ISSN:
1090-6487
Keywords:
72.80.Ey
;
72.20.My
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The conductance of doped n-GaAs films is studied experimentally as a function of magnetic field and temperature in strong magnetic fields right up to the quantum limit (ħωc = E F). The Hall conductance G xy is virtually independent of temperature T until the transverse conductance G xx is quite large compared with e 2/h. In strong fields, when G xx becomes comparable to e 2/h, G xy starts to depend on T. The difference between the conductances G xx at the two temperatures 4.2 and 0.35 K depends only weakly on the magnetic field H over a wide range of magnetic fields, while the conductances G xx themselves vary strongly. The results can be explained by quantum corrections to the conductance as a result of the electron-electron interaction in the diffusion channel. The possibility of quantization of the Hall conductance as a result of the electron-electron interaction is discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.567653
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