ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
We have investigated the influence of in-situ H2 etching on the surface morphology of the4H-SiC substrate prior to homoepitaxial growth. In this study, we varied the types of gas atmosphereduring in-situ H2 etching; namely, hydrogen (H2) alone, hydrogen-propane (H2+C3H8), andhydrogen-silane (H2+SiH4). We found that in-situ H2 etching using H2 + SiH4 significantly improvedthe surface morphology of 4H-SiC substrate just after in-situ H2 etching. By adding SiH4, formationof bunched step structure during in-situ H2 etching could be significantly suppressed. In addition, H2etching using H2 + SiH4 was able to remove scratches by etching a thinner layer than that using H2alone. We also discussed the in-situ H2 etching mechanism under the additional SiH4 condition
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/17/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.556-557.85.pdf
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