Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Study of silicon surfaces bombarded with noble gas ions in an electron cyclotron resonance plasma (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5217-5224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of electron cyclotron resonance plasma cleaning (100)Si surfaces with low energy Ne, Ar, and Xe ions is studied by in situ x-ray photoelectron spectroscopy, high-resolution cross-sectional transmission electron microscopy, atomic force microscopy, and measurement of both the single-surface reflectance and the modulated optical reflectance. Photoemission spectra show that complete removal of all surface contaminants with oxygen atoms knocked-in from the original native Si oxide and noble gas atoms implanted into the Si substrate are a common characteristic of this plasma cleaning process. The oxygen concentration appears to decrease with ion energy for all three ions, whereas the noble gas concentration is inversely proportional to the ion mass and essentially independent of the ion energy. This low energy ion bombardment sputters the surface causing only point defects with Ne ions, formation of a continuous thin amorphous overlayer with either Ar or Xe ions, and in addition, occasional subsurface planar defects with Xe ions alone. The original smoothness of the monocrystalline Si surface is maintained with Ne ions, while an increase in surface roughness accompanies the amorphization caused by Ar and Xe ions. The magnitude of the roughness, which depends more on the energy than on the mass of either ion is insufficiently small to account for a change in specularity at visible wavelengths. An increase in both the single-surface reflectance and the modulated optical reflectance is always observed after the plasma exposure and is shown to provide a sensitive measure of these changes in surface morphology with the latter technique being a somewhat more sensitive gauge of these effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354261
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Formation and high-temperature stability of CoSix films on an SiO2 substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6265-6268 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin α-Co layer with an amorphous Si underlayer has been sputter deposited onto a thermal SiO2 substrate, rapid thermal annealed in N2 at 700–1050 °C, and the phases formed examined using Auger electron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A CoSix film results where x is constant with depth and determined by the relative amounts of Co and Si deposited. With increasing x, phases identified are α- and β-Co containing dissolved Si, Co2Si, CoSi, and CoSi2. At high temperatures, the CoSi2 film agglomerates and thins the underlying oxide probably on account of excess Si in the silicide film. Furthermore, in an N2 atmosphere, the CoSi2 globules are converted into CoSi in accordance with the phase diagram.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345142
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Effects of high carbon concentration upon oxygen precipitation and related phenomena in CzSi (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 849-855 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Effects of high carbon concentration upon oxygen precipitation and related phenomena in Czochralski (Cz) silicon have been investigated by combining various furnace and rapid thermal anneals. Our data show that oxide precipitate (OP) density, estimated from changes in interstitial oxygen concentration (ΔOi), increases with increasing substitutional carbon concentration, Cs, while thermal donor (TD) formation is inhibited at high Cs. Even though ΔOi increases monotonically with Cs, synchrotron radiation section topographs of processed high carbon content wafers (Cs∼4 ppma) exhibit Pendellösung fringes, indicating a strain-free bulk state. Our transmission electron microscope and optical microscopic data also show very few resolvable structural defects associated with precipitates inside the bulk Si. Using a thermodynamic and kinetic model, we attempt to explain: (1) reduced thermal donor formation, (2) lack of bulk stress notwithstanding high ΔOi, and (3) predominantly polyhedral precipitate morphologies in high carbon content CzSi.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341936
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Interactions of thin Ti films with Si, SiO2, Si3N4, and SiOxNy under rapid thermal annealing (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 344-353 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Ti films sputter deposited onto single-crystal Si, thermal SiO2, and low-pressure chemical vapor deposited Si3N4 and SiOxNy (x≈y≈1) substrates have been rapid thermal annealed in N2 or Ar, with and without an amorphous Si overlayer, and the reactions followed using Auger elecron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A multilayer film is created in practically every case with each layer containing essentially a single reaction product, viz.,TiSix, TiOx, δ-TiN, or TiNxO1−x. The results are discussed in light of published Ti-Si-O and Ti-Si-N phase diagrams.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341434
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Observation of slip dislocations in (100) silicon wafers after BF2 ion implantation and rapid thermal annealing (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 800-802 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The generation of slip dislocations in BF2 ion-implanted, 100-mm-diam silicon wafers during rapid thermal annealing is investigated. Whole wafer x-ray topography shows that annealing at 1150 °C causes slip to initiate randomly at positions of maximum resolved stress at the wafer edges and over scribe marks made on the back surface prior to annealing. Lowering the annealing temperature by 20 °C, which corresponds to decreasing the silicon yield stress by less than 106 dyn cm−2, prevents slip from occurring and allows sufficient removal of implantation-induced defects from which junction diodes with good current-voltage characteristics are fabricated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337377
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Reduction of interfacial tunnel defects in silicon due to chemical vapor deposition of tungsten (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 602-604 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is reported for reducing tunnel formation in p+-n Si, and a correlation is shown between tunnel defects and junction leakage. 11B+-implanted Si annealed for 30 min at 900 °C in N2 and subsequently deposited with W forms a high density of filamentary tunnel defects extending on the order of 0.1 μm from the W/Si interface. Reverse-bias leakage of 0.33-μm-deep junctions is −90 nA/cm2 at −5 V and the forward-bias ideality is 1.24 over eight decades of current. By contrast, for 11B+-implanted Si oxidized for 7 min in steam, tunnels if present are less than 0.01 μm in length. The reverse-bias leakage is −0.3 nA/cm2 at −5 V and the forward-bias ideality is 1.00. The 2×1019 cm−3 interfacial carrier concentration is the same for both deposits.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98360
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...