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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 3881-3883 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 5190-5204 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: A model is developed to describe the kinetics of the three scattering channels—unreactive scattering and dissociative chemisorption via single atom abstraction and two atom adsorption—that are present in the interaction of F2 with Si(100). The model provides a good description of the non-Langmuirian coverage dependence of the probabilities of single atom abstraction and two atom adsorption, yielding insight into the dynamics of the gas–surface interaction. The statistical model is based on the premise that the two dissociative chemisorption channels share a common initial step, F atom abstraction. The subsequent interaction, if any, of the complementary F atom with the surface determines if the overall result is single atom abstraction or two atom adsorption. The results are consistent with the orientation of the incident F2 molecular axis with respect to the surface affecting the probability of single atom abstraction relative to two atom adsorption. A perpendicular approach favors single atom abstraction because the complementary F atom cannot interact with the surface, whereas a parallel approach allows the F atom to interact with the surface and adsorb. The fate of the complementary F atom is dependent on the occupancy of the site with which it interacts. The model distinguishes between four types of dangling bond sites on the Si(100)(2×1) surface, based on the occupancy of the site itself and that of the complementary Si atom in the Si surface dimer. The results show that the unoccupied dangling bond sites on half-filled dimers are about twice as reactive as those on empty dimers, which is consistent with an enhanced reactivity due to a loss of a stabilizing π interaction between the two unoccupied dangling bonds on a dimer. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 111 (1999), S. 3679-3695 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: In the interaction of low energy F2 with Si(100) at 250 K, a dissociative chemisorption mechanism called atom abstraction is identified in which only one of the F atoms is adsorbed while the other F atom is scattered into the gas phase. The dynamics of atom abstraction are characterized via time-of-flight measurements of the scattered F atoms. The F atoms are translationally hyperthermal but only carry a small fraction (∼3%) of the tremendous exothermicity of the reaction. The angular distribution of F atoms is unusually broad for the product of an exothermic reaction. These results suggest an "attractive" interaction potential between F2 and the Si dangling bond with a transition state that is not constrained geometrically. These results are in disagreement with the results of theoretical investigations implying that the available potential energy surfaces are inadequate to describe the dynamics of this gas–surface interaction. In addition to single atom abstraction, two atom adsorption, a mechanism analogous to classic dissociative chemisorption in which both F atoms are adsorbed onto the surface, is also observed. The absolute probability of the three scattering channels (single atom abstraction, two atom adsorption, and unreactive scattering) for an incident F2 are determined as a function of F2 exposure. The fluorine coverage is determined by integrating the reaction probabilities over F2 exposure, and the reaction probabilities are recast as a function of fluorine coverage. Two atom adsorption is the dominant channel [P2=0.83±0.03(95%, N=9)] in the limit of zero coverage and decays monotonically to zero. Single atom abstraction is the minor channel (P1=0.13±0.03) at low coverage but increases to a maximum (P1=0.35±0.08) at about 0.5 monolayer (ML) coverage before decaying to zero. The reaction ceases at 0.94±0.11(95%, N=9) ML. Thermal desorption and helium diffraction confirm that the dangling bonds are the abstraction and adsorption sites. No Si lattice bonds are broken, in contrast to speculation by other investigators that the reaction exothermicity causes lattice disorder. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 1249-1257 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dissociative chemisorption of O2 on the Al(111) surface is investigated by means of a Monte Carlo simulation that incorporates two mechanisms that have been proposed for this reaction in the literature: single atom abstraction and two-atom adsorption that generates translationally hot atoms on the surface. A comparison is made to the much-debated STM results of Brune et al. [J. Chem. Phys. 99, 2128 (1993)], in which the oxygen island density (number of islands per binding site) was determined as a function of coverage. Since the two-atom channel has been discussed heavily in the literature, we focus primarily on the abstraction mechanism. We show that atom abstraction in its basic form is incompatible with the STM results; however, we propose two simple modifications that enable atom abstraction to reproduce the STM results. In the first modification, the probability of dissociation is higher at sites next to preexisting O adatoms. In essence, we are proposing that the increased Al–O bond strength at sites next to preexisting O adatoms [Jacobsen et al., Phys. Rev. B 52, 14954 (1995)] stabilizes the transition state for dissociation. If atom abstraction is assumed to be the only operative mechanism, and if its probability increases by a factor of ∼10 next to a site that is occupied versus unoccupied, the STM island density data can be approximately reproduced. In the second modification, the abstracted atom is permitted to make a single hop in the direction of a preexisting, nearby O adatom. The allowance of merely a single, directed hop has a dramatic effect on the coverage dependence of the island density. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
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