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  • 1
    Electronic Resource
    Electronic Resource
    Photosensitivity of InP/CdS heterostructures in linearly polarized light (1997)
    Springer
    Semiconductors 31 (1997), S. 194-196 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Measurements have been made of the photosensitivity of (p + -p −)-InP/n +-CdS structures formed by the growth of indium phosphide and cadmium sulfide films on p +-InP substrates with (100) crystallographic orientation. These structures exhibit a photosensitivity S i ⋍0.13A/W in the spectral range from 1.3 to 2.4 eV at T=300 K. Polarizational photosensitivity was observed for oblique incidence of linearly polarized light on the CdS surface of these structures. The induced photopleochroism of these structures is governed by the angle of incidence θ. The photopleochroism increases proportionally to θ2 and its maximum value is found to be ∼50% at θ⋍75–80°. The maximum azimuthal photosensitivity was found to be ∼0.13A/W·deg. Structures consisting of CdS deposited on InP can be used as polarimetric photodetectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187106
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  • 2
    Electronic Resource
    Electronic Resource
    Photosensitivity of porous silicon-layered III–VI semiconductors heterostructures (1998)
    Springer
    Semiconductors 32 (1998), S. 320-321 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Rectifying heterojunctions with photosensitivity 1–5 V/W at T=300 K were obtained by forming optical contacts between free porous silicon and layered InSe and GaSe semiconductors. A wide-band photovoltaic effect was obtained when these heterostructures were illuminated on the free porous silicon plate side. The long-wavelength photosensitivity edge of these devices is determined by direct transitions in InSe or GaSe, respectively. It is concluded that heterojunctions based on free porous silicon plates can be used as wide-band phototransducers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187558
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Photosensitivity of thin-film structures based on laser-deposited CuIn(TexSe1−x )2 layers (1998)
    Springer
    Semiconductors 32 (1998), S. 409-411 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Thin films of the solid solutions CuIn(TexSe1−x )2 (0〈x〈1) exhibiting chalcopyrite structure were obtained by the method of laser deposition. Using half-transmitting indium layers, Schottky diodes were prepared on the basis of the films obtained. The spectral dependence of the sensitivity as a function of the ratio between Te and Se was investigated by illuminating the structures through the In contact. Analysis of the experimental results showed that the region of spectral sensitivity of such thin-film structures depends on the tellurium content in the CuIn(TexSe1−x )2 layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187406
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  • 4
    Electronic Resource
    Electronic Resource
    Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se2 solar cells (1997)
    Springer
    Semiconductors 31 (1997), S. 681-685 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The photoelectric properties of thin-film ZnO/CdS/Cu(In,Ga)Se2 solar cells were studied by polarization photoactive absorption spectroscopy. It was shown that the thin-film solar cells have a high efficiency relative to the intensity of unpolarized radiation in the photon energy range from 1.2 to 2.5 eV. The induced photopleochroism coefficient P I increases with the angle of incidence of the incident radiation as P I ∼θ 2 and at 70° it reaches 17–20% with photon energy 1.3 eV. Oscillations of the photopleochroism were also observed. These results are discussed taking into account the antireflection effect. The results obtained by us make it possible to use such solar cells as wide-band photosensors for linearly polarized radiation and for monitoring the production of high-efficiency, thin-film solar cells based on ternary semiconductors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187065
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  • 5
    Electronic Resource
    Electronic Resource
    Photovoltaic effect in a p-type CuInSe2/green leaf heterojunction (1997)
    Springer
    Semiconductors 31 (1997), S. 97-99 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Photosensitive p-type CuInSe2/green leaf heterojunctions are fabricated. The photocurrent polarization indicatrix, as well as the spectral dependences of the quantum efficiencies for photoconversion and of the natural photopleochroism of the heterojunctions, are measured. The polarization dependence of the photosensitivity suggests that the upper valence band in CuInSe2 is of type G7. A window effect is observed in the sensitivity ratio and these heterojunctions may find applications as photoconverters for the intensity and polarization of light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187111
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  • 6
    Electronic Resource
    Electronic Resource
    Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides (1997)
    Springer
    Semiconductors 31 (1997), S. 677-680 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The photoelectric properties of ITO/n-Si solar cells with ITO-side oblique incidence of linearly polarized light on the solar cells have been studied. Polarization photosensitivity and an increase in the relative quantum efficiency of photoconversion as a result of a decrease in reflection losses were found. The induced photopleochroism coefficient P I increases with the angle of incidence θ as P I ∼θ 2. The polarization photosensitivity of solar cells was studied as a function of the photon energy between the band gaps of the two contiguous materials. The results show that the solar cells studied can be used as selective polarimetric photosensors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187064
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  • 7
    Electronic Resource
    Electronic Resource
    Photoelectric properties of n-CdS/p-InP heterojunctions (1998)
    Springer
    Semiconductors 32 (1998), S. 61-66 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The polarization method for studying photoactive absorption is used to investigate the photoconversion processes in CdS/InP heterojunctions as a function of the orientation of the indium phosphide substrate. The results of these investigations demonstrate the sensitivity of the photoelectric processes to several factors, including the crystallographic orientation of the p-type InP substrate and the optical quality of the CdS layer. The induced photopleochroism coefficient of these heterojunctions increases proportionally to the square of the angle of incidence (P I ∼Θ2). Such CdS/InP heterojunctions can be employed as polarization-photosensitive devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187360
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  • 8
    Electronic Resource
    Electronic Resource
    Photoelectric properties of structures based on TlInS2 single crystals (1998)
    Springer
    Semiconductors 32 (1998), S. 67-70 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The photovoltaic effect in heterocontacts of various types, viz., In/TlInS2, InSe/TlInS2, and GaSe/TlInS2, is investigated. The relative photoconversion quantum efficiency of these structures is studied as a function of the energy of the incident photons and the polarization plane of linearly polarized light. It follows from photosensitivity measurements that the photosensitive structures obtained can be employed as broad-band and selective photosensors of optical radiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187361
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    Paper (German National Licenses)
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  • 9
    Electronic Resource
    Electronic Resource
    Physical properties of CuxAg1−x In5S8 single crystals and related surface-barrier structures (1998)
    Springer
    Semiconductors 32 (1998), S. 933-936 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The electrical properties and photoluminescence spectra of single crystals of the ternary compounds CuIn5S8, AgIn5S8 and their solid solutions have been investigated. We have determined the type of conductivity, the mobility, charge carrier concentrations and energies of the radiative transitions in these materials. We have fabricated surface-barrier structures from these single crystals and measured the voltaic photosensitivity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187539
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  • 10
    Electronic Resource
    Electronic Resource
    Photoelectric properties of porous and single-crystal silicon heterocontacts (1997)
    Springer
    Semiconductors 31 (1997), S. 197-199 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The polarization photosensitivity of a heterocontact of porous and single-crystal silicon is experimentally investigated. A maximum in the photosensitivity is observed at ∼1 mA/W at energies in the range 1.2–2.3 eV, when linearly polarized light is obliquely incident on the surface of the porous-silicon layer. The photopleochroism of these heterostructures depends on the angle of incidence θ, varies roughly as ∼θ2, and reaches the maximum value of ∼32% at θ⋍80°. Oscillations due to interference of natural and linearly polarized light in the porous-silicon layers are observed in the photocurrent and the photopleochroism of these structures. Heterostructures consisting of a layer of porous silicon on a silicon single crystal can find application as photoconverters of natural and linearly polarized light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187107
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