Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 5006-5010 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen and helium implantation into GaAs, LiNbO3, and other crystals has been shown to produce planar or channel waveguides via defects/damage and/or carrier removal or compensation. We have measured implanted depth distributions of 1H, 2H, and 4He in GaAs and LiNbO3 as functions of ion energy, ion fluence, substrate temperature, and annealing temperature using secondary ion mass spectrometry. We have studied the defect depth distribution for hydrogen-implanted GaAs by transmission electron microscopy. We have determined the lateral spread of 1H and 2H ions implanted into GaAs by varying the angle of implantation; this relates to the increase in width of closely spaced parallel channel waveguides made using patterned masks.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 385-387 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strong n but weak p-carrier passivation was observed when Si- and Mg-implanted/annealed GaAs samples were exposed to a 2D plasma under identical conditions. Even though a discrete band of dislocation loops was present in both the samples, the 2D distribution in the two cases was remarkably different. In the Si-implanted sample the 2D followed the carrier distribution, whereas in the Mg-implanted sample it followed the distribution of dislocation loops. Phenomenological mechanisms of 2D interaction with dopants/dislocations in GaAs are postulated.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 569-571 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: F+ co-implantation at different doses and energies was performed into GaAs already implanted with Be+ at high dose (1015 cm−2) and low energy (20 keV), in order to reduce the beryllium diffusion during post-implant annealing. The redistribution behavior of Be and associated electrical effects were studied by secondary-ion mass spectrometry, transmission electron microscopy (TEM), Hall effect measurements, and current-voltage profiling. Be outdiffusion was reduced by co-implantation of F; more than 80% of the implanted Be was retained during rapid thermal annealing up to 850 °C. The dose and energy of the F implant strongly influenced Be electrical activation efficiency. High activation, up to 48.5%, was obtained when F was co-implanted at high dose (1015 cm−2) and low energy (10 keV). Hole profiles shown reduced electrical activation in the region where F and Be profiles overlapped and TEM studies indicated the formation of {111} coherent plates, possibly BeF2 precipitates, in the same region. The reduction of Be outdiffusion in F co-implanted samples led to high activation after annealing, and was believed to be due to chemical interaction between Be and F.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2540-2542 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved solid phase epitaxy of thin amorphous Si layers on GaAs using in situ plasma processing and subsequent annealing. High-resolution transmission electron microscopy of the SiO2/Si/GaAs structure shows that a Si layer (approximately-equal-to)20 A(ring) thick epitaxially crystallizes on GaAs after annealing at (approximately-equal-to)570 °C in N2. Metal-oxide-semiconductor capacitors fabricated on these structures confirm the high quality of these interfaces. By comparing a high- frequency (100 kHz) capacitance-voltage curve with a quasi-static one, interface state densities as low as 4×1012 eV−1/cm−2 were measured on both n- and p-type GaAs.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1190-1192 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carrier concentrations at a level of (approximately-greater-than)1×1019 cm−3 were achieved when Si-capped GaAs underwent rapid thermal oxidation (RTO) in Ar+0.1% O2 ambient at 850–1000 °C for 10–60 s followed by rapid thermal annealing (RTA) in Ar ambient at 850–950 °C. Carrier concentrations in the RTO only samples were in the range of 2–5×1018 cm−3. Kinetic data on the diffusion of Si under RTO and RTO+RTA conditions are presented. The enhancement in the electrical activation of the diffused Si during RTA appears to be partly due to its local atomic rearrangement and partly due to redistribution in the GaAs. Ohmic contacts to the doped layer were made using Au-Ge-Ni alloy and contact resistances of (approximately-less-than)0.1 Ω mm were obtained.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 602-604 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method is reported for reducing tunnel formation in p+-n Si, and a correlation is shown between tunnel defects and junction leakage. 11B+-implanted Si annealed for 30 min at 900 °C in N2 and subsequently deposited with W forms a high density of filamentary tunnel defects extending on the order of 0.1 μm from the W/Si interface. Reverse-bias leakage of 0.33-μm-deep junctions is −90 nA/cm2 at −5 V and the forward-bias ideality is 1.24 over eight decades of current. By contrast, for 11B+-implanted Si oxidized for 7 min in steam, tunnels if present are less than 0.01 μm in length. The reverse-bias leakage is −0.3 nA/cm2 at −5 V and the forward-bias ideality is 1.00. The 2×1019 cm−3 interfacial carrier concentration is the same for both deposits.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1681-1683 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Shallow (〈200 nm) Si profiles with doping levels in excess of 2×1018 cm−3 were reproducively obtained in GaAs by rapid thermal oxidation (RTO) of Si caps (50 or 160 nm) in 0.1% O2/Ar ambient at 850–1050 °C. The doping level as well as distribution of the diffused Si can be controlled by the thickness of the Si cap, RTO temperature, RTO time, and oxygen level in the annealing ambient. It appears that the generation of Si interstitials at the oxidizing surface of the Si cap during RTO is responsible for the Si diffusion into the underlying GaAs substrate.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1696-1698 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Enhancement of Schottky barrier height of Ti-Pt-Au on n-type GaAs was obtained by heavily (2×1018 cm−3) counter doping the near-surface region of the substrate. The p-type region was produced by recoil implantation of Mg from a Mg thin film (300 A(ring)) irradiated by a 60 keV As+ beam. The film was subsequently chemically etched. The recoil-implanted samples showed an enhancement of 140 meV in the Schottky barrier height following rapid thermal annealing in an AsH3 furnace at 850 °C for nominal zero second.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 1129-1132 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is demonstrated using rapid thermal annealing that the electrical activation of Si+-implanted GaAs capped with a plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SixNy) layer requires longer annealing times compared to capless annealing. The SIMS profiles of 2H from the GaAs samples onto which SixNy caps were deposited using deuterated ammonia showed that deuterium atoms diffuse readily into the implanted region during PECVD. The improvement in the electrical activation of the capped samples with annealing time correlates directly with decreasing concentration of the 2H in the GaAs. It is postulated that the H atoms diffusing into GaAs during PECVD are trapped by the implantation-induced damage and the delay in electrical activation corresponds to the time required for the release of the trapped H.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 344-353 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin Ti films sputter deposited onto single-crystal Si, thermal SiO2, and low-pressure chemical vapor deposited Si3N4 and SiOxNy (x≈y≈1) substrates have been rapid thermal annealed in N2 or Ar, with and without an amorphous Si overlayer, and the reactions followed using Auger elecron spectroscopy, transmission electron microscopy, electron diffraction, and sheet resistance measurements. A multilayer film is created in practically every case with each layer containing essentially a single reaction product, viz.,TiSix, TiOx, δ-TiN, or TiNxO1−x. The results are discussed in light of published Ti-Si-O and Ti-Si-N phase diagrams.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...