ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract Selective regrowth, which involves the growth of a device structure, patterning, etching and epitaxial regrowth of another device structure is an important technique for monolithic integration. The nature of the surface before the regrowth is crucial for realizing good quality regrown devices. In this study, the effect of different GaAs surface preparation processes on the electrical and optical characteristics of a regrown pseudomorphic high electron mobility transistor (PHEMT) is studied. Using photoluminescence, Hall, atomic force microscopy and d.c. and microwave measurements on devices, an optimized process sequence has been identified to fabricate PHEMT structures with equivalent characteristics of those grown on epiready wafers.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008997814604
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