ISSN:
1662-9779
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Physics
Notes:
TiO2 thin films were prepared by spray pyrolysis method. The solution containingtitanium(IV)isopropoxide, acetylacetone and ethanol was deposited onto n-type Si(100) and HD Si(100) wafers at substrate temperatures of 315 to 500 0C by pulsed spray solution feed. The films were characterized by FTIR, XRD, AFM, ellipsometry, impedance and I-V measurements. Asdeposited films prepared below 500 0C were amorphous, whereas crystalline films could be achieved at 500 0C. Subsequent annealing at 700 °C in air led to crystalline anatase formation for films deposited below 400 °C. Rutile phase appears in annealed films prepared at a growth temperature above 400 °C. Anatase TiO2 films show refractive index in the range 2.20 to 2.40 and exhibit a relative dielectric constant value of 75 in the range 1 to 100 kHz. Electric breakdown occurs for 120 nm thick film at 250 kV/cm
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/26/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.99-100.259.pdf
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