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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 54 (1992), S. 470-473 
    ISSN: 1432-0630
    Keywords: 71.70 ; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The emission spectrum of Cr3+ in Y3Ga5O12 crystalline thin films at 10K is composed of the sharp R 1-line, its phonon sideband, and the very weak broadband. The lineshape of R 1-line at the peak wavelength of 689.8 nm cannot be fitted to a single Gaussian. This suggests that there exist several different Cr3+ sites in the thin film. This fact is confirmed by lifetime measurements; the radiative decay of the fluorescence is decomposed into multiple-exponential curves. The dominant component (2.8 ms) of the decay curve for the broadband emission is equal to those (2.4 ms) for R 1-line and its phonon sidebands. This result is discussed in terms of a tunneling model.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 323-326 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Time-resolved luminescence of transiently excited porous silicon reveals the dynamics of the excitation-luminescence cycle in which localized excitons efficiently generate orange-red luminescence from this material at room temperature. Upon transient excitation with nanosecond pulses, both blue and orange luminescence bands appear coincidently. At long time delays, the orange luminescence dominates. We show here that the time-delayed orange luminescence is thermally activated by hopping-related processes. The activation energy for a 500 ns delay is 36 meV. Our observations are in principle capable of resolving outstanding contradictions in the porous silicon luminescence literature. Quantum confinement on a wire fluctuating width provides the strong energy disorder which facilitates exciton localization. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3273-3275 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter we discuss the potential and the limitations of quantitative characterization of the distribution of In and Ga atoms in III–N mixed alloys using energy dispersive x-ray (EDX) analysis. Spatial fluctuations of the indium content in an InGaN epilayer are found to correspond to changes in luminescence efficiency. Large hexagonal pyramids, which appear sparsely in such layers, appear to be relatively deficient in indium. Monte Carlo simulations, used to profile the Ga Ka x-ray fluorescence, highlight several limitations of the EDX technique in this context, but confirm our interpretation of the data. Finally, we identify differential growth rates as a possible explanation for the concentration/efficiency variations in InGaN layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 263-265 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a comparative study of the emission and absorption spectra of a range of commercial InGaN light-emitting diodes and high-quality epilayers. A working definition of the form of the absorption edge for alloys is proposed, which allows a unique definition of the Stokes' shift. A linear dependence of the Stokes' shift on the emission peak energy is then demonstrated for InGaN using experimental spectra of both diode and epilayer samples, supplemented by data from the literature. In addition, the broadening of the absorption edge is shown to increase as the emission peak energy decreases. These results are discussed in terms of the localization of excitons at highly indium-rich quantum dots within a phase-segregated alloy. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3197-3197 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1455-1457 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Simple II–VI laser cavities were formed by cleaving epitaxial ZnSe samples containing a single CdSe quantum well of mean thickness about 1 monolayer. Time-integrated stimulated emission spectra of these lasers show little evidence of mode structure. A video camera enables temporal resolution of the stimulated emission spectra. Mode structure appears on the time-resolved spectra. In addition, however, video spectroscopy reveals spatial variations of wavelength and intensity in the laser output which are not well understood. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2765-2765 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 1843-1845 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comparative study of the optical linewidths of photo- and electroluminescence from high-quality InGaN epilayers and commercial single quantum well light emitting diode structures was undertaken. Optical linewidths in both cases are temperature insensitive and increase systematically with increasing indium concentration. We assess the contribution of three mechanisms to the luminescence linewidth: alloy fluctuations, well width fluctuations, and strain effects. It is found that the broadening of the emission line is an intrinsic property of InGaN alloys. The piezoelectric effect in wurtzite semiconductor is proposed as a novel line-broadening mechanism. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 671-673 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The operation of the intrinsic Stark effect at visible wavelengths is reported, for both cubic and wurtzite type-II CdS–ZnSe strained layer superlattices grown on CdS buffer layers on (111)A GaAs. An observed increase of the effective piezoelectric coefficient from the measured cubic bulk value is attributed to a nonlinear effect, as previously reported for CdTe quantum wells [R. André, J. Cibert, Le Si Dang, J. Zeman, and M. Zigone, Phys. Rev. B 53, 6951 (1996)]. Exciton peak shifts of 70 meV per decade change of excitation intensity are similar in magnitude to those found in CdS–CdSe superlattices of similar period. These shifts are attributed to screening of the internal piezoelectric fields by photoexcited carriers. Exciton peak shifts that are smaller by an order of magnitude appear in CdS–ZnSe samples, grown on (100) ZnSe buffers and therefore predicted to exhibit no piezoelectric effects of any order. These small shifts, which we attribute to space charge buildup, are a characteristic feature of type-II superlattices. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 355-357 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN thin films were grown by molecular beam epitaxy on sapphire substrates. Scanning electron (SE) and atomic force microscopies reveal that on a typical film an assembly of oriented hexagonal microcrystallites rises above a background of polycrystalline or amorphous material. Cathodoluminescence (CL) spectra of the films feature bright UV exciton peaks and a broad green emission band. We identify the exciton peaks as those of the wurtzite form of GaN. A comparison of SE and CL micrographs of the same sample area shows that the luminescence emanates almost entirely from the hexagonal crystallites. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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