Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 153-156
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The dominant moving species during cobalt monosilicide and cobalt disilicide formation has been examined using a thin tantalum layer as a metal marker. The marker data obtained following the formation of CoSi from Co2Si showed that monosilicide growth was essentially due Si diffusion only. When used to study CoSi2 formation, the data indicated that silicon was also the dominant moving species during disilicide formation, although a noninsignificant amount of cobalt diffusion was also observed to take place. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.360923
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