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  • 1
    Electronic Resource
    Electronic Resource
    Platinum-silicide formation during rapid thermal annealing: Dependence on substrate orientation and pre-implanted impurities (1991)
    Springer
    Applied physics 53 (1991), S. 168-171 
    Details
    ISSN: 1432-0630
    Keywords: 73.60.A
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The kinetics of Pt-silicide formation during rapid thermal annealing has been studied as a function of silicon-substrate orientation ((111), (011), and (001)) and type of pre-implanted impurity in the silicon substrate (As, Kr, and Ge). Rutherford backscattering spectrometry, transmission electron microscopy, and four-point probe resistivity measurements were used for this investigation. In the case of Pt2Si growth, both an orientation and impurity dependence was observed; the PtSi growth, however, was found to be independent of these parameters except in the case of As pre-implantation for which a retardation was found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323878
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  • 2
    Electronic Resource
    Electronic Resource
    The chemical interaction between high-concentration, mixed-ion-implanted group-III and -V impurities in silicon (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 410-421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-concentration, mixed group-III (In, Ga)/group-V (P,As) -implanted silicon single crystals have been studied by combining Rutherford backscattering spectroscopy/channeling spectrometry, Hall/resistivity measurements, transmission electron microscopy, and perturbed γγ angular correlation. A variety of processes and physical properties of the implanted layers are found to be dramatically changed in the mixed compared to the single implants. These include solid-phase recrystallization, redistribution of group-III and group-V atoms, phase nucleation and separation, lattice location of the impurity atoms, and electrical activation of the group-V atoms. The cause of these changes on a microscopic level is shown to be a strong chemical interaction between the donor and acceptor atoms, resulting in the formation of AIIIBV chemical compounds. For the As/In and P/In in Si systems, the formation of moleculelike AIIIBV complexes with donor and acceptor atoms sitting in substitutional silicon lattice sites is directly revealed by perturbed angular correlation measurements. A remarkable difference in the high-temperature annealing behavior is found between In- and Ga-doped, mixed implants: The precipitates found after high-temperature annealing in the In-doped samples are concluded to be mainly metallic particles whereas those found in the Ga-doped samples are AIIIBV compound precipitates coherent to the host lattice. The thermal stability of the AIIIBV compounds in silicon is suggested to be dependent on both the strength of the chemical bonds between the donor and acceptor atoms and the lattice mismatch between silicon and the crystalline phase of the AIIIBV compound.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351869
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  • 3
    Electronic Resource
    Electronic Resource
    Si self-interstitial injection from Sb complex formation in Si (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 3254-3259 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has recently been established that Si self-interstitials are generated during annealing of high-concentration Sb layers in Si. In the present work, we make use of samples grown with molecular-beam epitaxy. We monitor, at different times and temperatures, the diffusion enhancement or retardation of deep B or Sb marker layers next to a 1.1×1020 cm−3 Sb box, as well as the formation of Sb precipitates within the box. It is concluded that the interstitials are not associated with precipitate growth, but that they are generated from formation of Sb-vacancy complexes, primarily involving 2 Sb atoms. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289234
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  • 4
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of high concentration mixed As/In- and P/In-implanted silicon single crystals (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3953-3956 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of group-V donor impurities on the behavior of indium atoms implanted into silicon single crystals has been studied by Rutherford backscattering spectrometry/channeling spectrometry, and differential Hall-effect/resistivity measurements. Flat arsenic or phosphorus profiles of concentrations between ∼1.4×1020 cm−3 and 3×1020 cm−3 were produced by As+ or P+ implantation followed by rapid thermal annealing (RTA) (20 s, 1100 °C). Subsequently In was implanted to peak concentrations of 1.7×1020 cm−3 or 3.5×1020 cm−3 and annealed by RTA (15 s, 700–1050 °C).Compared to single indium implants, the presence of the preimplanted group-V impurities is found to reduce the redistribution of the implanted indium atoms during RTA and to increase the concentration of indium atoms incorporated on (or close to) lattice sites (up to ∼2×1020 cm−3). The value of the indium substitutional fraction is found to be dependent on anneal temperature and type of donor impurity. A reduction in the free-electron concentration is observed in both the phosphorus and arsenic predoped samples at the same depths as that of the indium atoms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346281
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  • 5
    Electronic Resource
    Electronic Resource
    The nature of electrically inactive antimony in silicon (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1908-1917 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Supersaturated solutions of substitutional, electrically active Sb in 〈100〉 silicon single crystals have been obtained by ion implantation, followed by short-duration incoherent-light annealing. Substitutional and nonsubstitutional fractions have been studied as functions of implanted dose and anneal temperature by Rutherford backscattering and channeling techniques, transmission-electron microscopy, Hall-effect and resistivity measurements (combined with layer removal), and Mössbauer spectroscopy. The maximum electrically active concentration, which can be incorporated on undisturbed substitutional sites, is found to be 4.5×1020 Sb/cm3 for 700 °C annealing. Upon further annealing, the supersaturated solution is reduced and approaches the Trumbore solubility value at temperatures of about 1100 °C. The Sb going out of solution is shown for the first time to be created in two different surroundings: Sb is predominantly found in Sb-vacancy complexes for low doses and low annealing temperatures and in Sb precipitates for high doses and/or high annealing temperatures. Complete agreement is found between substitutional fractions derived from Mössbauer spectroscopy and electrically active fractions from Hall-effect measurements, whereas the substitutional fractions from channeling measurements are significantly higher. The experiments are not conclusive as to whether this difference is due to the fraction of Sb in Sb-vacancy complexes or in coherent Sb precipitates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336419
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  • 6
    Electronic Resource
    Electronic Resource
    Self-organization of GeAs nanodots in relaxed Si0.5Ge0.5 alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3494-3496 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the bimodal distribution and long-range ordering of GeAs nanodots obtained in strain-relaxed epitaxial Si0.5Ge0.5 alloy layers after arsenic implantation and rapid thermal annealing. GeAs dots of two different average sizes around 15 and 55 nm are found after high temperature rapid thermal annealing. The larger dots are of elliptical shape and located at the surface region; they are distributed preferably along 〈110〉 directions which correlates well with the observed cross-hatch pattern. The origin of the bimodal precipitate distribution as well as of the long-range ordering effect of the GeAs nanodots is discussed in terms of strain-induced nucleation and diffusion-limited growth. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418262
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  • 7
    Electronic Resource
    Electronic Resource
    Isoconcentration studies of antimony diffusion in silicon (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2173-2178 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of Sb in Si at concentrations around its solid solubility has been studied by isoconcentration experiments. The samples, grown by molecular-beam epitaxy, had constant Sb121 background dopings and a Sb123 spike embedded in this background. The diffusion was followed as a function of Sb background concentration at two different temperatures of 872 and 1019 °C by secondary ion mass spectrometry, differential Hall/resistivity measurements, and transmission electron microscopy. At concentrations exceeding the solid solubility Sb precipitates and interstitial-type dislocation loops were observed. At these concentrations the diffusivity decreased with increasing Sb background concentration. At concentrations below both the solid solubility and the intrinsic carrier concentration, for the highest diffusion temperature of 1019 °C, the diffusivity increases with increasing Sb background doping. This behavior is discussed considering mobile Sb2V complexes. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364286
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  • 8
    Electronic Resource
    Electronic Resource
    Electronic defect levels in relaxed, epitaxial p-type Si1−xGex layers produced by MeV proton irradiation (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1180-1183 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Proton-irradiation-induced electronic defects in relaxed, epitaxial p-type Si1−xGex layers grown by molecular-beam epitaxy have been investigated by deep level transient spectroscopy (DLTS) for 0≤x≤0.25. Three dominating lines in the DLTS spectra have been observed and correlated to the divacancy, interstitial carbon, and the interstitial-boron–substitutional-carbon pair. For all three levels the activation enthalpy relative to the valence band decreases with increasing Ge content. Annealing studies demonstrated that the annealing of the defect level, identified as interstitial carbon, is retarded with increasing Ge content, while the annealing temperatures of the two other defects are similar to those observed in silicon. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365554
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  • 9
    Electronic Resource
    Electronic Resource
    MeV ion implantation induced damage in relaxed Si1−xGex (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2208-2218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The damage produced by implanting, at room temperature, 3-μm-thick relaxed Si1−xGex alloys of high crystalline quality with 2 MeV Si+ ions has been studied as a function of Ge content (x=0.04, 0.13, 0.24, or 0.36) and Si dose in the dose range 1010–2×1015 cm−2. The accumulation of damage with increasing dose has been investigated by Rutherford backscattering spectrometry, optical reflectivity depth profiling, and transmission electron microscopy. An enhanced level of damage, and a strong decrease in the critical dose for the formation of a buried amorphous layer in Si1−xGex is observed with increasing x. Electron paramagnetic resonance studies show that the dominant defects produced by the implantation are Si and Ge dangling bonds in amorphouslike zones of structure similar to a-Si1−xGex films of the same x, and that the effect of increasing the ion dose is primarily to increase the volume fraction of material present in this form until a continuous amorphous layer is formed. A comparative study of the optically determined damage in the alloys with the use of a damage model indicates a significant increase in the primary production of amorphous nuclei in the alloys of Ge content x〉0.04. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364288
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  • 10
    Electronic Resource
    Electronic Resource
    Surface morphology of silicon–tin alloys grown by molecular beam epitaxy on Si and Si1−xGex substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 394-396 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology and bulk structure of both strained (0.01≤x≤0.053) and strain-free Si1−xSnx (x=0.055) layers grown by molecular beam epitaxy on (001) Si and Si1−yGey substrates have been investigated by atomic force and transmission electron microscopy. The surfaces of all Si1−xSnx layers were found to have a mazelike structure composed of rectangular features faceted primarily by {113} planes. Transmission electron microscopy images of the alloys revealed columnar structures originating at the interface between the alloys and the substrates. The formation of the observed surface morphologies and the columnar structure is attributed to the surface-growth processes modified by the Sn atoms as compared to the growth of pure Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118072
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