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  • 1
    Electronic Resource
    Electronic Resource
    Growing carbon nanotubes by microwave plasma-enhanced chemical vapor deposition (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3437-3439 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A processing route has been developed to grow bundles of carbon nanotubes on substrates from methane and hydrogen mixtures by microwave plasma-enhanced chemical vapor deposition, catalyzed by iron particles reduced from ferric nitrate. Growth takes place at about 900 °C leading to nanotubes with lengths of more than 20 μm and diameters on the nanometer scale. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121658
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  • 2
    Electronic Resource
    Electronic Resource
    Control of diamond film microstructure by Ar additions to CH4/H2 microwave plasmas (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1981-1989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transition from microcrystalline to nanocrystalline diamond films grown from Ar/H2/CH4 microwave plasmas has been investigated. Both the cross-section and plan-view micrographs of scanning electron microscopy reveal that the surface morphology, the grain size, and the growth mechanism of the diamond films depend strongly on the ratio of Ar to H2 in the reactant gases. Microcrystalline grain size and columnar growth have been observed from films produced from Ar/H2/CH4 microwave discharges with low concentrations of Ar in the reactant gases. By contrast, the films grown from Ar/H2/CH4 microwave plasmas with a high concentration of Ar in the reactant gases consist of phase pure nanocrystalline diamond, which has been characterized by transmission electron microscopy, selected area electron diffraction, and electron energy loss spectroscopy. X-ray diffraction and Raman spectroscopy reveal that the width of the diffraction peaks and the Raman bands of the as-grown films depends on the ratio of Ar to H2 in the plasmas and are attributed to the transition from micron to nanometer size crystallites. It has been demonstrated that the microstructure of diamond films deposited from Ar/H2/CH4 plasmas can be controlled by varying the ratio of Ar to H2 in the reactant gas. The transition becomes pronounced at an Ar/H2 volume ratio of 4, and the microcrystalline diamond films are totally transformed to nanocrystalline diamond at an Ar/H2 volume ratio of 9. The transition in microstructure is presumably due to a change in growth mechanism from CH3⋅ in high hydrogen content to C2 as a growth species in low hydrogen content plasmas.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368331
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  • 3
    Electronic Resource
    Electronic Resource
    Synthesis of nanocrystalline diamond thin films from an Ar–CH4 microwave plasma (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 540-543 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline diamond thin films have been synthesized in an Ar–CH4 microwave discharge, without the addition of molecular hydrogen. X-ray diffraction, transmission electron microscopy, and electron energy loss spectroscopy characterizations show that the films consist of a pure crystalline diamond phase with very small grain sizes ranging from 3 to 20 nm. Atomic force microscopy analysis demonstrates that the surfaces of the nanocrystalline diamond films remain smooth independent of the film thicknesses. Furthermore, the reactant gas pressure, which strongly affects the concentration of C2 dimer in the Ar–CH4 plasma as well as the growth rate of the films, has been found to be a key parameter for the nanocrystalline diamond thin film depositions. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366668
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  • 4
    Electronic Resource
    Electronic Resource
    Synthesis and electron field emission of nanocrystalline diamond thin films grown from N2/CH4 microwave plasmas (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 4546-4550 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanocrystalline diamond films have been synthesized by microwave plasma enhanced chemical vapor deposition using N2/CH4 as the reactant gas without additional H2. The nanocrystalline diamond phase has been identified by x-ray diffraction and transmission electron microscopy analyses. High resolution secondary ion mass spectroscopy has been employed to measure incorporated nitrogen concentrations up to 8×1020 atoms/cm3. Electron field emission measurements give an onset field as low as 3.2 V/μm. The effect of the incorporated nitrogen on the field emission characteristics of the nanocrystalline films is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366190
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  • 5
    Electronic Resource
    Electronic Resource
    The multislice program for use on a PC-style desktop computer (1987)
    Copenhagen : International Union of Crystallography (IUCr)
    Applied crystallography online 20 (1987), S. 442-444 
    Details
    ISSN: 1600-5767
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Geosciences , Physics
    Notes: Computation of electron diffraction and multi-beam lattice images using the multislice formulation for the theory of dynamical scattering of electrons by a crystal has been realized on a personal computer programmed in Fortran 77.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0021889887086291
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  • 6
    Electronic Resource
    Electronic Resource
    Crystalline plate-like SiO2 precipitates in silicon and their relation with new donors (1989)
    Springer
    Journal of materials science 24 (1989), S. 3573-3576 
    Details
    ISSN: 1573-4803
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Czochralski grown silicon annealed at 750° C has been investigated with high-resolution electron microscopy, Hall effect and infrared measurement. Crystalline plate-like precipitates were observed and identified asβ-cristobalite. The structure of the coherent interface of the new phase and its connection with the origin of the new donor are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF02385742
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  • 7
    Electronic Resource
    Electronic Resource
    CVD synthesis of carbon nanotubes (1997)
    Springer
    Journal of materials science 16 (1997), S. 457-459 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Abstracts are not published in this journal
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1018504108114
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