ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
In this work, we have developed an innovative epitaxial growth process named the“Migration Enhanced Embedded Epitaxial” (ME3) growth process. It was found that at elevatedgrowth temperatures, the epitaxial growth at the bottom of the trenches is greatly enhanced comparedto growth on the sidewalls. This is attributed to the large surface diffusion length of reactant speciesmainly due to the higher growth temperature. In addition, it was found that this high temperature ME3growth process is not influenced by the crystal-orientation. Similar growth behavior was observed forstripe-trench structures aligned either along the [11-20] or [1-100] directions. No difference wasobserved in the electrical performance of the pn diodes fabricated on either oriented stripe geometry.The ME3 process can also be used as an alternative to ion-implantation technology for selectivedoping process
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/13/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.527-529.251.pdf
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