ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This study aims to clarify the interaction between Si wafer and individual diamondabrasives in grinding at nanometer level and to estimate the grinding conditions for minimizing thesurface defect. This paper reports on the results obtained through nano-scratching experiments invacuum by an atomic force microscope (AFM) and simulations by using the molecular dynamicsmethod by applying Tersoff potential for Si-Si atomic interaction under room and high temperature,respectively, to examine the influence of the grinding heat on the materials removal process. As aresult, it was proven that the scratch groove under high temperature becomes deeper than that underroom temperature from the experiments, and it was also observed that the formation of the amorphousphase around the scratch groove under high temperature becomes a little bit larger than that underroom temperature from the simulations
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/52/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.329.379.pdf
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