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  • 1
    Electronic Resource
    Electronic Resource
    A Multi-Model View of Process Modelling (1999)
    Springer
    Requirements engineering 4 (1999), S. 169-187 
    Details
    ISSN: 1432-010X
    Keywords: Key words:Method engineering – Process enactment mechanism – Process guidance – System development process modelling
    Source: Springer Online Journal Archives 1860-2000
    Topics: Computer Science
    Notes: Situatedness of development processes is a key issue in both the software engineering and the method engineering communities, as there is a strong felt need for process prescriptions to be adapted to the situation at hand. The assumption of the process modelling approach presented in this paper is that process prescriptions should be selected according to the actual situation at hand, i.e. dynamically in the course of the process. The paper focuses on a multi-model view of process modelling which supports this dynamicity. The approach builds on the notion of a labelled graph of intentions and strategies called a map as well as its associated guidelines. The map is a navigational structure which supports the dynamic selection of the intention to be achieved next and the appropriate strategy to achieve it, whereas guidelines help in the operationalisation of the selected intention. The paper presents the map and guidelines and exemplifies the approach using the CREWS-L’Ecritoire method for requirements engineering.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s007660050018
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  • 2
    Electronic Resource
    Electronic Resource
    Jugular blood plasma acetylcholinesterase (AchE) activity during oestrus in dairy cattle
    Amsterdam : Elsevier
    Animal Reproduction Science 27 (1992), S. 264-267 
    Details
    ISSN: 0378-4320
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0378-4320(92)90141-Y
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  • 3
    Electronic Resource
    Electronic Resource
    Polyamine analogs with antitumor activity (1990)
    s.l. : American Chemical Society
    Journal of medicinal chemistry 33 (1990), S. 1369-1375 
    Details
    ISSN: 1520-4804
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jm00167a014
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  • 4
    Electronic Resource
    Electronic Resource
    A reply (2002)
    Oxford, UK : Blackwell Science, Ltd
    Anaesthesia 57 (2002), S. 0 
    Details
    ISSN: 1365-2044
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1046/j.1365-2044.2002.2412_21.x
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  • 5
    Electronic Resource
    Electronic Resource
    UNUSUAL EFFECT OF SOME α-MERCAPTOACRYLIC ACIDS ON METABOLISM OF ZINC IN THE RAT (1977)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental pharmacology and physiology 4 (1977), S. 0 
    Details
    ISSN: 1440-1681
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: 1. Gavage of rats with β-aryl derivatives of α-mercaptoacrylic acid resulted in pronounced and sustained elevation of serum zinc concentration. Greater than ten-fold increases above normal zinc levels were attained 2–8 h after doses of 50 mg/kg of the phenyl and furan derivatives.2. These compounds were rapidly absorbed from the rat gastrointestinal tract and could be detected in serum for several days after a single dose. The return of serum zinc concentration to the normal level paralleled clearance of the mercaptoacrylic acid from plasma.3. Close to 100% of the zinc and of the α-mercapto-β-(2-furan)acrylic acid (MFA) in serum 4 h after administration of the compound were bound to serum macromolecules.4. MFA decreased excretion of endogenous zinc; it altered neither the gastrointestinal absorption of zinc nor serum concentrations of copper, albumin and total protein.5. These compounds appear to mobilize zinc from tissue stores and retard zinc clearance from plasma.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1440-1681.1977.tb02373.x
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  • 6
    Electronic Resource
    Electronic Resource
    FORMATION OF A TERNARY COMPLEX WITH SERUM ALBUMIN: AN EXPLANATION FOR THE EFFECT OF α-MERCAPTO-β-(2-FURAN) ACRYLIC ACID ON RAT PLASMA ZINC CLEARANCE (1977)
    Oxford, UK : Blackwell Publishing Ltd
    Clinical and experimental pharmacology and physiology 4 (1977), S. 0 
    Details
    ISSN: 1440-1681
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Medicine
    Notes: 1. Four, six and eight hours after gavage of rats with α-mercapto-β-(2-furan) acrylic acid (MFA) (25 mg/kg) serum zinc concentration was increased ten-fold over control levels and a mean molar ratio of 1 albumin:0.4 zinc:0.8 MFA was found for seventeen sera.2. At pH 7.5 a maximum of 1 mole of MFA could be bound per mole of metal-free bovine serum albumin.3. In the presence of zinc ion, albumin-zinc-MFA complexes formed, since for each mole of albumin-zinc complex an additional mole of MFA could be bound to albumin. Complexes up to a molar stoichiometry of 1 albumin:2 zinc:3 MFA were prepared.4. MFA stabilized the albumin-zinc complex against dissociation.5. Formation of similar complexes in vivo may account for the markedly delayed clearance of plasma zinc seen in rats administered β-aryl derivatives of α-mercaptoacrylic acid.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1440-1681.1977.tb02374.x
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  • 7
    Electronic Resource
    Electronic Resource
    Segregation effects of Li, K, and F in Si during depth profiling by oxygen ions (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 2178-2184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The migration behavior of Li, K, and F during secondary ion mass spectrometry (SIMS) depth profiling was investigated in both n- and p-type Si using different oxygen bombardment conditions. The presence of an electric field across the surface oxide is shown to be the major driving force for both the segregation of Li and K at the SiO2/Si interface and the antisegregation of F into the oxide. Room temperature SIMS measurements revealed that K segregates at the oxide side of the SiO2/Si interface, whereas Li segregates at the silicon side of the interface. We have also found that the field-induced segregation of Li and antisegregation of F are less pronounced in high resistivity (11 000–16 000 Ω cm) p-type Si than in low resistivity (∼0.011 Ω cm) n-type Si. Although Li segregates at the Si side of the interface in both types of Si, some Li, however, remains at the oxide side in the high resistivity p-type Si. The high solid solubility of Li in amorphous Si is also considered as a driving force for its segregation. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372159
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  • 8
    Electronic Resource
    Electronic Resource
    On the migration behavior of metal impurities in Si during secondary ion mass spectrometry profiling using low-energy oxygen ions (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3993-3998 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Secondary ion mass spectrometry (SIMS) was used to investigate the segregation of several metal impurities in Si under low-energy oxygen ion bombardment. Our results suggested that both the segregation of Ca, Cr, and Ta at the SiO2/Si interface, and the antisegregation of Ti, Hf, and Zr into the oxide were thermodynamically driven. The migration behavior of Ca indicates that CaO, having a higher heat of formation than Si, was most probably formed under oxygen bombardment. Sharper in-depth profiles were obtained for Ti, Zr, and Hf (metals with lower heat of oxide formation than Si) by bombarding at angles of incidence for which a stoichiometric surface oxide is formed. The effect of impurity diffusivity is demonstrated through SIMS measurements at elevated temperatures (∼350–380 °C) for Cr, Zr, Ta, and Ti. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370302
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  • 9
    Electronic Resource
    Electronic Resource
    Defect engineering in annealed n-type GaAs epilayers using SiO2/Si3N4 stacking layers (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2561-2563 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used SiO2/Si3N4 stacking layers to control the creation of defects in rapid thermally annealed epitaxial GaAs layers. Annealing at 900 °C introduces three electron traps S1 (Ec−0.23 eV), S2 (Ec−0.53 eV), and S4 (Ec−0.74 eV) in SiO2/n-GaAs. The concentrations of S1 and S4 decreased by factors of ∼28 and ∼19, respectively, in Si3N4/SiO2/n-GaAs. The overlap of a hole trap with the S2 peak in Si3N4/SiO2/n-GaAs results in an apparent decrease in the concentration of S2 by over two orders of magnitude. The lower concentration of defects in the region probed by deep level transient spectroscopy is explained by the tensile stress which the Si3N4 layer imposes on the structure during annealing. In addition to S1 and S4, hole traps H1 (Ev+0.28 eV) and H2 (Ev+0.42 eV) are observed in Si3N4/n-GaAs and SiO2/Si3N4/n-GaAs, respectively. The concentration of defects is larger by ∼1.5 times in the latter structure. SiO2/Si3N4 stacking layers can, therefore, be used to achieve spatially selective modification of GaAs-based structures using defect engineering. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1410870
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  • 10
    Electronic Resource
    Electronic Resource
    Trap-limited migration of vacancy-type defects in 7.5 keV H−-implanted Si (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1577-1579 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active defects in the n-type samples was monitored by capacitance–voltage and deep level transient spectroscopy measurements, respectively. The defects were responsible for free carrier compensation to depths exceeding ∼1 μm beyond the top ∼0.25 μm region of samples where they were generated. We describe a close relationship between generation of the VO–H complex and the VP pair on the free carrier compensation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456952
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