Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
72 (1998), S. 185-187
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present a comparative study of two-dimensional electron gas structures, which were grown on (511)A GaAs substrates and on conventional (100) GaAs substrates. The study included both normal interface and inverted interface structures. The (511)A presents consistently and substantially improved transport properties, whose origin can be traced to the growth dynamics of these surfaces. We conclude that (511)A GaAs promises to serve as an alternative and superior platform for realizing various n-type GaAs structures. © 1998 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.120679
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