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  • 1
    Electronic Resource
    Electronic Resource
    Channeling and nuclear reaction analysis of shallow B- and BF2- implanted Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4424-4429 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion channeling and nuclear reaction analysis (NRA) have been used to study rapid thermal annealing (RTA) of 10-keV B- and 45-keV BF2-implanted, crystalline, and preamorphized Si. Samples were capped with SiO2 and annealed in a nitrogen atmosphere with an AG Associates 210T Heatpulse system. Damage depth distributions were determined with He+ ion channeling. Extensive disorder was observed near the B projected range following a 1050 °C/20-s RTA cycle of B-implanted crystalline Si. For the same annealing conditions, much less residual damage was apparent for B-implanted preamorphized Si. No disorder was observed in the near-surface region (〈30 nm) following a 1050 °C/20-s RTA cycle of BF2-implanted, crystalline, and preamorphized Si. Post-anneal damage at the original amorphous/crystalline interface was greater for BF2-implanted crystalline Si compared to BF2-implanted preamorphized Si. The relative retained B and F doses were determined with NRA using the 11B(p,α)8Be* and 19F(p,α0)16O reactions, respectively. A significant loss of B was observed following RTA of BF2-implanted preamorphized Si. No loss of B was apparent for all other annealed samples. A loss of F was observed for all annealed samples. For identical annealing conditions, the relative retained F dose of BF2-implanted preamorphized Si was less than that of BF2-implanted crystalline Si.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341265
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  • 2
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of shallow Sb-implanted Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 3456-3460 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing (RTA) of low-energy Sb-implanted Si has been studied with Rutherford backscattering spectrometry (RBS) and sheet-resistance measurements. For comparison, some samples were also analyzed with secondary ion mass spectrometry (SIMS). Si wafers were implanted with Sb at energies of 16, 32, and 48 keV and doses of 5×1014 and 1×1015/cm2. Samples were annealed in a nitrogen atmosphere with an AG Associates 410 Heatpulse system. RTA cycles ranged from 10 to 30 s at temperatures of 1000–1150 °C. Some samples were furnace annealed at 930 °C for 30 min. RBS experimental mean projected range and range straggle values did not differ significantly from trim code calculations. However, SIMS experimental range straggle values were ∼30% greater than RBS values. With RBS, a broadening of the Sb depth distribution and Sb accumulation in the near-surface region (〈5 nm) were observed for furnace-annealed samples and, to a lesser extent, for those subjected to RTA. The relative retained SB dose decreased as RTA temperature and/or time increased. No loss of Sb was observed for furnace-annealed samples. For a dose of 5×1014/cm2, lower sheet-resistance values were obtained following RTA of a 32-keV Sb implant compared to a 30-keV As implant. The opposite was true for a dose of 1×1015/cm2.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341478
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  • 3
    Electronic Resource
    Electronic Resource
    High dose, heavy ion implantation into metals: The use of a sacrificial carbon surface layer for increased dose retention (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4014-4019 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ion implantation into metals has the potential of producing metastable compounds and solutions that cannot be achieved using conventional processing methods. However, when high doses of heavy ions into metals are necessitated, the technique is often limited by sputtering effects which dictate a maximum achievable implanted ion concentration in the target. Sputtering of light materials (such as C) by heavy ions is much less significant, however. This study investigates the feasibility of "protecting'' a metal target surface from sputtering during a heavy ion implant by using a thin "sacrificial'' C layer deposited on the target surface. Uncoated and C-coated (∼1000-A(ring)-thick C) Cu targets were bombarded with 600–1000 keV I− ions to a total dose of ∼2×1017 I/cm2. Uncoated samples displayed typical saturation behavior, retaining between 17% and 42% of the dose, depending on the energy. The maximum I concentration achieved in the uncoated samples was about 6 at. %. Excellent results were achieved with the C-coated samples, with retentions of 100% and peak I concentrations between 18 and 33 at. %. Significant mixing of C was found to occur at the C/Cu interface, however as the implantation energy was increased the I concentration profile shifted more deeply into the sample and away from the mixed C/Cu region. This suggested that higher energies and careful tailoring of the implant parameters can eliminate any problems with C mixing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352254
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  • 4
    Electronic Resource
    Electronic Resource
    A novel appproach to secondary defect reduction in separation by implantation of oxygen material (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4939-4947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of a preanneal Si implant after the initial O implant in the fabrication of separation by implantation of oxygen (SIMOX) material has been examined. In addition to studying the effect of the Si dose and implant temperature on the residual disorder, the Si implant energy was varied in order to elucidate the mechanism of secondary defect reduction in SIMOX material. Initial experiments showed that a low implant temperature (150 °C) and a moderate dose (5×1016 cm−2) of 4.2 MeV Si ions were the most successful in reducing the volume fraction of polycrystalline Si at the front Si/SiO2 interface. A systematic study of low-, medium-, and high-energy Si implantation with ion ranges less than, equal to, and greater than the initial O implant has been performed. The Si range and defect production per ion were shown to be most important in determining the final defect structure in SIMOX material formed by MeV O implantation in Si. Low- and medium-energy Si-implanted SIMOX material has a more homogeneous buried SiO2 layer and a less defected Si overlayer than virgin SIMOX (O-implanted Si which has not received a preanneal Si implant). The high-energy Si implant slightly reduced the defect density in the Si overlayer and planarized the back Si/SiO2 interface for SIMOX material formed at an implantation temperature of 300 °C but did not homogenize the buried SiO2 layer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355783
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  • 5
    Electronic Resource
    Electronic Resource
    The use of an Al sacrificial layer to improve retention during high dose Pt ion implantation into Ni (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6619-6624 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our previous work [Clapham, Whitton, Ridgway, Hauser, and Petrovic, J. Appl. Phys. 72, 4014 (1992) and Clapham, Whitton, and Ruck, Nucl. Instrum. Methods B 80/81, 501 (1993)] has shown that the sputtering limitation often associated with high-dose, heavy ion implantation into metals can be overcome by using a thin (∼1000 A(ring)) C sacrificial layer. This layer, which is deposited on the surface prior to implantation, sputters slowly during bombardment, thus protecting the underlying target. The present study further investigates the potential of the sacrificial layer technique, using Al as a sacrificial layer on a Ni target implanted with high doses (to 7×1017 ions/cm2) of 5 MeV Pt ions. The Al layer was found to be very effective in enhancing retention of the implanted Pt, with 100% retention and a maximum concentration of 19 at. % Pt achieved for the highest dose. This compares with a saturation concentration of ∼10 at. % Pt when no sacrificial layer was used. The mixing behavior of Al into Ni was consistent with other studies conducted at lower ion energies. The temperature region of radiation-enhanced diffusion was established, and the phase Ni3Al was found to be present in the Al/Ni mixed region after Pt bombardment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355102
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  • 6
    Electronic Resource
    Electronic Resource
    Isotope effects for mega-electron-volt boron ions in amorphous silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 4836-4840 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The depth profiles of 10B and 11B implanted into amorphous silicon have been analyzed by secondary ion mass spectrometry. Implantation energies between 0.4 and 5.0 MeV were used, and each sample was sequentially implanted with both 10B and 11B without changing the acceleration voltage but only the field in the mass analyzing magnet. A shift between the two profiles is clearly resolved and has been carefully studied as a function of ion energy. A maximum shift of 3.5% in mean projected range (Rp) is revealed at 0.6–0.8 MeV [Rp(11B)≥Rp(10B)], and for higher energies the ratio Rp(11B)/Rp(10B) decreases slowly to a value of ∼1.006 at 5.0 MeV. This reverse shift (heavier isotope penetrates deeper) is attributed to a larger electronic stopping cross section (Se) for 10B than for 11B at a given energy E where Se∼Ep and p≥0. The experimental data for Rp(11B)/Rp(10B) and Rp(11B) are compared with calculations, and it is demonstrated that the variation of Rp(11B)/Rp(10B) with ion energy hinges strongly on the Se vs E dependence. A close velocity proportional dependence (p=0.50±0.03) is found to be valid up to ∼300 keV, and then p decreases gradually with a maximum in Se (p=0) at ∼2.0 to 2.5 MeV. A semiempirical expression is presented for Se and shown to yield excellent agreement with both the relative isotope shift and the absolute range values; the deviations are less than 0.2% and 3.0%, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353798
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  • 7
    Electronic Resource
    Electronic Resource
    Electrical inactivation in Pb-implanted InP (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7545-7548 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pb-implanted InP has been characterized with electrical measurements, Rutherford backscattering spectrometry combined with channeling (RBS/C), and transmission electron microscopy (TEM). Although donor activation can be achieved in InP with implantation and annealing of all group-IV elements of lesser mass, the n-type conductivity measurable in Pb-implanted InP is attributed not to ionized Pb donors but to implantation-induced disorder. The latter was verified with samples implanted with the isoelectronic group-V element Bi which yielded both comparable disorder and conductivity. Furthermore, RBS/C measurements indicate that for impurity concentrations of ∼1×1020 atoms/cm3, only ∼5% and ∼17% of Pb and Bi atoms, respectively, occupy substitutional or near-substitutional lattice positions following rapid thermal annealing. Pb precipitates, as evident with TEM, comprise a significant component of the post-anneal, nonsubstitutional atom fraction. Conversely, the as-implanted, substitutional fractions of Pb and Bi atoms are both ∼85%. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362409
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  • 8
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of Sn-implanted InP (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2375-2379 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rapid thermal annealing (RTA) of Sn-implanted InP has been investigated with a variety of analytical techniques including electrical measurements, Rutherford backscattering spectrometry, transmission electron microscopy and secondary-ion-mass spectrometry. RTA is shown to yield high electrical activation with negligible dopant diffusion. Incomplete electrical activation can result from dopant/defect complexes, native defect compensation, nonstoichiometry and dopant precipitation where the relative contribution of a given factor is dependent on both ion dose and annealing temperature. P coimplantation is shown to increase electrical activation through an increase in the number of ionized donors via a decrease in the number of dopant/defect complexes (in contrast to lattice site switching characteristic of dopant amphoteric character). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358761
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  • 9
    Electronic Resource
    Electronic Resource
    Buried SiO2 layer formation in Si with an MeV O ion beam (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 1133-1138 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of O implantation into Si at MeV energies and stoichiometric doses is reported. Si substrates were implanted with 1 MeV O ions to doses of 0.73, 1.45, and 2.18×1018 cm−2 at implant temperatures of 150, 300, and 450 °C. The samples were then subjected to a high temperature anneal (1250 °C for 2 h). Cross-sectional transmission electron microscopy and Rutherford backscattering combined with channeling were used to study the resultant defect structures. The microstructure after annealing was found to be highly implant temperature dependent while very little dose dependence was observed. In the Si overlayer, twinning and polycrystalline Si were observed at the lowest implant temperature while SiO2 precipitation was apparent at all temperatures with precipitate size increasing with implant temperature. In the SiO2 layer, Si islands were observed at the high implant temperatures. A comparison is made between MeV and conventional implant energies. At MeV implant energies and stoichiometric doses, crystallinity in the Si overlayer is retained even at implant temperatures as low as 150 °C. Such temperatures are shown to be advantageous for inhibiting SiO2 precipitation in the Si overlayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353278
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  • 10
    Electronic Resource
    Electronic Resource
    Electrical activation of group-IV elements implanted at MeV energies in InP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1708-1712 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical activation and carrier mobility of InP implanted with the group-IV elements at MeV energies has been studied as a function of implanted atom (C, Si, Ge, and Sn) and rapid thermal annealing temperature (500–800 °C). In addition, electrical results have been correlated with photoluminescence (PL) measurements. In general, for a dose of 5×1014/cm2 and a projected range of ∼1.0 μm, the electrical activation and carrier mobility increase then saturate with increasing annealing temperature. Similarily, PL emission intensity increases with increasing annealing temperature. At a temperature of 750 °C, the electrically active fraction increases from C, Ge, Si, to Sn, respectively, while carrier mobility and PL emission intensity decreases with increasing atomic mass. Thus, Sn exhibits the highest electrical activation yet lowest carrier mobility with little optically observable, postanneal lattice recovery.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351201
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