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  • 1
    Electronic Resource
    Electronic Resource
    Dopant redistribution during the solid-phase growth of CrSi2 on Si(100) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4187-4193 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of an investigation into the redistribution of dopants—As, B, and P—during the solid-phase reaction of Cr with Si substrates to form CrSi2 are presented. Cr layers, 47 nm thick, were evaporated onto B-doped Si substrates which had previously been implanted with one of the three dopants. Two implant doses were investigated for each dopant. Following heat treatment at 500 °C, doping profiles were determined by secondary-ion mass spectrometery (SIMS) and, for arsenic-doped samples, by Rutherford backscattering spectroscopy (RBS). Both SIMS and RBS were also used to measure the extent of silicide formation. The results demonstrate that B and P are transported from the Si substrate to the surface of the growing CrSi2 layer while As accumulates at the CrSi2/Si interface. The silicide formation reaction is shown to be inhibited by large As concentrations. No other dopant-concentration-related effects were observed. A model, based on dopant segregation driven by the relative free energies of CrSi2 and Cr-dopant compounds, is proposed to explain the results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341333
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  • 2
    Electronic Resource
    Electronic Resource
    Fluorine redistribution in a chemical vapor deposited tungsten/polycrystalline silicon gate structure during heat treatment (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3229-3232 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fluorine redistribution during heat treatment of chemical vapor deposited tungsten/polycrystalline silicon gate structures was analyzed by the nuclear resonance broadening technique. The tungsten layer was deposited from a hydrogen/tungsten hexafluoride gas mixture. Upon heat treatment in the temperature range 1020–1325-K tungsten disilicide formation was observed using Rutherford backscattering spectrometry. In the as-deposited sample, the fluorine was accumulated at the tungsten/polycrystalline silicon interface. After silicide formation the fluorine was observed at the tungsten disilicide/polycrystalline silicon interface. At temperatures above 1120 K fluorine starts to diffuse through the polycrystalline silicon layer. A variation in the total fluorine content between the samples was also observed. The origin of the fluorine redistribution as well as the variation in the total fluorine content is discussed in connection to conceivable mechanisms.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341541
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  • 3
    Electronic Resource
    Electronic Resource
    Fabrication and properties of metal/ferroelectrics/semiconductor diodes on 4H–SiC (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1532-1534 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polycrystalline PbTiO3 (PTO) films with pure perovskite phase were deposited directly on 4H n-type SiC substrates by pulsed laser ablation. By subsequent gold metallization, metal/ferroelectrics/semiconductor (MFS) diodes were fabricated. At room temperature the leakage current exhibits ohmic behavior at low voltages (〈3 V), but at higher voltages (≥6 V), it is Schottky emission dominated. Both the dielectric constant and the resistivity of the PTO layers are frequency dependent, decreasing monotonically with the increasing frequency. The capacitance–voltage (C–V) curves of the diodes demonstrate the typical hysteresis loop of a MFS diode structure, and carrier injection and memory effects are observed in the C–V measurements. The investigated MFS diode structure has tentative applications as a gate structure in a SiC field effect transistor or a nonvolatile memory cell on a SiC substrate. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122196
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  • 4
    Electronic Resource
    Electronic Resource
    Strain characterization of CoSi2/n-Si0.9Ge0.1/p-Si heterostructures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 440-442 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the structural characterization of CoSi2/n-Si0.9Ge0.1/p-Si heterostructures. Silicon molecular beam epitaxy is combined with Co sputtering to obtain these structures. The strain in the Si1−xGex is investigated after the formation of the CoSi2 by using high-resolution x-ray diffraction mapping in reciprocal space and cross-sectional transmission electron microscopy. The results show that in order to keep the strain in Si1−xGex unaffected, a sacrificial Si layer is needed. It was possible to obtain transistor action, but with low-current gain (β).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111122
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  • 5
    Electronic Resource
    Electronic Resource
    On the formation of inhomogeneities in epitaxial CoSi2 layers grown from the interaction of Co/Ti bilayers with Si 〈100〉 substrates (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 762-768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The redistribution of titanium during the formation of epitaxial CoSi2, grown from the reaction of Co(20 nm)/Ti(10 nm) bilayers with Si 〈100〉, has been investigated. Annealing of Co/Ti/Si structures, at temperatures between 850 and 1050 °C, is shown to be associated with the growth of an inhomogeneous CoSi2 layer having Ti-rich surface layer(s) on top. The formation of inhomogeneities in the CoSi2 layer is conclusively attributed to the presence of Ti-rich surface layer(s). It is shown that smooth and morphologically stable CoSi2 layers can be grown by removing these surface layers followed by a high-temperature treatment in nitrogen atmosphere. We propose that the underlying mechanism for the inhomogeneity formation within the CoSi2 layer is a nucleation-controlled process, induced by an anticipated reaction between the CoSi2 layer and Ti-rich phases near the surface. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362884
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  • 6
    Electronic Resource
    Electronic Resource
    Electrical and mechanical characterization of chemical vapor deposition of tungsten on sputter-deposited TiN layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 7313-7322 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten (W) films are deposited from tungsten hexafluoride on sputter-deposited TiN adhesion layers in a cold-wall chemical vapor deposition reactor. The film resistivity of the W films is found to be thickness dependent. It decreases monotonically with increasing film thickness. Typical resistivity values of 40-nm-thick W films are about 19.3–23.4 μΩ cm, depending on the structure of the underlying TiN layer used. The resistivity of a 980-nm-thick W film is 9.8 μΩ cm. Oxygen and fluorine impurities, as well as structural difference in the W films are found to be the major causes for the resistivity variations. Lowering impurity level and/or increasing W crystallite size can decrease film resistivity. The stress of all the W films is found to be tensile, independent of the structure of the TiN layers. However, the absolute value of the stress is intimately associated with the structure of the TiN layers. The stress values can differ by a factor of more than 2 for the 40-nm-thick W films deposited on the different underlying TiN layers. The amplitude of stress also monotonically decreases with increasing film thickness. Consequently, the difference in stress induced by the difference in the underlying TiN layers gradually disappears as the film thickness increases. A strong correlation between the stress and the film texture is found. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360379
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  • 7
    Electronic Resource
    Electronic Resource
    Removal of the process-induced fluorine associated to chemical vapor deposition of tungsten onto a polycrystalline silicon gate structure by heat treatment in a hydrogen-containing atmosphere (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 2112-2120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tungsten was deposited from a gas mixture of hydrogen and tungsten hexafluoride onto a polycrystalline silicon gate structure in a chemical vapor deposition system. During the deposition process fluorine was also deposited as an undesired impurity. In order to remove the fluorine, heat treatments in the temperature range 550–1050 °C were performed in a hydrogen atmosphere. By this treatment it is possible to form volatile hydrofluoric acid and hence remove fluorine from the structure. Nuclear-resonance-broadening technique and secondary ion mass spectrometry were used for the analysis of fluorine. Fluorine was detected in all the samples except for the sample heat treated at 1050 °C. Moreover, etching of the polycrystalline silicon was observed. The gettering of fluorine, the etching of silicon and the observed formation of tungsten disilicide at 650 °C are discussed with respect to conceivable mechanisms. A thermodynamic study supporting the interpretations is also included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346566
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  • 8
    Electronic Resource
    Electronic Resource
    A quantitative study of oxygen behavior during CrSi2 and TiSi2 formation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 567-574 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Oxygen behavior during the formation of CrSi2 and TiSi2 was studied using 16O(α,α)16O resonant scattering and mass dispersive recoil detection analysis. The Ti and Cr films were deposited by e-beam evaporation in a cryopumped system. The oxygen content in the films was varied by evaporating at different pressures. The silicide films were formed by solid-solid reaction of the metal layers with the silicon substrate, and the annealing conditions were such that both partly and fully reacted silicides were obtained. The extent of the silicide formation was monitored by backscattering spectrometry. In the case of CrSi2, oxygen was found to be uniformly distributed throughout the silicide layer after annealing. For the Ti/TiSi2 system, however, oxygen seems to have preferentially remained in the Ti layer during the silicide growth, and its final distribution was confined in a region in the silicide close to the surface. It was also observed in the latter case that silicon diffused to the surface at the initial stage of annealing. A model based on the Nernst–Einstein equation is proposed to provide a general explanation for the oxygen behavior in metal/silicon systems. In addition, it was shown that oxygen which was initially in the form of metal oxides and in solid solution had been transformed into SiO2 after the silicide formation. Oxygen loss is observed for all samples, and increases with the extent of annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343143
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  • 9
    Electronic Resource
    Electronic Resource
    Isotope separation and growth mechanisms of intermetallic phases: An investigation of nickel silicides by secondary ion mass spectrometry (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 2390-2395 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Isotope separation resulting from the diffusion-controlled growth of reacted films has been proposed as a tool to elucidate the diffusion mechanism which controls the growth. A "reverse'' isotope separation would be indicative of a grain boundary diffusion mechanism. Such an isotope separation has been studied by secondary ion mass spectrometry (SIMS) during the growth of nickel silicides (Ni2Si and NiSi) for different experimental growth conditions: silicon substrate orientation, temperature of reaction, and silicide thickness. In every case, the isotope separation resulting from the diffusion-controlled growth is below the accuracy of the SIMS measurements. This is consistent with the fact that isotope effects are usually very small. The difficulties of such studies and the multiple SIMS artifacts encountered at interfaces—matrix effects, variations in the sputtering yield, mass interferences, and sequential acquisition of data—are analyzed in detail. They are found to be quite important in the case of nickel silicides and may lead to erroneous conclusions. A model for isotope separation during layer growth, which had been previously proposed, is shown to provide overoptimistic estimates of the magnitude of the anticipated effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345541
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  • 10
    Electronic Resource
    Electronic Resource
    Oxidation of silicon–germanium alloys. I. An experimental study (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5773-5778 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation of polycrystalline SixGe1−x films with different compositions (i.e., different values of x) is carried out in pyrogenic steam at 800 °C for various lengths of time. It is found that the oxidation is enhanced by the presence of germanium and that the enhancement effect is more pronounced for the films richer in germanium. A mixed oxide in the form of either (Si,Ge)O2 or SiO2–GeO2 is found at the sample surface if the initial SixGe1−x contains more than 50% of germanium. However, a surface silicon cap layer of about 14 nm is found to have a significant impact on the oxidation of the Si0.5Ge0.5 films; it leads to the growth of about 115-nm-thick SiO2 which is about four times that of the SiO2 resulting from the oxidation of the cap layer itself. On the SixGe1−x films with only 30% of germanium, the SiO2 continues to grow after oxidation for 180 min resulting in 233-nm-thick SiO2 which is about 2.4 times greater than the SiO2 grown on 〈100〉 silicon substrates. Rejection of germanium results in piling up of germanium at the interface between the growing SiO2 and the remaining SixGe1−x. Substantial interdiffusion of silicon and germanium takes place in the remaining SixGe1−x. The experimental results are discussed in terms of thermodynamics and kinetics. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366443
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