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  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of natural products 51 (1988), S. 969-970 
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 61 (1939), S. 1616-1617 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 1432-0568
    Keywords: Splenius muscle ; Muscle fiber types ; Primary afferents ; Spinal cord ; Brain stem ; Rat
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Summary The splenius muscle of the rat was investigated with regard to its structure and innervation. The latter was compared with that of the quadriceps muscle. The results can be summarized as follows: The splenius muscles of both sides form a bipennate muscle plate connecting the occipital bone with the spinous process of the second thoracic vertebra. The lateral parts of both muscles are attached directly to this prominent bony process, whereas the medial parts end in a median raphe which forms a tendinous cranial extension of the second thoracic vertebra. This tendinous extension, showing no connection to the cervical vertebrae, serves also for the attachment of acromio-trapezius muscle fibers. The lateral part of the splenius muscle is divided into two parts by a tendinous intersection. The splenius muscle consists mainly of fast twitch fibers: 55% were characterized as IIB and 40% as IIA fibers by histochemical demonstration of myosin ATPase-activity. A high content of muscle spindles — 57 spindles per gram of muscle tissue — was found. Comparing several aspects of the innervation of the splenius to that of the quadriceps muscle, the following results could be obtained: 1. The ratio of motor end plate size to muscle fiber volume is significantly higher in the splenius than in the quadriceps muscle. 2. As demonstrated by transganglionary HRP-transport, the main part of labeled splenius afferents to the spinal cord terminates in the central cervical nucleus. Quadriceps afferents, entering the lower thoracic and upper lumbar segments, mainly end in the area of Clarke's column. Several labeled fibers descend to the sixth lumbar and first sacral segments, where they terminate in the area of Stilling's nucleus. 3. A group of primary afferents from both muscles-most probably III- and IV-afferents — projects to the dorsal laminae of the dorsal horn; terminals from the splenius are accumulated in the lateral parts of these laminae, where-us those of the quadriceps are more concentrated in the medial areas. 4. Within the brain stem, most afferents from the splemus terminate in the external cuneate nucleus. Most of the quadriceps afferents course to the gracile nucleus. 5. Terminals from both muscle nerves were found in the area of the spinal vestibular nucleus. In conclusion, the most conspicuous results were: 1) Besides the segmental projection to the dorsal horn there is an almost exclusive projection of splenius primary afferents to relay nuclei to the cerebellum. 2) The relatively high ratio: end plate size/muscle fiber volume, which is characteristics of finely adjusting muscles. These results provide additional clues to the understanding of the particular role of the neck muscles in posture and head movement.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of medicinal chemistry 15 (1972), S. 1032-1035 
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 898-900 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report for the first time the epitaxy of CoSi2 on 〈111〉 Si submicron lines together with the overgrowth of Si on top of the resulting grating. Results indicate that strain fields and huge mass transport control the morphology of the resulting structures. Silicon is shown to grow two dimensionally when the grating period is in the submicrometer range. Preliminary results on the electrical performance of those Si/CoSi2 /Si permeable base transistors are presented.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5493-5500 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: After Zn diffusion into Si-doped GaAs (n≈1.5×1018 cm−3), the Zn-diffused samples are annealed under different conditions: (i) in vacuum, (ii) in arsenic vapor, and (iii) with a Si3N4 mask capping the sample surface. The Zn concentration profiles obtained by secondary-ion-mass spectroscopy and the photoluminescence (PL) spectra taken at different depths below the sample surface are studied in detail. After annealing in vacuum, the steep (p+-n) Zn diffusion front advances into the bulk. We observe that the intensity ratio between the Si donor-gallium vacancy complex (SiGa-VGa) related emission band and the band-to-band (e-h) transition is enhanced in the region ahead of the Zn diffusion front. In contrast, Zn atoms diffuse deeper into the bulk of the samples annealed in arsenic vapor with or without capping layer. These samples show the kink-and-tail (p+-p-n) Zn concentration profiles with a decrease in the intensity ratio around the tail region. The analysis of the PL data suggest a supersaturation of gallium vacancies ahead of the diffusion front of the sample annealed in vacuum and an undersaturation of this defect around the tail region of the samples annealed in As vapor. Our results underline the important role of the nonequilibrium of the defect concentration during the postdiffusion annealing, which permits explanation of the anomalous double profile of Zn by the interstitial-substitutional mechanism.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 970-972 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This communication discusses the physical origin of the diffusion enhancement observed by various authors at high doping levels during the annealing of dopant-implanted silicon. It is shown that the experimental results can be accounted for by the percolation model previously developed for high-concentration phosphorus diffusion. A quantitative treatment is given in the case of the diffusion of implanted Sb in heavily doped n-type silicon.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1096-1102 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electron paramagnetic resonance has been used to study the isochronal and isothermal irreversible annealing of E1 defects induced in amorphous SiO2 by implantation of He+, N+, O+, and Bi+ ions. The annealing behavior observed is successfully compared to predictions based on two models for diffusion-limited thermally activated processes: a simple model of a first-order unimolecular recombination, and Simpson and Sosin's model for bimolecular recombination of closely spatially correlated Frenkel pairs. In both cases it has been assumed that the diffusion process is controlled by a Gaussian distribution of the activation energy for diffusion. It is shown that both models offer a consistent interpretation of the annealing behavior observed, indicating that for the temperature range between 500–800 °C, the irreversible thermal annealing of E'1 defects in ion-implanted amorphous SiO2 is controlled by unimolecular recombination. A new enhanced annealing effect has been observed in amorphous SiO2 implanted with chemically active N+ and O+ impurities.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2681-2687 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper, we present a physical explanation for the dopant surface segregation during two-dimensional growth in molecular-beam epitaxy. It is shown that the only way to explain dopant behavior is to assume the climbing of dopant atoms over the steps on the surface, during the growth. An energetical analysis of such phenomenon is presented. Taking into account this mechanism during two-dimensional growth, two kinetic equations can be written for each layer. Resolution of the system provides analytical solutions, and the growth rate influence on the doping profile is justified. The applicability of this approach to several dopants both in GaAs and Si is discussed. It appears that the origin of this segregation phenomenon lies in the unfavorable energy situation for the incorporation of a dopant instead of a bulk material atom.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 45-47 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A depletion-mode field-effect transistor is used to determine the electrical characteristics of a silicon-on-insulator (SOI) structure such as the Si film doping, the fixed oxide charges, and the interface trapped charges at the Si/SiO2 interfaces. We consider the case of a very thin Si film, i.e., the Si film thickness is smaller than the maximum depletion layer width. The electrical parameters of the SOI structure are derived from drain-source current versus gate voltage and transconductance characteristics, provided that the back Si surface is accumulated by a proper substrate biasing. The device can be of small dimensions and can be used in process control without any extra process step.
    Type of Medium: Electronic Resource
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