Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 2960-2963
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Molecular-beam-epitaxial GaN layers change from strongly conductive (ρ(approximately-equal-to)10−2 Ω cm at 300 K) to semi-insulating (ρ(approximately-equal-to)106 Ω cm) as the N flux is increased. Layers grown at low fluxes show strong n-type conduction, with transport in the conduction band at high temperatures and in a shallow donor band at low temperatures. For layers grown at high N fluxes, the Hall coefficients become too small to measure, suggesting hopping conduction among deep centers. The temperature-dependent resistivity data are most consistent with multiphonon, rather than single-phonon, hopping. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363128
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