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  • 1
    Electronic Resource
    Electronic Resource
    Reaction Rate as an Effective Tool for Analysis of Chemical Diffusion in Solids (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 139 (Apr. 2008), p. 123-128 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: In their paper, R. Merkle et al [R. Merkle, J. Maier, K.D. Becker and M. Kreye, Phys.Chem. Chem. Phys. 6, 3633 (2004)] conducted an experimental study on the chemical diffusion ofoxygen in Fe-doped SrTiO3 single crystals driven by large changes in the oxygen ambient partialpressure. The stoichiometry dependence of the chemical diffusion coefficient was derived on thebasis of the concept of conservative ensembles for two independent trapping reactions, which thenserved for calculating the evolution of vacancy profiles. The theoretical predictions were comparedto the experimental results. In the framework of the same model, in the present communication, thechemical diffusion of oxygen was analyzed by the concept of a dynamic reaction front [M. Sinder,J. Pelleg, Phys. Rev. E 61, 4935 (2000); Z. Koza, Phys. Rev. E 66, 011103 (2002)]. We show, thatby using a quasi-chemical reaction rate profile, it is possible to obtain information relating to theposition and width of the zone where the reaction takes place. It is indicated, that the reaction ratedistribution can be directly calculated from measured concentration profiles of the immobilereactant
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.139.123.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Diffusion of P in a novel three-dimensional device based on Si–TaSi2 eutectic (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 699-706 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion of P in Si–TaSi2 eutectic and silicon single crystal specimens was investigated at a concentration of about 1019 atoms cm−3 in the temperature range of 767–1227 °C. No definite distinction can be made between diffusion of P in the eutectic structure and in silicon. A nonlinear Arrhenius plot was obtained, indicating a P diffusion enhancement at the lower temperature range. From the linear portion of the Arrhenius line drawn through all the experimental points, an activation energy and pre-exponential factor of 3.75 eV and 5.7 cm2 s−1 were derived, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353325
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  • 3
    Electronic Resource
    Electronic Resource
    Silicide formation in the Ta/Ti/Si system by reaction of codeposited Ta and Ti with Si (100) and Si (111) substrates (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 1531-1539 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Codeposited Ta and Ti on Si (111) and Si (100) substrates were investigated at 1023, 1123, and 1223 K by x-ray diffraction and sheet resistance measurements. Rapid thermal annealing at 1223 K resulted in a complete solid solution of (Ti,Ta)Si2. A tendency for its formation was also observed at the lower temperatures of 1023 and 1123 K on Si (111) during the time interval up to 200–300 s used in this work. Complete solid solution is expected to form at sufficiently high temperatures when annealing time is long enough. The reaction rate of (Ti,Ta)Si2 formation on Si (100) is appreciably lower than on Si (111). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369283
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  • 4
    Electronic Resource
    Electronic Resource
    Erratum: "Silicide formation in the Ta/Ti/Si system by reaction of codeposited Ta and Ti with Si (100) and Si (111) substrates" [J. Appl. Phys. 85, 1531 (1999)] (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1587-1587 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372059
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  • 5
    Electronic Resource
    Electronic Resource
    Diffusion barrier properties of amorphous TiB2 for application in Cu metallization (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 6099-6104 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous TiB2 films were obtained by magnetron cosputtering and conditions for obtaining good diffusion barrier properties against penetration by Cu were evaluated by Auger electron spectroscopy. Controlling the B/Ti ratio is of major importance. It was found that the best diffusion barrier properties were obtained in stoichiometric or overly stoichiometric titanium boride. Almost no penetration of Cu occurred at 953 K for 30 min. Films of TiBx where x〈2.0 are of inferior barrier quality. At B/Ti(approximate)1.63 complete deterioration of the barrier property occurs. The effect of composition is explained in terms of the packing density of the amorphous film. Preliminary diffusion studies by secondary ion mass spectroscopy in the amorphous titanium boride of near-stoichiometric composition (B/Ti(approximate)2.07) indicate that two mechanisms seem to operate in the TiB2 film. The low temperature mechanism occurs in the amorphous disordered structure, whereas at higher temperature diffusion occurs in an amorphous film in which short-range order exists. An activation energy of (approximate)2.0 eV was derived from the steep slope of the Arrhenius curve that represents diffusion in the short-range ordered region. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1468904
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