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  • 1
    Electronic Resource
    Electronic Resource
    Phase Change of Zr-Al-N and Nb-Al-N Films Prepared by Magnetron Sputtering Method (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 127 (Sept. 2007), p. 195-200 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: In order to examine the critical content of AlN for phase change from B1 type to B4 type,Zr-Al-N and Nb-Al-N pseudobinary films were synthesized with an inductively combinedrf-plasma assisted magnetron sputtering method. From phase identification of these films by XRDand Raman scattering methods, it is found that phase change from B1 structure to B4 one occurs inthe range from 30mol%AlN to 35mol%AlN for Zr-Al-N pseudobinary films and from 62mol%AlNto 70mol%AlN for Nb-Al-N pseudobinary films. The critical AlN content for Zr-Al-N pseudobinaryfilms shows excellent agreement with the value (33mol%AlN) predicted by band parameters. Thecritical content for Nb-Al-N pseudobinary films is larger than the predicted value (53mol%AlN). Itis suggested that the disagreement is attributed to a highly defective structure in Nb-Al-Npseudobinary films
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.127.195.pdf
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  • 2
    Electronic Resource
    Electronic Resource
    Characterization and Dissolution Behavior in a Physiological Solution of Heat-Treated CaTiO〈sub〉3〈/sub〉 Thin Films with Different Thicknesses (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 127 (Sept. 2007), p. 209-214 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Characterization of heat-treated CaTiO3 thin films of 10, 20, 30 and 50 nm in thicknessand their change after immersion in a simulated body fluid were investigated by grazing incidentangle X-ray diffractometry and Auger electron spectroscopy (AES). The CaTiO3 films wereprepared on titanium substrate by sputter-deposition of CaTiO3 target followed by heating in anelectric furnace at 873 K in air for 7.2 ks. The CaTiO3 films were immersed in 0.8% NaCl solutionfor 14 d. All the films before heat treatment were non-crystallized films and after heat treatment,only the 50-nm film was crystallized to perovskite-type CaTiO3. In AES in-depth profiles afterheating, Ca diffusion was not observed in the 50-nm film, whereas Ca diffusion toward the Tisubstrate was observed in the 10-, 20- and 30-nm films. After immersion for 14 d, the vicinity ofsurface of the 10, 20 and 30 nm thick CaTiO3 films were dissolved into the NaCl solution, while the50-nm thick CaTiO3 film was scarcely dissolved. Since dissolution from biomaterials in a humanbody has possibility to harm, the CaTiO3 film should be deposited more than 50 nm in thicknessand heat-treated at 873 K
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/24/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.127.209.pdf
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  • 3
    Electronic Resource
    Electronic Resource
    Electrical Property of Calcium-Zirconium-Indium Oxide by Irradiation (2005)
    s.l. ; Stafa-Zurich, Switzerland
    Materials science forum Vol. 480-481 (Mar. 2005), p. 579-584 
    Details
    ISSN: 1662-9752
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Radiation induced changes in electrical properties of calcium-zirconium-indium oxideceramics (CaZr0.9In0.1O3-d) were investigated using a fission reactor of Japan Materials Testing Reactor (JMTR). Electrical conductivity of CaZr0.9In0.1O3-d under the reactor irradiation increased by the Radiation Induced Conductivity (RIC), Radiation Induced Electromotive Force (RIEMIF)and Radiation Induced Electrical Degradation (RIED), caused by the electronic excitation. The RICand the RIEMF decreased gradually for the constant value of the reactor power with the increase of irradiation time. Moreover, it was confirmed by Post-irradiation Examination (PIE) experiments that the initial electrical and thermal properties were completely degraded by the irradiation. These radiation effects are attributed to point defects or their clusters produced by atomic displacements caused by neutron collisions and also by the radiolysis
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/10/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.480-481.579.pdf
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    Paper (German National Licenses)
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