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  • 1
    Electronic Resource
    Electronic Resource
    Giant negative magnetoresistance in a nonmagnetic semiconductor (1999)
    Springer
    JETP letters 69 (1999), S. 386-391 
    Details
    ISSN: 1090-6487
    Keywords: 75.30.Vn ; 72.20.My
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Studies of a classical III–V semiconductor (InSb) doped with 3d magnetic ions (Mn2+, having a localized spin S=55/2) reveal some unexpected transport properties. It is found that the transition from the metallic to the low-temperature insulator phase occurs at an impurity concentration N Mn∼N cr=2× 1017 cm−3 and a temperature T〈T cr∼1 K. Under these conditions a giant negative magnetoresistance arises. The experimental results can be explained in terms of the onset of a hard Mott-Hubbard gap Δ in the impurity band formed by the shallow manganese acceptor in InSb at N Mn∼N cr. A model describing the gap formation is proposed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.568039
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic-phase diagram of a Mn0.9Co0.1P single-crystal. Irreversible behavior in a magnetic field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5442-5444 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic-phase diagram of a Mn0.9Co0.1P single crystal was studied by ac susceptibility with a magnetic field (H) applied along its orthorhombic b axis. This system orders ferromagnetically at 197.5 K and below 37 K it shows a helimagnetic structure in H=0. The H-T phase diagram above 37 K is similar to the one found in pure MnP, including the presence of a Lifshitz multicritical point (HL =11.0 kOe, TL =99±1 K) at the confluence of the paramagnetic, ferromagnetic, and modulated fanlike phase. It was found that: (1) the hysteresis at the first-order transitions between the ordered phases is much larger than in MnP; (2) hysteretic behavior is observed inside the whole region of the phase diagram corresponding to the fanlike phase; (3) the second-order fan-para transition fades at low temperatures and an irreversible behavior is observed with the irreversibility field sharply increasing at lower temperatures. The last feature is in marked contrast with what is observed in pure MnP, where the second-order fan-para transition is very sharp and the transition field tends to a constant value at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345837
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  • 3
    Electronic Resource
    Electronic Resource
    Evidence of the existence of a line of multicritical Lifshitz points in the phase diagram of manganese phosphide (abstract) : 35th annual conference on magnetism and magnetic materials (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 5815-5815 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimentally pure Lifshitz critical behavior has only been reported in the orthorhombic magnetic system MnP which exhibits uniaxial Ising-type Lifshitz points LP (d=3, n=1, m=1). Two LPs have been previously identified in MnP.1,2 One when the external magnetic field H was applied along the intermediate b axis, the other when H was along the hard anisotropy axis a. Both LPs occur roughly at the same temperature (T1∼121 K) but at different values of H due to the difference in anisotropy. In this work we report on measurements made with H applied within the ab plane. The observed phase diagram obtained using an ac susceptibility technique shows, near the confluence of the modulated and ferromagnetic phases with the paramagnetic phase the same characteristics of the phase boundaries found for H along a and b. The temperature at the multicritical point is ∼121 K. A preliminary analysis of the crossover exponent φ, obtained from the shape of the phase boundaries give φ(approximately-equal-to)0.6, a value that is consistent with that found for H along the a and the b axes. These data suggest that there is a line of LPs connecting the multicritical points found when H is along the b and a axes.〈ks〉
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347888
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  • 4
    Electronic Resource
    Electronic Resource
    Distant-neighbor exchange constants in Mn-based dilute magnetic semiconductors (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5950-5952 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Individual exchange constants Ji between distant neighbors in Zn1−xMnxX (X=S, Se, Te) were obtained from magnetization steps at 20 mK. The results disagree with all predictions. The principles involved in this experimental work and its analysis are reviewed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370001
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  • 5
    Electronic Resource
    Electronic Resource
    On the ferro-cone-fan magnetic transitions in MnP (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 3092-3094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By measurements of ac susceptibility we have studied the phase boundaries on MnP in the vicinity of the point where the ferromagnetic, the cone, and the fan phases meet. The present data are consistent with the assignment of second order to the cone-fan transition line. This line, then, ends at a critical end point on the ferromagnetic boundary.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340878
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