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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties of (11¯02) Dy/Y superlattices : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4779-4781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial (11¯02) Dy/Y rare earth superlattices and a thick (11¯02) Dy film, grown on sapphire with Y/Ta buffer layers, have been prepared by molecular beam epitaxy. Neutron diffraction and SQUID magnetization measurements on a single 200 nm thick (11¯02) Dy layer showed nearly bulk behavior. However, for the (11¯02) Dy/Y superlattices we found different magnetic behavior depending on the relative Dy to Y-layer thickness. The superlattices exhibit both ferromagnetic and helical phases, but with the Néel and Curie temperatures significantly different from bulk Dy. These results differ from previous findings in Dy/Y superlattices grown along [0001]. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361669
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  • 2
    Electronic Resource
    Electronic Resource
    Low-energy contributions to positron implantation (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3479-3496 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed knowledge of low-energy positron implantation is of considerable importance for depth profiling and data analysis in slow positron experiments. Existing Monte Carlo models are capable of simulating the behavior of positrons incident at keV energies, then following the energy-loss process to final kinetic energies of from 20 to 100 eV. A Monte Carlo calculation of the final stages of positron thermalization in Al, Cu, and Au, from 25 eV to thermal energies, is described via the mechanisms of conduction-electron and longitudinal acoustic-phonon scattering. This calculation produces a wide variety of data, including implantation profiles, fraction and energy distribution of reemitted positrons, and the mean thermalization time. A way to obtain information about positron energy loss by considering the time evolution of a point concentration (delta-function distribution) of positrons is described. Diffusion coefficients are obtained that are in good agreement with experiment. The effects of a positive positron work function are examined in the context of a positron Monte Carlo calculation. It is shown that the latter stages of thermalization can have important effects on the stopping profiles and mean depth. In particular, calculated stopping profiles and mean implantation depth are not adequately described by the Makhovian distribution, in agreement with recent experimental findings. A parameterization of these profiles is provided which will be of use in the analysis of experimental data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355282
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  • 3
    Electronic Resource
    Electronic Resource
    A portable ultrahigh vacuum organic molecular beam deposition system for in situ x-ray diffraction measurements (2001)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 72 (2001), S. 1453-1457 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A portable UHV molecular beam deposition system has been developed for synthesis, in situ, and real-time x-ray diffraction measurements of organic thin films, multilayers, and superlattices. The system has been optimized for small size, while still incorporating full features necessary to achieve thin film growth under molecular beam epitaxy (MBE) conditions. It can be used independently for thin film growth, or it can be transported and mounted on standard diffractometers. Additionally, it can be docked to a stationary multipurpose MBE growth system for sample transfer, thus permitting more extensive growth and characterization. The design and performance of this system are reported, with emphasis on modifications required to deposit organic materials. To demonstrate the capabilities for real-time x-ray scattering experiments, some preliminary results of a study of epitaxial growth of 3,4,9,10-perylene-tetracarboxylic dianhydride on Ag(111) substrates are given. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1336822
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  • 4
    Electronic Resource
    Electronic Resource
    Growth of b-axis rare earths on sapphire by molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 170-172 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A process is described whereby hcp rare-earth metals can be grown heteroepitaxially as high-quality single-crystal films with the b axis normal to the growth plane. The growth employs molecular beam epitaxy, starting from available sapphire substrates. The results of characterization by several techniques are described. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120675
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