Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    THE PROPERTIES OF FERROELECTRIC FILMS AT SMALL DIMENSIONS (2000)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 30 (2000), S. 263-298 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract This paper reviews the literature on size effects in ferroelectric materials, with an emphasis on thin film perovskite ferroelectrics. The roles of boundary conditions, defect chemistry, electrode interfaces, surface layers, and microstructure in controlling the measured properties of ferroelectric films, as well as the observed deviation from bulk properties are discussed. Examples of the manifestation of size effects in terms of the low and high field dielectric properties, the piezoelectric effect, and the leakage behavior of films are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.matsci.30.1.263
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Epitaxial nucleation and growth of chemically derived Ba2YCu3O7−x thin films on (001) SrTiO3 (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 5263-5272 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The nucleation and growth kinetics of epitaxial Ba2YCu3O7−x thin films prepared on (001) SrTiO3 by postdeposition annealing of a chemically derived intermediate layer were investigated in specimens quenched from the growth anneal. The films were produced by spin-on deposition of a metal-organic precursor solution at room temperature and ambient pressure, and subsequent postdeposition annealing to form Ba2YCu3O7−x (BYC). Integrated x-ray intensities of reflections from the majority, c-axis-normal epitaxial BYC in the films were analyzed as a function of time at annealing temperature. Data collected from specimens annealed at 730 and 750 °C were consistent with upward growth of the BYC from nuclei at the substrate surface with a constant growth rate. The linear transformation kinetics suggest the growth process is controlled by molecular processes at the BYC/intermediate interface, and is not rate limited by diffusion. The activation energy for film growth along its [001] axis was estimated to be ∼5 eV. The microstructure of fully annealed films grown on (001) SrTiO3 was, in general, similar to that of films prepared on (001) LaAlO3 using the same metal-organic deposition technique. The volume fraction of the c-axis in-plane epitaxial orientation in films on (001) SrTiO3 was, however, much smaller than in films prepared identically on (001) LaAlO3. Vicinal polishing of the SrTiO3 by as much as 2.5° off [001] in the direction of [101] increased the volume fraction of c-axis in-plane domains in the films somewhat. These domains were preferentially oriented so that their (001) planes were parallel to the steps in the SrTiO3 surface. The fraction of the films on vicinal SrTiO3 occupied by c-axis in-plane domains was, however, still significantly less than that present in BYC films prepared on nominally on-axis (001) LaAlO3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359278
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Preparation of biaxially aligned cubic zirconia films on pyrex glass substrates using ion-beam assisted deposition (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1027-1034 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Yttria stabilized zirconia films were deposited using ion-assisted, electron beam deposition (IBAD) on pyrex glass substrates heated to 600 °C. Films deposited under these conditions without IBAD exhibit fiber texture such that preferred (100) orientation exists perpendicular to the substrate. The orientation of the films has been studied as a function of ion bombardment angle, deposition rate, ion current density, and ion beam energy. Films deposited with IBAD at bombardment angles of less than 63° display strong (100) preferred orientation perpendicular to the substrate. Films having ion to atom ratios of 0.05 exhibit (220) biaxial alignment in the plane of the film. Best results were achieved for films with deposition rates of 2.4 A(ring)/s, beam energies of 75 eV and ion fluences of 18 μA/cm2. Increasing the beam energy to 300 eV increases the concentration of wire texture in these films. Films deposited at higher ion/atom ratios (0.11 and 0.25) produce films with alignments highly dependent on the angle of ion bombardment. Processing conditions have been shown, therefore, to effect absolute orientation, and not just the quality of the pre-existing orientation. The microstructures of the biaxially aligned films have been studied and this has allowed for a clarification of the growth mechanism of these films. A growth instability of the differing orientations during ion bombardment is shown to cause in-plane alignment rather than preferential etching of misoriented nuclei.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354949
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Orientation selection in thin platinum films on (001) MgO (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 6201-6204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Orientation selection in platinum films of ∼20 nm thickness deposited onto (001) MgO substrates by e-beam evaporation was investigated through ion beam channeling and x-ray diffraction. A mixture of crystallites having (111) and (001) orientation was observed in Pt films deposited over a range of substrate temperatures from 25 to 700 °C, with the (111) orientation dominant at low temperatures. The (111) orientation was present in these evaporated films at significantly higher substrate temperatures than reported for Pt films deposited by sputtering or pulsed laser deposition. Both orientations had strongly preferred in-plane orientations: [110] Pt//[110] MgO for the (001)-oriented crystallites and [110]Pt//[110] MgO for the (111). The orientation selection process was rationalized based on the expected relative interfacial energies for these two orientations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359147
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Deuterium in (Ba,Sr)TiO3 thin films: Kinetics and mechanisms of incorporation and removal during annealing (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6378-6388 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics of deuterium doping of and removal from polycrystalline (Ba,Sr)TiO3 (BST) thin films during annealing were investigated using secondary ion mass spectrometry depth profiling, and the data were correlated to changes in the electrical behavior of the films. Results for deuterium doping of exposed BST films on a Pt bottom electrode layer are consistent with incorporation of deuterium interstitial defects at the BST/Pt interface and "upward" diffusion toward the film surface. The incorporation kinetics of deuterium in Pt/BST/Pt capacitors are more complex and are greatly enhanced by the presence of the Pt top electrode. Removal of deuterium from D2/N2-exposed Pt/BST/Pt specimens during oxygen recovery anneals appears to be limited by the rate of an interfacial reaction at low temperatures (200–250 °C). The pre-D2 exposure leakage current properties of the BST capacitors were found to be largely recovered when the deuterium concentration in the films was reduced to ∼1019 cm−3 during post-D2 oxygen recovery anneals. Recovery annealing in vacuum, although it removed deuterium from the films, was found to result in an increase in leakage current density for annealing temperatures greater than 300 °C. These results suggest that introduction of large amounts of positive space charge into the BST films has a pronounced effect on the electrical properties of the Pt/BST interface. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367316
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Interdiffusion in epitaxial Co/Pt multilayers (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 637-645 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interdiffusion kinetics were measured using x-ray diffraction methods in epitaxial (001) and (111) Co/Pt multilayers in which the chemical modulation wavelength was in the range 2.5–4.0 nm. Multilayers were prepared by e-beam evaporation and were subsequently annealed in vacuum at temperatures between 275 and 375 °C. The activation enthalpy of the interdiffusion process in this temperature range was estimated using a novel approach for scaling nonlinear diffusion data. Activation enthalpies for interdiffusion in (001) and (111) multilayers were determined to be 1.1±0.2 and 0.8±0.2 eV, respectively. The low values obtained for the activation enthalpies may result from coherency strains or "short-circuit'' diffusion in the faulted, epitaxial multilayers. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364221
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Angular dependence of transport current near critical at fields to 4 T in metalorganic thin films (1994)
    Springer
    Journal of superconductivity 7 (1994), S. 303-308 
    Details
    ISSN: 1572-9605
    Keywords: Critical current ; high temperature superconductor ; thin film ; angular dependence ; magnetic field dependence ; YBCO ; metalorganic preparation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Values of the transport current have been obtained as a function of angle of the magnetic field to the plane of the thin film YBa2Cu3O7−d (YBCO) prepared by metalorganic deposition. Current flowed in thea, b planes at various angles to the applied magnetic fields to 4.2 T. Films with thicknesses near 350 nm were studied. For these thin films andH∥c a secondary maximum is observed whenJ c〉 1 MA/cm2. NearH∥a, b a large increase inI c is observed, and the sharpness, field dependence, and field directional dependence is discussed. The response to currents aboveI c is determined and the fit to a power lawV∼I n shows a strong correlation betweenI c andn.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00724558
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...