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  • 1
    Electronic Resource
    Electronic Resource
    Positron Lifetime Study on Semiconductor Thin Films (1997)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 255-257 (Sept. 1997), p. 714-717 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/02/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.255-257.714.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Band-edge discontinuities of strained-layer InxGa1−xAs/GaAs heterojunctions and quantum wells (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1339-1341 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The conduction-band discontinuity (ΔEc ) and the band-gap offset (ΔEgh) of InxGa1−xAs/GaAs multiple quantum wells grown on GaAs substrates by molecular beam epitaxy are investigated for 0〈x〈0.3. The band gap of strained InxGa1−xAs , determined from the excitonic transition of room-temperature transmission spectra, is found to be linearly dependent on x and is in good agreement with the calculated values. The band-gap offset is found to be ΔEgh =1.15x eV. The conduction-band offset, compiled from published data, is ΔEc =0.75x eV, and thus (ΔEc /ΔEgh)=0.65 independent of x.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101649
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  • 3
    Electronic Resource
    Electronic Resource
    Direct observation of the Cu2−xSe phase of Cu-rich epitaxial CuInSe2 grown on GaAs (001) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6926-6928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu2−xSe is an important impurity phase of the ternary chalcopyrite semiconductor CuInSe2 associated with Cu/In composition ratios greater than unity. We have observed directly in a prototypical epitaxial system the formation of Cu2−xSe on Cu-rich CuInSe2 thin films epitaxially grown on GaAs (001). Atomic force microscopy measurements of the surface topology of as-grown films clearly show faceted rectangular crystallites with dimensions on the order of 100 nm. Cross-sectional transmission electron microscopy measurements of the Cu-rich CuInSe2 showed rectangular protrusions on the surface as well as wedge shaped facets in the CuInSe2 film. Two-dimensional reciprocal space x-ray mapping of the as-grown Cu-rich CuInSe2 showed the in-plane lattice constant of the Cu2−xSe phase to be partially strained to the CuInSe2 layer. The presence of the β phase of Cu2−xSe is also presented as an alternative explanation for Cu–Pt ordering reports in CuInSe2 that have appeared in the literature. Strain-related surface undulations observed only in Cu-rich CuInSe2 are also linked to the presence of this strained Cu2−xSe layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368991
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of the surface Cu2−xSe phase on the growth and properties of CuInSe2 films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1630-1632 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Drastic changes in average molecularities (m=Cu/In) from m(very-much-greater-than)1 to m=0.92–0.93 and in hole concentrations from p(very-much-greater-than)1019 cm−3 to as low as p=7.5×1016 cm−3 have been observed in molecular beam epitaxy grown CuInSe2 after selective etching of the Cu–Se phase by a KCN aqueous solution; high hole concentrations and Cu-excess compositions of the as-grown films were attributed to the Cu–Se phase. On the other hand, well-defined photoluminescence emissions were found characteristic of intrinsic CuInSe2. The presence of the Cu–Se phase made possible the growth of high-quality CuInSe2 epitaxial films at a temperature well below the melting point of any Cu–Se compound. Surface topology measurements showed that the surface of the as-grown films was not fully covered by Cu–Se grains, leaving holes with depths of 200–300 nm after KCN etching. The enhanced two-dimensional growth and the reduced defect concentration imply that a very thin Cu-excess surface layer controls the growth of CuInSe2 when grown under Cu-excess conditions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123639
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  • 5
    Electronic Resource
    Electronic Resource
    Static analysis of off-axis crystal film growth onto a lattice-mismatched substrate (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 608-610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface construction of tilt growth that is sometimes observed for epilayer growth on a lattice mismatched substrate is modeled on the basis that tilt relieves misfit strain in the epilayer. In this model off-axis misfit accommodation is assumed to be due to only tilt dislocations or tilt dislocations combined with misfit dislocations. The average interval between successive dislocations which are formed along the interface can be estimated using the lattice units of both materials and that of the epilayer in another principal axis direction; the tilt angle can also be calculated geometrically. The tilt angle predicted by this model agrees well with experimental results for several examples of mismatched epilayer growth by molecular-beam epitaxy. The model suggests a method to grow a single domain of stress-free epilayer by using a substrate cut to an angle that allows off-axis fit to the lattice unit of the epilayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385801
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  • 6
    Electronic Resource
    Electronic Resource
    Uniaxial locked epitaxy of ZnO on the a face of sapphire (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1801-1803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]||[112¯0] and 〈112¯0〉||[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to 〉0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311603
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  • 7
    Electronic Resource
    Electronic Resource
    Excitonic emissions from CuInSe2 on GaAs(001) grown by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1289-1291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 epitaxial films grown on (001)-oriented GaAs substrates by molecular beam epitaxy have been characterized by means of low temperature photoluminescence spectroscopy at T=2–102 K. Distinct emission lines were observed near the band gap, and have been investigated further with varying sample temperature. An emission at 1.0386 eV (EX1) became broader with increasing sample temperature, and still remained up to T=102 K. A distinct, sharp emission at 1.0311 eV (IX1) which disappeared at a significantly lower temperature than the other peaks was observed only in films with weak donor-related emissions. We attribute such emissions to the ground-state free exciton [FEn=1] and exciton bound to neutral acceptor [A0,X], respectively. The band gap of CuInSe2 epitaxial films was also determined to be Eg=1.046 eV at 2 K using the reported exciton binding energy of Eex=7 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114400
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  • 8
    Electronic Resource
    Electronic Resource
    Electroabsorption effects in InxGa1−xAs/GaAs strained-layer superlattices (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 475-477 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electroabsorption of strained-layer Inx Ga1−x As/GaAs superlattice structures grown by molecular beam epitaxy on GaAs substrates was experimentally investigated. Its spectral characteristics were found to be similar to those of Franz–Keldysh electroabsorption of bulk semiconductor materials, and suggest that the widths of ground-state electron and hole minibands might be larger than the maximum tilt of the potential well caused by an applied voltage. We attribute the electroabsorption of such superlattices to photon-assisted tunneling between ground-state electron and heavy hole minibands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102770
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  • 9
    Electronic Resource
    Electronic Resource
    High quality CuInSe2 films grown on pseudo-lattice-matched substrates by molecular beam epitaxy (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 647-649 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 films have been grown by molecular beam epitaxy on pseudo-lattice-matched substrates that consist of a 1-μm-thick In0.29Ga0.71As layer grown on a linearly composition-graded InxGa1−xAs buffer (0≤x≤0.29) grown in turn on GaAs (001). The properties of these films have been compared with those of the films grown directly on GaAs (001). High resolution x-ray diffraction analysis on CuInSe2 grown on pseudo-lattice-matched substrates indicated substantial reduction on residual strain in the CuInSe2 films. A photoluminescence spectrum dominated by sharp free exciton emissions has been observed for the first time from CuInSe2 films indicative of significant improvement in crystalline quality and substantial reduction in the point defect density. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117793
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  • 10
    Electronic Resource
    Electronic Resource
    Determination of the composition of strained tetragonal epilayers (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 761-763 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Elasticity theory is applied to calculate the total strain present in a tetragonal symmetry epilayer due to heteroepitaxial misfit. By relating pseudobinary alloy composition to the lattice constants of the epilayer, it is shown that the composition of a pseudobinary epilayer can be determined from measurement of the strained epilayer lattice constants. This is accomplished by expressing the misfit strain in terms of the composition and the individual lattice constants of the components of the epilayer and using Vegard's rule. As a result, determination of the composition of two chalcopyrite symmetry epilayers from x-ray diffraction measurements is demonstrated. The approach presented here is general and can be applied to any substrate-epilayer combination in the elastic limit. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117883
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