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  • 1
    Electronic Resource
    Electronic Resource
    Structural properties of Co/Au superlattices investigated by high-resolution transmission electron microscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4942-4950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion-beam-sputtered and electron-beam-evaporated Co/Au multilayers have been investigated with high-resolution transmission electron microscopy. The multilayers are found to exhibit a strong {111} texture and to contain Co predominantly in the cubic (fcc) phase. Misfit dislocations were directly observed and found to be located near the Co/Au interfaces. Structural features correlate with the magnetic anisotropy. Large crystalline units (vertical columns with ∼50 nm diameter reaching throughout the superlattice) are composed of small regions, a few nanometers in size (nanocrystallites), which are tilted towards each other by a few degrees. The microstructure of the large units remains unchanged for all investigated samples. The average size of the nanocrystallites and their mutual tilting angle vary systematically and are obviously correlated to the magnetic anisotropy. A high-crystalline quality (large nanocrystallites and small tilt angles) increases the value of the magnetic anisotropy constant Keffu. This behavior is unique for the presently investigated Co/Au multilayers independent of the fabrication technique. Moreover, these magnetostructural correlations may as well be valid for other magnetic/nonmagnetic metal superlattices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353813
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  • 2
    Electronic Resource
    Electronic Resource
    Metal-dopant-compound formation in TiSi2 and TaSi2: Impact on dopant diffusion and contact resistance (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 693-707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The refractory metal disilicides TiSi2 and TaSi2 were investigated for their usefulness as dopant diffusion sources. During furnace annealing and rapid thermal processing, strong decomposition reactions occur between the dopants D (B or As) and the respective silicide (MSi2) to form MxDy compounds. With the help of special sample preparation methods and various analytical techniques, the compound phases TiB2, TiAs, TaB2, and TaAs were unambiguously detected. The fraction of freely diffusing B in TaSi2 is determined to be below 5% of the total dose; by far, the major part of the dopant is bound within the TaB2 phase detected. Careful sample preparation and analysis of secondary-ion-mass spectrometry profiles is necessary to avoid artifacts caused by these compound particles. The MxDy-compound formation has detrimental consequences: The solubility of arsenic and even more of boron in TiSi2 and TaSi2 is limited to rather low-concentration levels (e.g., B in TaSi2: 4 × 1018 B/cm3 〈 CB(900 °C) 〈 1.6 × 1019 B/cm3) and the outdiffusion into poly- or monocrystalline silicon is strongly retarded. Also, the low interface dopant concentrations achievable result in unacceptably high values of contact resistance. The observations on metal-dopant- (M-D-) compound formation are demonstrated to agree well with the predictions from thermodynamic calculations on the respective M-Si-D system. The effects on junction formation are compared to the case of WSi2 and CoSi2, which, from a parallel study, are known not to form compounds. In all cases these comparisons support our statements on the tremendous impact of M-D-compound formation, because much improved data on diffusion and junction formation were obtained for CoSi2 and WSi2. The same holds for a comparison on contact resistances for silicide diffused junctions, which was performed for TiSi2 and CoSi2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349625
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  • 3
    Electronic Resource
    Electronic Resource
    WSi2 and CoSi2 as diffusion sources for shallow-junction formation in silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 708-719 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of B and As ions implanted into thin layers of WSi2 and CoSi2 on poly- or monocrystalline Si and the outdiffusion into the Si substrate during furnace annealing (FA) and rapid thermal processing (RTP) were investigated by several analytical techniques. Shallow junctions (depth xj 〈 100 nm) with interface concentrations Cint close to the solid solubility of the respective dopant in Si (Cint(approximately-greater-than)3×1020 cm−3 for As; (Cint (approximately-greater-than) 8 × 1019 cm−3 for B) were obtained with RTP. For FA above 800 °C, the diffusion of B from CoSi2 into Si results in a drop of Cint 〈 2 × 1019 cm−3 because of strong B segregation and probably reactive loss at the SiO2/CoSi2 interface. No evidence on metal-dopant-compound formation could be found. The dopant redistribution is demonstrated to be a superposition of lattice and grain-boundary diffusion, solubility limits, layer inhomogeneities, dopant segregation at the interface and grain boundaries, and probably phase transformation of the dopants segregated at the SiO2/silicide interface. Electrical results such as, e.g., CoSi2 diode leakage currents (≈1 nA/ cm2) and contact resistances ( 2–5 × 10−7 Ω cm2 for RTP) clearly show that the formation of shallow silicided junctions by diffusion from an implanted silicide is a highly useful technological approach.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349626
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  • 4
    Electronic Resource
    Electronic Resource
    Specific preparation procedures for failure analysis of (sub)micron areas in silicon devices
    Amsterdam : Elsevier
    Ultramicroscopy 52 (1993), S. 127-140 
    Details
    ISSN: 0304-3991
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Natural Sciences in General , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0304-3991(93)90026-T
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  • 5
    Electronic Resource
    Electronic Resource
    Structure investigations of thin carbon foils
    Amsterdam : Elsevier
    Nuclear Instruments and Methods in Physics Research Section A: 303 (1991), S. 79-87 
    Details
    ISSN: 0168-9002
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0168-9002(91)90767-K
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  • 6
    Electronic Resource
    Electronic Resource
    Determination of composition profile and atomic-scale roughness of GaAs/AlGaAs interfaces by high-resolution transmission electron microscopy
    Amsterdam : Elsevier
    Journal of Crystal Growth 123 (1992), S. 287-305 
    Details
    ISSN: 0022-0248
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0022-0248(92)90035-H
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  • 7
    Electronic Resource
    Electronic Resource
    Advanced transparent conductive oxide electrode for optoelectronic thin-film devices
    Amsterdam : Elsevier
    Solid State Communications 76 (1990), S. 1-3 
    Details
    ISSN: 0038-1098
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0038-1098(90)90286-K
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  • 8
    Electronic Resource
    Electronic Resource
    Metallurgy of a two-step approach for CVD-W contacts studied by TEM
    Amsterdam : Elsevier
    Applied Surface Science 53 (1991), S. 62-68 
    Details
    ISSN: 0169-4332
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0169-4332(91)90243-D
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  • 9
    Electronic Resource
    Electronic Resource
    Kinetics of titanium silicide formation by rapid thermal processing (1989)
    Springer
    Fresenius' Zeitschrift für analytische Chemie 333 (1989), S. 569-575 
    Details
    ISSN: 1618-2650
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Summary Auger electron spectroscopy (depth profiling and line shape analysis), X-ray diffraction, and cross-sectional transmission electron microscopy were employed to investigate the kinetics of titanium silicide formation by rapid thermal annealing in N2 and Ar ambients. A silicide is formed within only a few seconds at 620°–700°C. All the analysis techniques utilized reveal that the silicides primarily consist of sequential TiSi2 and TiSi phases. The TiSi2 is the metastable, poorly-conducting C49 modification. The TiSi2 growth was evaluated quantitatively and was shown to be limited by diffusion of Si through the silicide. For annealing in N2, the TiSi phase is stabilized compared to Ar annealing; additionally a titanium nitride forms near the surface and grows inward by another diffusion-limited process. When the TiSi and TiN reaction fronts approach the available Ti is consumed for these reactions; further silicide growth can only occur via complex phase transformations. The ratio of the activation energies for both diffusion processes was measured to be $$Q_{{\text{TiSi}}_{\text{2}} } /Q_{{\text{TiN}}} = 0.8 \pm 0.2$$ , in approximate agreement with literature data. The role of impurities for silicide growth will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00572378
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  • 10
    Electronic Resource
    Electronic Resource
    Low-Pressure chemical vapour deposition of tantalum pentoxide films for ulsi devices using tantalum pentaethoxide as precursor (1992)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 299-308 
    Details
    ISSN: 1057-9257
    Keywords: LPCVD ; Tantalum pentoxide ; High dielectric constant ; ULSI devices ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A laminar flow low-pressure chemical vapour deposition (LPCVD) system (LAM IntegrityTM) has been used to deposit tantalum pentoxide (Ta2O5) from Ta(OEt)5 films in the presence of oxygen (O2) at 470 °C at a typical deposition rate of 4 nm min-1. Uniformities of 〈1.5% (SD 1σ) over a 150 mm silicon substrate were obtained. The layers were annealed under different conditions. It was discovered that the films did not change their stoichiometry as determined by Rutherford backscattering (RBS). The as-deposited films were amorphous but became crystalline (β-Ta2O5) at temperatures 〉 700 °C. The transmission electron microscopy (TEM) results on crystallisation behaviour were supported by X-ray diffraction data. The electrical properties of the Ta2O5 films have been characterised using MIS (metal/insulator/silicon) capacitor structures. Leakage values of 〈10-6 A cm-2 at 6 MV cm-1 equivalent applied electric field and breakdown strengths of 〉7 MV cm-1 at 1.6 μA were obtained for annealed layers. Compound dielectric constants (native silicon oxide thickness of about 2.5 nm plus Ta2O5 of various thicknesses) between 14 and 〉30 have been measured. The electrical properties reveal the potential use of Ta2O5 as a storage capacitor dielectric in 64 and 256 Mbit DRAM (dynamic random access memory) devices.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860010607
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