ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystalswere experimentally investigated. Annealing temperature and annealing time dependence of acceptoractivation and activated hole’s behavior were examined. Poly-type recovery from the implantationinduced lattice disordering during the annealing was investigated. The existence of meta-stablecrystalline states for acceptor activation, and related scattering centers due to annealing is reportedTo achieve 100% acceptor activation and to reduce strain after ion implantation, annealing at 2000°Cfor 10 min. was required
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.585.pdf
Permalink