Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Scanning tunneling microscopy and scanning tunneling spectroscopy of self-assembled InAs quantum dots (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 96-98 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present cross-sectional scanning tunneling microscopy images and scanning tunneling spectroscopy results of InAs quantum dots grown on GaAs. The samples contain 12 arrays of quantum dots. The analysis of the scanning tunneling microscope images reveals the self-alignment of the dots as well as the different dot interfaces with the under- and overgrown GaAs layers. We measure the strain distribution along the [001] direction in the (110) plane. The roughness of the dot interfaces along the [1¯10] direction is also estimated and local spectroscopy of the dots evidences the electronic confinement (measured gap of 1.25 eV compared with 0.4 eV for bulk InAs). © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121792
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Influence of barrier height on scanning tunneling spectroscopy experimental and theoretical aspects (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 569-571 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning tunneling spectroscopy allows the determination of the density of states of the involved electrodes as well as the associated barrier height. We have measured the barrier height between tungsten tip and the GaAs (110) surface with a scanning tunneling microscope (STM) in ultrahigh vacuum. When the tunneling junction exhibited a low barrier height, we observed and explained an apparent widening of the GaAs gap which can mislead the real doping concentration of the sample. A theoretical model based on the self-consistent Keldysh–Green functions formalism is used to calculate the STM current. It shows a possible lowering of the barrier height according to the adsorption of As or Ga atoms on the apex of the tungsten tip. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120762
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Nanoscale desorption of H-passivated Si(100)–2×1 surfaces using an ultrahigh vacuum scanning tunneling microscope (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3887-3892 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanoscale desorption of the Si(100)–2×1 hydrogen terminated surface has been achieved using a scanning tunneling microscope (STM) in an ultrahigh vacuum chamber. We have studied the patterned linewidth as a function of the sample bias and the dose, either with the feedback servo loop on or off. We propose a simple analytical model to explain the variation of the linewidth versus the electron dose. Finally, we show that the best resolution is obtained for pulsed voltages with the STM feedback servo loop on. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369760
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    An Auger and electron energy-loss study of reactions at the Ti-SiO2 interface (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8168-8176 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, we use Auger electron spectroscopy and electron energy-loss spectroscopy in order to investigate the room-temperature formation of the Ti/SiO2 interface and its reactivity upon annealing. We perform anneals in the temperature range 200–900 °C for which the phenomena involved are discussed with respect to the Si oxide and Ti film thicknesses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347472
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Thermally assisted formation of silicon islands on a silicon-on-insulator substrate (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 106-111 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the self-formation of nanometer-size silicon islands on a silicon-on-insulator (SOI) substrate that is associated with simple thermal treatment in the range of 500–900 °C. We study the island formation process versus the temperature of the thermal annealing, the thickness of the top silicon layer, and the presence of a native oxide on this top layer. The island size distribution is also studied. To follow the chemical evolution of the top layer, we used in situ Auger electron spectroscopy in an ultrahigh vacuum chamber. The island morphology is studied using ex situ atomic force microscopy (AFM). The formation temperature increases with the thickness of the top silicon layer and can be explained by thermal stress induced at the Si/SiO2 interface. From a technological point of view, this study shows the limitation of a SOI substrate with a thin silicon top layer under thermal treatment. On the other hand, it opens up an easy way in which to build silicon dots on an insulator. Finally, we present preliminary data that show the possibility of charging these nanocrystallites with an AFM tip. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1420761
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    H–Si doping profile in GaAs by scanning tunneling microscopy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3278-3280 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen incorporation in n-type Si-doped GaAs layers results in the neutralization of the active dopants and a change of the conductivity along the growth direction. To characterize the active dopant concentration of doped GaAs layers containing hydrogen, we have used secondary ion mass spectroscopy and cross-sectional scanning tunneling microscopy. Spectroscopic measurements are performed as well as conductance images to visualize the variation of the conduction band-edge position. Such a variation, which is related to the concentration of Si–H complexes, allows the determination of the doping profile. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1418457
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Formation of silicon islands on a silicon on insulator substrate upon thermal annealing (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3271-3273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Starting from silicon on insulator substrates, we show that a thermal treatment (in the 600–900 °C range) induces the creation of silicon islands. To characterize the island formation as well as the initial silicon layer thickness, we use in situ Auger electron spectroscopy analysis in an ultrahigh vacuum chamber. The island size and density are studied with an ex situ atomic force microscope. We show that the formation temperature of the islands increases from 575 to 875 °C as the initial silicon layer thickness increases from 1 to 19 nm. For the 1 nm thickness, the minimum island size is reached (semispherical shape with a 16 nm diameter). The phenomena involved in the island formation are discussed and the study of the variations of the calculated stress tensor (IMPACT software) as a function of the thermal treatment explain the behavior of the top silicon layer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126603
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Atomic-scale study of GaMnAs/GaAs layers (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 4001-4003 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cross-sectional scanning tunneling microscopy was used to study GaMnAs diluted magnetic semiconductors grown by low temperature molecular beam epitaxy. The Ga1−xMnxAs layer, containing a concentration of x=0.005, shows that the dominant defect in the material is the arsenic antisite. Mn ions can also be resolved and show a signature distinct from the arsenic antisites. Spectroscopic measurements are perfomed to study the variation of the Fermi level between the Ga0.995Mn0.005As and GaAs layers. The Mn ions act as acceptor dopants. However, for x=0.005, the Mn concentration in comparison with the As antisite concentration is too small to induce a significant change of the Fermi level from the midgap position, preventing the layer from being ferromagnetic. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1322052
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Quantum box size effect on vertical self-alignment studied using cross-sectional scanning tunneling microscopy (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2608-2610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: InAs quantum boxes separated by GaAs spacer layers are known to exhibit a vertical self-organization along the growth direction. The alignment probability between two sets of quantum boxes depends strongly on the spacer layer thickness Zs. In this letter, we study samples containing multiple arrays of quantum boxes separated by GaAs spacer layers of various thicknesses, using cross-sectional scanning tunneling microscopy. This work experimentally evidences that the spacer layer characteristic thickness Zs0 below which a vertical self-alignment occurs, depends on the size of the quantum boxes. These results are interpreted using a theoretical two-dimensional model. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123912
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Microscopic behavior of silicon in silicon delta-doped layer in GaAs (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2454-2456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon δ-doped layers in GaAs have been studied using scanning tunneling microscopy and scanning tunneling spectroscopy on cleaved (110) surfaces. The samples were grown using molecular beam epitaxy with two growth temperatures: 480 and 580 °C. The concentration of the δ-doped layer was 0.03 monolayer. We show that, as in the case of bulk doping, the silicon has an amphoteric character: both SiGa and SiAs are observed at 480 °C and donors are formed before acceptors. At 580 °C, the spatial repartition of silicon evidences the segregation of silicon. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121380
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...