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  • 1
    Electronic Resource
    Electronic Resource
    Optical characterization of laser-induced crystallized silicon films (1996)
    Springer
    Applied physics 63 (1996), S. 333-336 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 78.66.Db; 61.80.Ba; 81.10.Eq
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV∼3 eV. However, the absorption coefficient was higher than 102 cm-1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient (〉104 cm-1) in the low photon energy range (1.1 eV∼1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3×1021 cm3 and the carrier mobility of 20 cm2/Vs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050394
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  • 2
    Electronic Resource
    Electronic Resource
    Lactobacillus acidophilus Group Lactic Acid Bacteria Applied to Meat Fermentation (1998)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 63 (1998), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Lactobacillus acidophilus group bacteria (L. acidophilus, L crispatus, L. amylovorus, L. gallinarum, L. gasseri, L. johnsonii), probiotic lactic acid bacteria, were applied to meat fermentation. Of six strains, L. gasseri (predominant lacto-bacilli in human intestinal tracts) JCM1131T exhibited greatest fermentation performance in meats. This strain resisted gastric acid and bile, and would thus have no detrimental effects in the intestinal tract. Inoculation of the strain depressed the propagation of S. aureus cells and their enterotoxin production during meat fermentation. Results suggest probiotic lactic acid bacteria could be effectively utilized for meat fermentation to produce healthy meat products.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1998.tb15782.x
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  • 3
    Electronic Resource
    Electronic Resource
    A conjugative plasmid pTE195 coding for drug resistance and virulence phenotypes from Salmonella naestved strain of calf origin
    Amsterdam : Elsevier
    Veterinary Microbiology 36 (1993), S. 197-203 
    Details
    ISSN: 0378-1135
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0378-1135(93)90087-N
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  • 4
    Electronic Resource
    Electronic Resource
    SiO2 formation by thermal evaporation of SiO in oxygen atmosphere used to fabrication of high performance polycrystalline silicon thin film transistors (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1018-1020 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A reactive evaporation of SiO in an oxygen atmosphere was investigated for forming a good interface of SiO2/Si. SiO2 films are formed at room temperature by evaporation of a SiO powder in an oxygen atmosphere with a flow rate of 2 sccm at a pressure of 1×10−4 Torr. The interface trapping density at SiO2/Si was lower than 5×1010 cm−2 eV−1. n- and p-channel Al-gate polycrystalline silicon thin film transistors (poly-Si TFTs) were fabricated at 270 °C with the present SiO2 films as a gate oxide and laser crystallized poly-Si films formed using a pulsed XeCl excimer laser. They showed good characteristics of a low threshold voltage of 1.1 V (n-channel) and −1.2 V (p-channel), and a high carrier mobility of 450 cm2/V s (n-channel) and 270 cm2/V s (p-channel).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110956
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  • 5
    Electronic Resource
    Electronic Resource
    Reduction of defects in laser-induced crystallized and amorphized silicon films using plasma hydrogenation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7377-7383 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Plasma hydrogenation of laser-crystallized and -amorphized films was investigated. The hydrogen concentration was determined to be 1.5 at. % using a method of laser-induced hydrogen effusion for 20-nm-thick crystallized films which were hydrogenated at 250 °C for 30 s. The defect density was reduced from 1×1017 to 4×1016 cm−3. The hydrogen concentration was 2.5 at. % for amorphized films of 12 nm-thickness. This low hydrogen concentration resulted in a low optical band-gap energy of 1.7 eV for amorphized films, while the width of the Urbach tail was 0.06±0.005 eV, which is close to that of hydrogenated amorphous silicon (a-Si:H) films fabricated using radio-frequency glow discharge (rf GD). The defect density of the laser-amorphized silicon films was reduced from 2×1020 to 4×1015 cm−3 eV−1 comparable to a-Si:H films fabricated by rf GD. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357962
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  • 6
    Electronic Resource
    Electronic Resource
    Pulsed laser-induced melting followed by quenching of silicon films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6592-6598 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphization and crystallization were studied through laser-induced melting of silicon films formed on quartz substrates induced by irradiation with a 30 ns XeCl excimer laser. Homogeneous and rapid solidification occurs and amorphous solid state can be formed when the melt duration is long enough to make the temperature gradient in liquid silicon lower than 1×105 K/cm at the Si/quartz interface. The solid state after homogeneous solidification is governed by recalescence caused by latent heat released at solidification. A completely amorphous state is formed when film thickness is thinner than 24 nm because latent heat reduces as film thickness decreases. Both crystalline and amorphous states were observed for film thickness above 24 nm because recalescence can cause crystalline grain growth. Complete crystallization occurs through interface controlled growth when the temperature gradient is higher than 1×105 K/cm. The velocity of liquid/solid interface is 0.6 m/s, which is too low to cause amorphization.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355097
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  • 7
    Electronic Resource
    Electronic Resource
    Pulsed laser-induced amorphization of silicon films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1281-1289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The reversible transition from crystalline to amorphous silicon was observed on films deposited on quartz substrates through laser-induced melting using a 30-ns pulsed XeCl excimer laser. A 20-nm-thick silicon film was completely melted and then amorphized. The melt duration exceeded 70 ns when the film was amorphized. The transition from liquid to the amorphous state would occur homogeneously throughout the film because the temperature gradient in molten silicon could be reduced to 1.0×105 K/cm (0.2 K/20 nm) at 70 ns after initiation of melt. The laser-amorphized film had a large mid-gap density of states of 5.3×1019 cm−3 eV−1. The density of states was remarkably reduced using a hydrogen plasma treatment at 250 °C for only 1 min. Thin-film transistors fabricated in a laser-amorphized film showed good characteristics with a carrier mobility of 0.6 cm2/V s after hydrogenation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349584
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  • 8
    Electronic Resource
    Electronic Resource
    Rapid crystallization of silicon films using electrical-current-induced joule heating (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5362-5367 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Melt-regrowth properties of 60-nm-thick silicon films were characterized in the case of electrical-current-induced joule heating. The electrical energy accumulated at a capacitance caused melting of the silicon films via joule heating with a maximum intensity at 1.5×106 W/cm2. The melt-regrowth duration increased from 6 to 75 μs as the capacitance increased to 0.05–1.5 μF. Crystalline properties of the silicon films were also investigated. 7 μm long crystalline grains with the (110) preferential crystalline orientation were observed using a transmission electron microscope. The tensile stress at 3.4×108 Pa remained in the films. The analysis of electrical conductivity resulted in a density of defect states of 3.5×1016 cm−3 in the films. The product of the generation efficiency, the carrier mobility and the average carrier lifetime was estimated to be ∼10−3 cm2/V. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367405
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  • 9
    Electronic Resource
    Electronic Resource
    Laser-induced melting of predeposited impurity doping technique used to fabricate shallow junctions (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 711-713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow p+ junctions have been fabricated using a new technique in which doping is accomplished by depositing boron film on a silicon surface by radio-frequency glow discharge (rf-GD) and melting locally with a pulsed XeCl excimer laser. Sheet resistivity as low as 15 Ω/(D'Alembertian) was obtained by irradiation of a single laser pulse. The junction depth was 0.07–0.3 μm, depending on the laser energy density. Electrical characteristics of p+-n junctions which were formed by the laser doping technique subsequently subjected to a 400 °C, 1-h furnace anneal show essentially ideal diode behavior with an ideality factor of 1.03.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339747
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  • 10
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing using the combustion of H2 with N2O (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1205-1207 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The combustion of H2 gas with N2O gas was investigated in order to rapidly heat substrate to a high temperature. A transient thermometry with a 100-nm-thick Cr film as a temperature sensor formed on quartz substrate was used to measure temperature change at the surface. The gas combustion was induced by heating a W filament. It propagated with a velocity higher than 100 m/s throughout a chamber for an initial total gas pressure of 500 Torr ([H2]/[N2O]=1). The sample surface is heated to 800 °C for an initial substrate temperature at 300 °C. The full heating time width at half maximum was 4.5 ms. This letter shows a possibility of millisecond-order rapid thermal treatment. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117412
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