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  • 1
    Electronic Resource
    Electronic Resource
    Design considerations for diffraction coupled arrays with monolithically integrated self-imaging cavities (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1848-1850 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conditions for stabilization of in-phase or out-of-phase array eigenmodes in diffraction coupled diode laser arrays are derived and applied to several array architectures. The analysis predicts that the discrimination between these two eigenmodes is strongest in arrays with half Talbot distance long free-propagation region. In this geometry, the out-of-phase and in-phase near fields are, respectively, reproduced and channeled halfway between the original channel locations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101255
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  • 2
    Electronic Resource
    Electronic Resource
    Resonant optical transmission and coupling in phase-locked diode laser arrays of antiguides: The resonant optical waveguide array (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2183-2185 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniform linear arrays of antiguides have 100% optical transmission between elements when the interelement spacing is an integer number of leaky wave half-wavelengths in the lateral direction. Resonant in-phase-mode and out-of-phase-mode coupling occurs when the number of half-wavelengths is odd and even, respectively. Such devices are called resonant optical waveguide (ROW) arrays. The discrimination between the resonant array mode and adjacent array modes reaches a maximum in close proximity to the resonance. An AlGaAs/GaAs ROW diode laser array operating close to resonance is demonstrated. Devices with virtually uniform near-field intensity profiles operate in stable, diffraction-limited in-phase modes to drive levels in excess of three times threshold.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101159
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  • 3
    Electronic Resource
    Electronic Resource
    High-power vertical-cavity surface-emitting AlGaAs/GaAs diode lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1959-1961 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vertical-cavity surface emitters with rear mirrors made of conductive semiconductor stack reflectors (Rr =98%) were developed. Current confinement is obtained via an etch and regrowth technique with no need for dielectrics. Peak powers of 120 mW were achieved at room temperature. The external differential quantum efficiency is 15%.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101184
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    High-power, narrow single-lobe operation from 20-element phase-locked arrays of antiguides (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2060-2062 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure in-phase-mode operation is obtained from 20/21-element AlGaAs/GaAs antiguided arrays grown by two-step metalorganic chemical vapor deposition. Oscillation of out-of-phase modes is substantially suppressed by a built-in spatial filter: two sets of noncollinear antiguides separated by a 50-μm-long laterally unguided region, corresponding to the half-Talbot distance. Design considerations for 20- vs 10-element arrays are discussed. Diffraction-limited-beam operation (i.e., 0.8° lobewidth) is obtained to 1.5×threshold (90 mW, both facets). Beams with 1.3° lobewidth (1.6×diffraction limit) are obtained at 3×threshold and 300 mW (both facets). Devices with optimized facet coatings operate in a single, 1.5°-wide lobe (i.e., 1.8×diffraction limit) at 330 mW front-facet emitted power. The main lobe contains 80–87% of the total power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102105
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  • 5
    Electronic Resource
    Electronic Resource
    High-power, in-phase-mode operation from resonant phase-locked arrays of antiguided diode lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 10-12 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A resonant phase-locked array of antiguides is demonstrated for the first time. A 10/11 element AlGaAs/GaAs antiguided array is grown by two-step metalorganic chemical vapor deposition. Longitudinally, the structure consists of two noncollinear sets of antiguides separated by a half-Talbot distance, an ensemble that acts as a spatial filter. Out-of-phase-mode operation is suppressed both by this diffractive-type spatial filter and by large interelement loss. Resonant in-phase-mode operation is a result of the interelement spacing corresponding to one leaky-wave half wavelength in the lateral direction. Near the in-phase-mode resonance, array modes adjacent to the in-phase-mode are discriminated against because they have large radiation losses in the antiguided structure and significant edge diffraction losses in the spatial filter. Stable, diffraction-limited in-phase-mode beam patterns are achieved to 10 times threshold and 450 mW output power.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101741
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  • 6
    Electronic Resource
    Electronic Resource
    1.1 W continuous-wave, narrow spectral width (〈1 Å) emission from broad-stripe, distributed-feedback diode lasers (λ=0.893 μm) (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2072-2074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By etching a distributed-feedback grating directly into the Al-free optical confinement region of a 100 μm stripe InGaAs/InGaP/GaAs diode laser, 1.1 W cw front-facet output power has been obtained at 0.893 μm with a spectral full width at half maximum of 0.9 Å. These devices have 1 mm long cavities and shallow gratings with a coupling coefficient, κ∼7 cm−1. The combination of long device length and low grating coupling results in both efficient operation as well as a longitudinally uniform field profile. As a result, all excited lateral modes oscillate at the same longitudinal cavity resonance to high power levels. Using shallow gratings etched in an InGaP upper confinement layer permits the growth of a high-quality cladding layer over the grating surface yielding excellent device performance. Facet-coated (5%/95%) devices demonstrate external differential quantum efficiencies of 51% and peak wallplug efficiencies of 32% at 1.1 W cw output power. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122381
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  • 7
    Electronic Resource
    Electronic Resource
    730-nm-emitting Al-free active-region diode lasers with compressively strained InGaAsP quantum wells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 641-643 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 0.73-μm-emitting, Al-free active-region, strained (Δa/a(approximate)1.4%) InGaAsP single-quantum-well diode lasers have been grown by low-pressure metal–organic chemical-vapor deposition. A broad waveguide laser design with In0.5(Ga0.5Al0.5)0.5P cladding layers is utilized to achieve a large effective transverse spot size (d/Γ=0.433 μm) and to minimize carrier leakage from the active region. Threshold current densities of 514 A/cm2 (100-μm-wide stripe, L=1 mm), external differential quantum efficiencies of 60%, and characteristic temperature coefficients for the threshold current, T0, and external differential quantum efficiency characteristic temperature, T1, have values of 72 and 153 K, respectively. Continuous wave output powers of 1.4 W are obtained from facet-coated (90%/10%) devices operating at 735 nm. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120831
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  • 8
    Electronic Resource
    Electronic Resource
    High-performance, reliable, 730-nm-emitting Al-free active region diode lasers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2869-2871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Compressively strained InGaAsP quantum well (QW) active (λ=732 nm) diode lasers achieve 2.9 W continuous wave (cw) power from facet-coated (4%/95%) 100-μm-wide apertures, with reliable operation demonstrated at 0.5 W cw power. A broad waveguide structure is used to obtain a large transverse spot size (d/Γ=0.433 μm), resulting in a low internal loss (αi∼2 cm−1) and narrow transverse far-field beam width (θ1/2=38°). Record-high characteristic temperatures for the threshold current and the differential quantum efficiency (T0=115 K and T1=285 K) are obtained by growing on misoriented substrates. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122613
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  • 9
    Electronic Resource
    Electronic Resource
    Single-frequency antiguided laser array with buried distributed feedback grating (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7220-7223 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-frequency, in-phase mode operation has been obtained from a ten-element antiguided phase-locked array with Talbot-type filters by incorporating a buried distributed feedback grating using a three-step metalorganic chemical vapor deposition process. Stabilized frequency with 25 dB side-mode suppression ratio is achieved to 50 mW pulsed output power. In-phase or a mixture of in-phase and out-of-phase modes are observed in nonresonant (nonoptimized) devices. Means of improving device performance (e.g., use of resonant longitudinally uniform arrays or nearly resonant Talbot-filter arrays without gratings in the filter) are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356677
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  • 10
    Electronic Resource
    Electronic Resource
    High-power, diffraction-limited-beam operation from interferometric, phase-locked arrays of AlGaAs/GaAs diode lasers (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 3716-3718 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: 10/11-element interferometric phase-locked arrays with optimized facet coatings operate in array mode L=8, diffraction limited to 200 mW at 2.7 times threshold, and in beam patterns 1.4 times the diffraction limit to 290 mW at 4.3 times threshold. Unlike Y-junction-coupled arrays, the beam pattern quality is not sensitive to the facet(s) reflectivity value(s). Transformation to a single-lobe pattern requires a simple phase-corrector coating or plate. The device beam pattern as a function of the array geometry is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342601
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