Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
Filter
  • 1
    Electronic Resource
    Electronic Resource
    New trends in infrared detector technology
    Amsterdam : Elsevier
    Infrared Physics and Technology 35 (1994), S. 1-21 
    Details
    ISSN: 1350-4495
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1350-4495(94)90037-X
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Computer modeling of carrier transport in PbSnSe photodiodes
    Amsterdam : Elsevier
    Infrared Physics and Technology 35 (1994), S. 837-845 
    Details
    ISSN: 1350-4495
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/1350-4495(94)90049-3
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Hg"1"-"xZn"xTe as a potential infrared detector material
    Amsterdam : Elsevier
    Progress in Quantum Electronics 13 (1989), S. 299-353 
    Details
    ISSN: 0079-6727
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0079-6727(89)90008-6
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Intrinsic infrared detectors
    Amsterdam : Elsevier
    Progress in Quantum Electronics 12 (1988), S. 87-289 
    Details
    ISSN: 0079-6727
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0079-6727(88)90001-8
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    InAs"1"-"xSb"x infrared detectors
    Amsterdam : Elsevier
    Progress in Quantum Electronics 13 (1989), S. 191-231 
    Details
    ISSN: 0079-6727
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0079-6727(89)90003-7
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Semiconductor superlattices and quantum wells for infrared optoelectronics
    Amsterdam : Elsevier
    Progress in Quantum Electronics 17 (1993), S. 93-164 
    Details
    ISSN: 0079-6727
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
    URL: http://linkinghub.elsevier.com/retrieve/pii/0079-6727(93)90005-T
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Computer modeling of dual-band HgCdTe photovoltaic detectors (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1286-1291 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of middle wavelength/long wavelength (MW/LW) dual-band HgCdTe photovoltaic detectors was examined theoretically. An original iteration scheme was used to solve the system of nonlinear continuity equations and the Poisson equation. The effect of composition and doping profiles on the heterojunction detector parameters is presented. It is assumed that the performance of photodiodes is due to thermal generation governed by the Auger mechanism. All quantities are functions of the electric potential and Fermi quasi-levels. The results of calculations are presented as maps showing spatial distribution of electrical potential, photoelectrical gain, sensitivity, and density of noise generation. The theoretical predictions of heterojunction device parameters are compared with available experimental data. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1380989
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Semiconductor ultraviolet detectors (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7433-7473 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band-gap semiconductors the most promising of which are diamond and AlGaN. The latest progress in development of AlGaN UV detectors is finally described in detail. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362677
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Long-wavelength HgCdTe photodiodes: n+-on-p versus p-on-n structures (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3505-3512 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of long-wavelength n+-on-p and p-on-n HgCdTe photodiodes is reexamined theoretically. It is assumed that the performance of photodiodes is due to thermal generation governed by the Auger mechanism. The influence of junction position on the R0A product, photoelectrical gain, and noise for both types of HgCdTe photodiodes operated at 77 K, with 0.1 eV base material, is considered. Especially, the R0A product as a function of cutoff wavelength and temperatures is analyzed in detail for both type of structures. For assumed doping concentrations in the base region of homojunctions (Na=5×1015 cm−3 for the n+-on-p structure and Nd=5×1014 cm−3 for the p-on-n structure), the influence of a p-type cap layer on the effective R0A product is more serious for p-on-n structures in comparison with influence of an n+-type layer on the R0A product for n+-on-p junctions. Therefore, to suppress the deleterious influence of cap layers (especially in the case of p-on-n junctions), a wider band-gap cap layer is necessary. For a given cutoff wavelength, the theoretical values of the R0A product for p-on-n photodiodes in the temperature range below 77 K are a little greater than for n+-on-p photodiodes, which is due to lower doping. In the higher temperature range for very long-wavelength photodiodes, p-type base devices are more advantageous. Results of calculations are compared with experimental data reported by other authors. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358644
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Theoretical modeling of long wavelength n+-on-p HgCdTe photodiodes (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2483-2489 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of long wavelength infrared high quality n+-on-p HgCdTe photodiodes is reexamined theoretically. It is shown that the performance can be explained taking into account only thermal generation governed by the Auger mechanism. The investigations are carried out for photodiodes operated in a temperature range between 300 and 50 K. The effect of doping profiles on the photodiode parameters (R0A product, I–V characteristic, photoelectrical gain and noise) is solved by forward-condition steady-state analysis. The theoretical predictions of photodiode parameters are compared with experimental data obtained at the Laboratoire d'Electronique de Technologie et d'Instrumentation (Grenoble, France). Excellent agreement between both types of results has been achieved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363084
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...