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  • 1
    Electronic Resource
    Electronic Resource
    Strain effects on As and Sb segregates immersed in annealed GaAs and GaSb by Raman spectroscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3631-3633 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering was used to obtain information about residual strains on As and Sb segregates immersed in GaAs and GaSb annealed at high temperatures. Eg and A1g modes of As and Sb in annealed GaAs and GaSb Raman spectra showed that the segregates are in the crystalline phase. Tensile stresses on As segregates were evident, while the Sb segregates were found to be practically relaxed. The temperature dependence of the stresses on segregates were determined. The different annealing temperatures used in this work were found to not cause substantial changes in stresses on segregates. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355697
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  • 2
    Electronic Resource
    Electronic Resource
    Paramagnetic molecular center in natural sodalite (1984)
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 88 (1984), S. 3494-3496 
    Details
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/j150660a024
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  • 3
    Electronic Resource
    Electronic Resource
    Short-range disorder in lanthanum-doped lead titanate ceramics probed by Raman scattering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 897-899 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to probe short-range structural information on lanthanum-doped lead titanate ceramics (LaxPb1−xTiO3) for x, ranging from 0.0 to 0.30. In highly doped samples (x〉0.27), x-ray diffraction measurements indicate a cubic structure, although measurements of Raman scattering at temperatures above and below the tetragonal to cubic transition showed a residual short-range structural disorder in the cubic phase. Moreover, for these highly lanthanum-doped samples, a well-defined temperature-induced ferro–paraelectric phase transition disappears, which suggests a relationship between local disorder and relaxor behavior in this material. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120929
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  • 4
    Electronic Resource
    Electronic Resource
    Alloying effects on the critical layer thickness in InxGa1−xAs/InP heterostructures analyzed by Raman scattering (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 436-438 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering has been used to estimate the critical layer thickness and to analyze the alloying effect on strain relaxation in InxGa1−xAs layers grown by molecular beam epitaxy on InP [001]-oriented substrate, for x ranging from 0.0 to 1.0. Measurements of longitudinal optical GaAs-like phonon frequency and Raman linewidth showed that the indium/gallium ratio contents greatly influences the strain relaxation. A comparison between Raman and x-ray diffraction measurements of relaxation ratios as a function of layer thickness is presented. The results can be explained in terms of the combined effect of strain and chemical and structural disorder. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120800
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  • 5
    Electronic Resource
    Electronic Resource
    Strain relaxation in [001]- and [111]-GaAs/CaF2 analyzed by Raman spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 1126-1132 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Study is devoted to a complete characterization of GaAs/CaSrF2/CaF2 heterostructures. Due to the transparency of CaF2 substrate to visible light, Raman spectra have been obtained at both interface and surface sides of the 2 μm GaAs layer. Moreover, penetration depth of light varying with wavelength allows one to perform a tomography of this layer. The crystalline quality at the vicinity of the surface is analyzed through Raman selection rules for both [001] and [111] growth directions. In the latter case, a stress profile has been realized in order to determine its relaxation into the GaAs layer: It occurs in the first 40 nm from the interface. Finally, this methodology is applied to optimize growth conditions in order to obtain stable highly strained systems. By comparison with photoluminescence data, the Raman probe is shown to be very efficient for this purpose. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358975
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  • 6
    Electronic Resource
    Electronic Resource
    Raman scattering study of [hhk]-GaAs/(Si or CaF2) strained heterostructures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 2773-2780 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy is used to measure the frequency shift, symmetry, and activity of long-wavelength optical phonons in several GaAs strained epilayers. The results are compared with theoretical evaluations using the elastic compliances, phonon deformation potentials, and Raman tensors. The effect of growth direction ([001], [111], and [112]) and the substrate nature (Si or CaF2) is analyzed. The importance of nonstandard growth directions, [111] or [112], on residual stress and piezoelectric effect is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357542
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  • 7
    Electronic Resource
    Electronic Resource
    Erratum: Raman scattering study of [hhk]-GaAs/[Si or CaF(2)] strained heterostructures [J. Appl. Phys. 76, 2773 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2849-2849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359612
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  • 8
    Electronic Resource
    Electronic Resource
    Raman characterization of structural disorder and residual strains in micromachined GaAs (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1280-1283 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Structural disorder and strain effects in ductile-regime single-point-diamond-turned gallium arsenide monocrystalline samples were probed by Raman scattering. The positive frequency shift of the longitudinal and transverse optical phonons observed in the machined samples indicate a residual compressive stress of about 1.5 GPa. This residual strain was attributed to the hysteresis of phase transformation generated by the high pressure imposed by the cutting tool tip during the machining process. The broadening of the Raman peaks indicate a high degree of structural disorder in the GaAs lattice. Moreover, the Raman spectrum of annealed samples, after machining, shows a less disordered but still misoriented matrix. In addition, it was found that crystalline arsenic formed into the surface vicinity. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372009
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  • 9
    Electronic Resource
    Electronic Resource
    Anharmonic frequency shift of long-wavelength phonons in As and Sb (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2924-2925 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman scattering was used to study the temperature dependence of the phonon frequencies of Eg and A1g modes of crystalline arsenic and antimony. The partial derivative of the frequency versus temperature for both materials was determined from a linear fitting approximation. The real anharmonic contribution to the shift was obtained after correction had been made for the contribution of thermal expansion. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320864
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  • 10
    Electronic Resource
    Electronic Resource
    Visible photoluminescence in amorphous ABO3 perovskites (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 253-255 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence observed in ABO3 type perovskite in their highly structural disordered state can be explained by a model in which is assumed a distribution of electronic states localized within the energy band gap coupled to lattice local vibrational states. The model fits very well the experimental results and indicates that photoluminescence in the visible region can be considered as a general behavior of disordered solids. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1494464
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