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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 2318-2322 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Focused ion beam Ga+ implantation through Ti metal (ITM) and TiSi2 (ITS) layers, followed by rapid thermal annealing (RTA), has been investigated for application in self-aligned silicide technology. The Ga+ energy was varied from 25 to 50 keV at doses of 1×1013 and 1×1015 cm−2 followed by RTA at 600 °C for 30 s. Depth profiles of the Ga implants were obtained by performing secondary-ion mass spectrometry. It was observed that higher-energy and higher-dose implants yielded good quality p+-n junction characteristics. Diodes were fabricated to obtain the electrical properties of these silicided junctions. At higher implant energies (≥40 keV) and all doses, I-V characteristics of ITS diodes showed 100 times lower leakage currents (Ir) than ITM diodes. For low-energy (〈40 keV)/high-dose implantation the ITS diodes showed a slight improvement in Ir over the ITM diodes, whereas for low-energy/low-dose implantation the same Ir was observed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1101-1103 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A field-enhanced Si–Si bond-breakage mechanism is presented which accurately describes the time-dependent dielectric breakdown behavior recently reported for thin-film SiO2 dielectrics over a wide range of fields and temperatures. The breakdown kinetics (both the field and temperature dependence) are shown to be consistent with a field-dependent dipolar energy term associated with an oxygen vacancy which serves to reduce the activation energy required for Si–Si bond breakage. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1513-1523 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The underlying physics behind the success of the thermochemical E model in describing time-dependent dielectric breakdown (TDDB) in SiO2 thin films is presented. Weak bonding states can be broken by thermal means due to the strong dipolar coupling of intrinsic defect states with the local electric field in the dielectric. This dipole-field coupling serves to lower the activation energy required for thermal bond-breakage and accelerates the dielectric degradation process. A temperature-independent field acceleration parameter γ and a field-independent activation energy ΔH can result when different types of disturbed bonding states are mixed during TDDB testing of SiO2 thin films. While γ for each defect type alone has the expected 1/T dependence and ΔH shows a linear decrease with electric field, a nearly temperature-independent γ and a field-independent ΔH can result when two or more types of disturbed bonding states are mixed. The good agreement between long-term TDDB data and the thermochemical model suggest strongly that the oxygen vacancy is an important intrinsic defect for breakdown and that field, not current, is the primary cause of TDDB under low-field conditions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1982-1984 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incubation time (ti) for the onset of porous Si formation by stain etching in HF:HNO3:H2O was observed to be a strong function of dopant type and concentration. For B-doped p-Si, ti increased significantly with substrate resistivity (ρ), from ∼0.5 min for 0.004 Ω cm to ∼9 min for 50 Ω cm. P-doped n-Si substrates exhibited a ti which decreased with increasing ρ, from ∼10 min for 0.15 Ω cm to ∼8 min for 20 Ω cm. We have utilized the difference in ti between n- and p-type Si to produce selective area photoluminescence (PL) by Ga+ focused ion beam (FIB) implantation doping and B+ broad beam implantation doping of n-type Si. Using 30 kV FIB Ga+ implantation, PL patterns with submicrometer resolution have been obtained for the first time.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1833-1835 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si nanostructures have been fabricated by focused ion beam implantation (FIB) followed by etching in KOH/IPA. The FIB implantation into Si at a sufficiently high dose (≥1015/cm2) renders the local Si region much less susceptible to chemical etching. This effect has been observed for FIB implantation with Ga, Au, and Si ions. After etching, the implanted layer forms a cantilever structure whose thickness is a function of the implantation energy. At low energies (〈30 keV) nanometer-scale Si structures can be formed using this technique.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3721-3723 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A temperature-independent field acceleration parameter γ and a field-independent activation energy ΔH0 can be produced when different types of disturbed bonding states are mixed during time-dependent breakdown testing of SiO2 thin films. While γ for each defect type alone has the expected 1/T dependence and ΔH0 shows a linear decrease with electric field, a nearly temperature-independent γ and a field-independent ΔH0 can result when two or more states are mixed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2111-2113 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Visible room-temperature photoluminescence (PL) has been observed from stain-etched polycrystalline Si thin films. Poly-Si thin films deposited on oxidized Si and quartz substrates became porous (PoSi) after stain-etching in a 1:3:5 solution of HF:HNO3:H2O. Under UV excitation, the stain-etched doped and undoped poly-Si films produce uniform orange-red (∼650 nm) luminescence very similar to that obtained from stain-etched crystalline Si substrates. Stained amorphous thin films did not exhibit photoluminescence. Luminescent patterns with sub-micrometer (∼0.6 μm) dimensions have been obtained for the first time from PoSi produced from poly-Si films.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1721-1723 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The impact of a deuterium (D2) sinter under two different annealing conditions, 450 °C/60 min and 450 °C/90 min, was studied and compared to the traditional forming gas (FG) sinter. Channel hot carrier (CHC) measurements indicated that while the D2 sinter for 60 min improves the lifetime of the devices by 10× over the FG sinter, an additional increase in the D2 anneal time actually has a negative impact on lifetime. DC current–voltage measurements also showed that samples sintered in D2 ambient for 60 min were the least prone to degradation under stress. Gated diode results showed no appreciable amount of difference in the initial interface state density among the different samples. Secondary ion mass spectroscopy indicated that neither poly nor salicide appears to be a complete barrier to D2 diffusion. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1419-1420 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: SiC/Si heterostructures have been patterned by reactive ion etching with CHF3/O2 to produce SiC-covered and Si-exposed regions with lateral dimensions of 2.5 to ∼500 μm. The patterned samples were then anodized in HF/ethanol solutions. Short anodization times (〈3 min) result in selective-area UV-induced visible photoluminescence (PL), with a peak located at 650 nm, being observed at 25 °C from only the SiC-covered regions. The emission is generated by porous Si (PoSi) selectively formed under the SiC cap and transmitted through the wide band-gap SiC layer. Longer etching times result in nonselective PL.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 554-556 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrochemical capacitance-voltage (ECV) profiling technique is employed to measure the active carrier concentration in nanoscale layers fabricated by focused ion beam (FIB) implantation of 3 to 10 keV Ga+ ions into crystalline Si. The carrier concentration profiles obtained by ECV indicate the ability of this technique to probe depths as shallow as 2–3 nm and with a nanometer-scale depth resolution. The carrier concentration obtained by ECV matches well with the Ga atomic concentration profile detected by secondary-ion mass spectroscopy, but is almost an order of magnitude higher than that provided by the spreading resistance profile technique.
    Type of Medium: Electronic Resource
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