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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3714-3718 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scanning electron microscope mirror image method is developed to measure the charge distribution volume in insulators. An electrostatic potential expression is derived by assuming the dipolar approximation and hemispheroid distribution. Dielectric samples with different relative permittivities are employed in charging experiments to justify our approach. The proposed method is employed to measure the radius of the charge distribution volume in polymethylmethacrylate samples irradiated by electron beams with energy ranging from 25 to 39 keV. Experimental results achieved are in good agreement with those obtained through the use of other experimental techniques and Monte Carlo simulation. The strength of the present method is in its ability to quantitatively give the total trapped charge and its distribution in the electron irradiated insulators in a single experiment. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1352-1354 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The scanning electron microscope copper-detector technique introduced most recently by H. Gong and C. K. Ong [J. Appl. Phys. 75, 449 (1994)] is employed for the investigation of charging on faces m {101¯0}, R {101¯1}, and χ {516¯1} of single-crystalline α-quartz. It is found that the charging ability decreases in the order of m, R, and χ, revealing the dependence of charging on crystallographic orientations, and these results are confirmed by the well-established mirror-image method. In addition, the experimental results also suggest that not only electron-irradiation-induced defects but also intrinsic defects are responsible for charge trapping.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7444-7447 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave dielectric measurements have been performed on various Zn-doped InP crystals using a vector network analyzer. There are two kinds of dielectric response in Zn-doped InP crystals depending on their Zn concentration. The general dielectric response in InP in the microwave frequency region is dielectric relaxation, which is related to the dipolar species formed from the ionized substitutional ZnIn−. The other dielectric response of InP crystals doped with a higher Zn concentration is dielectric loss. The crystal doped with Zn to a concentration of 2.14×1018 cm−3 shows a strong dielectric loss at 11 GHz, but no dielectric loss peaks are found in crystals doped with a lower Zn concentration of 4.36×1017 cm−3. The dipolar species, which gives rise to the dielectric loss in Zn-doped InP crystals, is believed to be a result of vacancy complex defects of neutral substitutional ZnIn and two P vacancies.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7123-7128 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present article, a convenient method for the direct measurement of the displacement current caused by electron trapping is developed to measure the trapped charge in insulators under electron beam irradiation from a scanning electron microscope. The trapping process during electron beam irradiation can be directly observed by this method. By using the conservation of current, a macroscopic formula is derived to describe our observation. The derived formula relates the measured current to the radiated beam energy, current, radiation-induced conductivity, and electron penetration depth of a sample. Experiments have been performed on polymethymethacrylate samples in which the samples are irradiated with electron beams of fixed beam energy as well as fixed beam current. The results are as predicted in theory. An agate sample is found to be unable to trap charge due to the small electron penetration depth and large radiation-induced conductivity of the sample. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8219-8221 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dielectric properties of a fluorozirconate glass are investigated in the frequency range from 0.5 to 13.5 GHz using a microwave vector network analyzer. A prominent dielectric resonance is observed around 7.0 GHz. The resonance may be due to a fundamental interunit vibrational mode of the basic structural ZrFn polyhedral units of the fluorozirconate glass.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2414-2418 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Different densities of conjugated bonds, which affect the polarization states necessary in forming polarons, are generated by stretching polymers at various rates. An investigation of the charging of the stretched high-impact polystyrene and high-density polyethylene by using a scanning electron microscope technique is made. The experimental results reveal that polymer charging is related to electron trapping as polarons at the polarized sites of the polymeric chains, confirming the recent interpretation of charging behavior in insulating materials.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 806-809 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A scanning electron microscope (SEM) is employed to study the charging phenomenon of polymethylmethacrylate using the mirror image method. Classical scattering theory is modified to calculate the total trapped charge Q. This theory has also been used to justify the use of a fitting procedure to calculate Q. The fitting procedure is more feasible for a SEM which does not have low accelerating voltage facility. Results from both methods are compared. Details of derivation are given.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 5532-5534 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The underlying mechanism of coercivity in permanent magnets has been a topic of intense interest for many years. It is motivated by the fact that the measured coercivity approaches only 20%–40% of the theoretical nucleation fields as derived from micromagnetic theory. We address this problem by proposing an analytical model, within the framework of the micromagnetic approximation, to examine the mechanism of magnetization reversal in hard magnetic materials. The exchange interaction between neighboring grains with different easy axes orientations can result in the formation of a domain wall-like magnetization structure (transition region) in the grain boundary. We propose that the transition region can propagate between neighboring grains provided that it is energetically favorable. The subsequent nucleation of a domain wall is shown to reduce the critical field considerably. Applying our model to a thin film, whose magnetic grains have a randomly oriented in-plane easy axis distribution, we have calculated the coercivity for the film to be 0.14HK, where HK is the anisotropy field. It is found that the coercivity decreases with increasing film thickness. For a material with a three-dimensional random easy axis distribution, we obtain the coercivity as 0.16HK. These results are substantially lower than that given by the Stoner-Wohlfarth model and are consistent with available experimental results. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 789-793 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have performed magnetic and transport measurements on a series of Nd0.67Sr0.33Mn1−xFexO3 polycrystalline compounds with x=0.0, 0.05, 0.10, and 0.15. For the Fe-undoped Nd0.67Sr0.33MnO3 (NSMO) materials, a magnetoresistance (MR) as high as ∼33% was observed at the metal–insulator transition temperature, Tp=273 K, in a magnetic field of 10 kOe. Fe substitution in Mn sites leads to a reduction in Tp and an increase in the overall MR. A 10% Fe contribution increases the MR up to about 65% and lowers Tp to 88 K. The calculated magnetic moment at 5 K and an applied field at 9 T for the parent NSMO is 4.21 μB and decreases continuously with an increasing amount of iron added. It was found that with the same amount of Fe doping, the Curie temperature, TC, decreases much faster in the Nd-based system than in the corresponding La-based system. The enhanced colossal magnetoresistance and the suppression of ferromagnetism observed in this compound can be interpreted as due to the weakening of the double exchange mechanism by Fe3+ ions, which causes the localization of the hopping electrons. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4497-4502 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology and microstructure of laser-ablated Pb(Zr0.52Ti0.48)O3 (PZT) films on a (100) SrTiO3 (STO) substrate at early growth stage are characterized by means of atomic-force microscope, x-ray diffraction, and high-resolution transmission electron microscopy analysis. The (100) STO surface is found to be very favorable for epitaxial growth of (001) PZT films, which undergo a three-dimensional island growth mode. We observed a two-layer structure at the film thickness around 40–50 nm when small nuclei/grains merge into large grains. With further increase of film thickness, a column-like growth mode dominates the film crystalline structure, which results in an almost independent in-plain grain size of 100–150 nm with increasing film thickness and a limited film roughness. A very sharp interface between the PZT thin film and STO substrate is observed. The PZT film shows a perfect stacking lattice at a thickness of around 20 nm and above, indicating that the misalignment due to the interface stress and defects is healed after stacking about 50 ML of the film. These results have shed some light on the growth mechanism of epitaxial PZT film on YBCO or other bottom layers for microelectromechanical systems application. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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