ISSN:
1089-7623
Source:
AIP Digital Archive
Topics:
Physics
,
Electrical Engineering, Measurement and Control Technology
Notes:
Observations on steady state ion-rich sheath around a negatively biased grid in a double plasma device have been made in multicomponent plasma with negative ions. A hump in the potential profile is found to occur at the sheath edge. The characteristics of the hump depend on the grid voltage, source biasing voltage, density difference in the two chambers, and the negative to positive ion concentration ratio. It is argued that resonance which is coupled with the beam ions and background ions is associated in the excitation mechanism to create the nonsymmetrical structures in the plasma potential profile. Below the critical concentration ratio, the hump grows in height and above the critical ratio, the width of the hump increases but the height decreases and ultimately it vanishes. The variation in the hump potential profile due to the injection of negative ions can be explained by the ion momentum exchange and by their dynamics. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1150683
Permalink
