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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1871-1873 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of changing the length of the spacer layer between two vertically integrated resonant tunneling diodes (RTDs) is experimentally determined. Three different wafers, each containing two RTDs, were grown by molecular beam epitaxy, with spacer layers of 1200, 700, and 200 A(ring), respectively. A fourth wafer with a single such RTD was grown as a control sample. Two of the control samples wired in series show two current peaks, the temperature dependence of the current-voltage (I-V) curves being correctly predicted by a nonlinear load model. The I-V characteristics of the stacked devices with 1200 and 700 A(ring) quantum wells between the RTDs also show two current peaks, confirming that the bulk of electrons lose longitudinal wave function coherence between the two double-barrier structures. The first derivative of the I-V curve for the samples with 700 and 1200 A(ring) spacers displays evidence of quantum interference between the cathode well and the central spacer as a second-order effect. The first major peak in the structure with a 200 A(ring) spacer between the quantum wells differs from the first peak in the other structures, and the difference is attributed to quantum interference effects.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 201-203 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of impurities placed in the wells of double-barrier resonant tunneling diodes on the current-voltage characteristics was experimentally determined. Four different double-barrier structures were grown by molecular beam epitaxy with n-type, p-type, undoped, and highly compensated doping in the center of the well. Resonant tunneling devices of various sizes were fabricated, and measured at 77 K. Systematic shifts in the peak position and peak to valley ratios were observed for the different dopant profiles. The shifts in peak position are correctly predicted by a ballistic model which includes the effects of band bending due to ionized impurities in the well. The doped devices showed a systematic decrease in the peak to valley ratio which is not predicted by the ballistic model. By scaling our results, it is apparent that in most cases unintentional background impurities are not sufficient to significantly degrade the current-voltage characteristics of resonant tunneling diodes.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7141-7148 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of high current density and doping concentration on the current-voltage (I-V) characteristics of vertically integrated resonant tunneling diodes (VIRTDs) is experimentally determined. Room-temperature peak current densities as high as 2.7×104 A/cm2 and first and second peak-to-valley ratios of 3.6 and 2, respectively, are achieved in VIRTDs with 6-monolayer (ML) (17 A(ring)) barrier RTDs and 600 A(ring) separation between them. Symptoms of degradation in the I-V characteristics of these devices, which are attributed to insufficient longitudinal momentum relaxation in the region between RTDs, turn into a serious problem when the separation between RTDs is decreased to 500 A(ring). Through the variation of doping in the separation region, higher doping (3×1018 cm−3) between RTDs is proposed to remedy this problem and demonstrated to be quite effective in restoring the I-V characteristics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 3345-3350 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A coherent transport model is described which accommodates bandstructure nonparabolicity by using a "local energy parabolic band approximation.'' The model and a knowledge of its limitations is used to design resonant tunneling diodes in the GaAs/AlAs material system with measured peak current densities of 2.5(2.8)×105 A cm−2 concurrent with peak-to-valley ratios as high as 1.8 (3.1) at room temperature (77 K).
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3812-3814 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and implement a promising fabrication technology for geometrically well-defined single-electron transistors based on a silicon-on-insulator quantum wire and side-wall depletion gates. The 30-nm-wide silicon quantum wire is defined by a combination of conventional photolithography and process technology, called a side-wall patterning method, and depletion gates for two tunnel junctions are formed by the doped polycrystalline silicon sidewall. The good uniformity of the wire suppresses unexpected potential barriers. The fabricated device shows clear single-electron tunneling phenomena by an electrostatically defined single island at liquid nitrogen temperature and insensitivity of the Coulomb oscillation period to gate bias conditions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a systematic study of the ballistic electron contribution to the current-voltage (I-V) characteristics of vertically integrated resonant tunneling diodes (RTDs) separated by doped spacer layers (Wsp). A magnetic field (B) transverse to the tunneling direction was used to tune the electron's longitudinal energy. The results confirm the isolated circuit element picture of the Wsp=1000 A(ring) sample and the strongly coupled description of the 0 A(ring) sample. This work shows that even for some nominally isolated RTDs (in this work for Wsp= 400 and 500 A(ring)), the I-V characteristics can undergo striking B-induced changes. This effect is due to resonant charge buildup in the well of the collector RTD from the relatively weak ballistic component of the current traversing the doped spacer region. A simple model that includes a calculation of the conduction-band profile and quantum well energy levels under bias gives good agreement with the data.
    Type of Medium: Electronic Resource
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  • 7
    ISSN: 0178-515X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract  Periodic backflushing of tubular ceramic membrane filters with filtrate was employed to alleviate membrane fouling in a bioreactor with internal-filtration. As the model system, yeast fermentation was dealt with in this study. There existed optimum backflushing interval and time to give a maximum flux recovery. At 16 g/l of yeast cell concentration, the mean flux increased about 2.5 times by using such repeated operation cycles as consisted of 4.53 minutes for filtration, 4.5 seconds for intermission, and 40 seconds for backflushing. Effects of aeration, agitation speed, and yeast cell concentration were also investigated.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    International journal of fracture 64 (1993), S. R13 
    ISSN: 1573-2673
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 0178-515X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract Filtration of ethanol fermentation medium and broth by using symmetric and asymmetric ceramic membranes has been studied in an internal filter bioreactor. Factors studied included membrane structure and pore size, medium sterilization, and concentrations of glucose, yeast extract in the medium, yeast cell and protein in broth. The aim was to determine the main factors responsible for the decline in filtration performance during ethanol fermentation by Saccharomyces cerevisiae. Flux index (Fi) of a new concept has been developed to evaluate the degree of flux decline during the membrane fouling process. Fi was defined as the ratio of the membrane flux at certain filtration time (t = t) to the initial (t = −0) flux of pure water, not the initial (t = +0) flux of the test fluid. Flux with sterilized medium was approximately two-fold higher than that with unsterilized medium although the reason could not be explained clearly. Glucose, interaction between glucose and yeast extract, yeast cells, and proteins in fermentation broth were found to play an important part in membrane fouling. Fi of the symmetric membrane decreased to a less extent than that of the asymmetric membrane with increasing glucose concentration. But, the result with various yeast cell concentrations turned out to be contrary. Fouling was more serious for asymmetric membrane during the filtration of fermentation supernatant. This was thought to be due to different fouling mechanisms for the two types of membrane.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 0178-515X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract An internal membrane-filtration bioreactor system with periodic fouling removal and on-line cell measurement was employed for long-term continuous ethanol production from glucose in order to prove its performance and practicality. The bioreactor system developed in this study was successfully operated for 2 months with no problems in the maintenance of filtration flux. The maximum productivity obtained in this study was about 13 g/l-h which was ca. 3.3 times higher than that obtained in a conventional chemostat without cell retention by membrane. In another run of continuous culture, the laser turbidimeter used for the on-line monitoring of cell concentration showed a stable performance for 45 days without sensitivity loss due to fouling.
    Type of Medium: Electronic Resource
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