. The estimated lifetimes of the gate oxide of f600 [μm] areabout 900 years. TDDB measurements of MOSs on two wafers, which have different dislocationdensities, show that reliability of gate oxide on C-face is insensitive to the dislocation density.Meanwhile, reliability of the gate oxide is sensitive to the surface defect density: it is significantlydegraded on the wafer, which has 2000 surface defects in a whole 2-inch wafer
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.783.pdf
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