ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Electron tunneling in a heterostructure with a single doped barrier was investigated. Analysis of the experimental data showed that all features in the tunneling conductance are due to electron tunneling between two-dimensional electron sheets which appear on different sides of the barrier as a result of ionization of impurities in the barrier. Electron transport between the two-dimensional electron sheets and three-dimensional contact regions does not introduce significant distortions in the measured tunneling characteristics. In such structures there is no current flow along the two-dimensional electron gas; such a current ordinarily makes it difficult to investigate tunneling between two-dimensional electronic systems in magnetic fields.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187434
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