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  • 1
    Electronic Resource
    Electronic Resource
    Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1583-1594 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have combined thermally stimulated-current (TSC) and capacitance–voltage (C–V) measurements to estimate oxide, interface, and effective border trap densities in 6–23 nm thermal, N2O, and N2O-nitrided oxides exposed to ionizing radiation or high-field electron injection. Defect densities depend strongly on oxide processing, but radiation exposure and moderate high-field stress lead to similar trapped hole peak thermal energy distributions (between ∼1.7 and ∼2.0 eV) for all processes. This suggests that similar defects dominate the oxide charge trapping properties in these devices. Radiation-induced hole and interface trap generation efficiencies (0.1%–1%) in the best N2O and N2O-nitrided oxides are comparable to the best radiation hardened oxides in the literature. After ∼10 Mrad(SiO2) x-ray irradiation or ∼10 mC/cm2 constant current Fowler–Nordheim injection, effective border trap densities as high as ∼5×1011 cm−2 are inferred from C–V hysteresis. These measurements suggest irradiation and high-field stress cause similar border trap energy distributions. In each case, even higher densities of compensating trapped electrons in the oxides (up to 2×1012 cm−2) are inferred from combined TSC and C–V measurements. These trapped electrons prevent conventional C–V methods from providing accurate estimates of the total oxide trap charge density in many irradiation or high-field stress studies. Fewer compensating electrons per trapped hole (∼26%±5%) are found for irradiation of N2O and N2O-nitrided oxides than for thermal oxides (∼46%±7%). More compensating electrons are also found for high-field electron injection than radiation exposure, emphasizing the significance of border traps to metal-oxide-semiconductor long term reliability. The primary effect of nitrogen on charge trapping in these oxides appears to be improvement of the near interfacial oxide in which border traps are found.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361002
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  • 2
    Electronic Resource
    Electronic Resource
    Comparison of interface trap densities measured by the Jenq and charge pumping techniques (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 3303-3306 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The validity of the Jenq technique for measuring the average density of interface traps Dit in metal-oxide-semiconductor devices at cryogenic temperatures (78 K) is assessed. Dit has been determined using both the Jenq technique, which is based on measurement of hysteresis in high-frequency capacitance-voltage data, and the more standard charge pumping technique. Excellent agreement (±10%) is found between the two techniques for a wide range of Dit values from 5×1010 to 1×1012 traps/cm2 eV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354553
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  • 3
    Electronic Resource
    Electronic Resource
    Time dependence of radiation-induced interface trap formation in metal-oxide-semiconductor devices as a function of oxide thickness and applied field (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3734-3747 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work is a study of the formation mechanisms of interface traps (Nit) in metal-oxide-semiconductor devices. The time-dependence of the Nit formation has been measured as a function of oxide thickness following a short radiation pulse. The Nit formation time is found to increase as t2.6ox when the gate bias is negative during irradiation and positive afterward. This result is in excellent agreement with predictions of a hydrogen transport model where drift of hydrogen ions (H+) is the rate-limiting step. When the gate bias during irradiation is positive, interpretation of the correlation between data and model suggests that the hydrogen ions are preferentially created near the Si-SiO2 interface. Finally, the Nit formation time is found to decrease with increasing oxide field as E−1.73ox. This result is compatible with the hydrogen transport model if the average displacement per hop is assumed to be proportional to Em.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349226
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  • 4
    Electronic Resource
    Electronic Resource
    Numerical simulation of 3-level charge pumping (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4415-4421 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The 3-level charge-pumping technique for characterizing electron and hole capture cross sections of fast interface traps in metal-oxide−semiconductor devices is studied via quasistatic one-dimensional numerical simulation. In general, these simulations confirm our understanding of the operation of the 3-level technique for carrier capture and emission. The simulations show that the previously developed simplified analysis of 3-level charge pumping is reasonably accurate in the emission regime. In contrast, previous simple analysis of the capture regime is found to be in error. For quantitatively accurate results, the effect of the trapped charge on band bending must be included. A revised analytical approach for the capture regime is developed which corrects this error.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350781
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  • 5
    Electronic Resource
    Electronic Resource
    Formation of interface traps in metal-oxide-semiconductor devices during isochronal annealing after irradiation at 78 K (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7434-7442 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the mechanisms of interface trap (Nit) formation in metal-oxide-semiconductor devices during isochronal annealing after irradiation at 78 K. Two distinct Nit formation processes are observed at 120 and 250 K. After irradiation but before annealing, some samples were injected with electrons to remove all the radiation-induced positive oxide charges. In these samples, the Nit formation process at 250 K is nearly eliminated, in agreement with previous reports, but the lower-temperature 120 K process increases substantially. Results are explained using a hydrogen model. We also discuss the use of substrate hot-electron injection, which is used to annihilate the radiation-induced positive charge, in some detail.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349739
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  • 6
    Electronic Resource
    Electronic Resource
    Low-dose aluminum and boron implants in 4H and 6H silicon carbide (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 2796-2805 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aluminum and boron p-type low-dose implants have been characterized in 4H- and 6H-SiC for anneals from 1300 °C to 1600 °C. In contrast to previous studies of heavily doped p-type layers, here we study more lightly doped layers for use as active regions in high-voltage power devices. Activation rates of the implanted ions, depth profiles from secondary mass ion spectroscopy, and surface roughness data using atomic force microscopy are presented as a function of anneal temperature. The temperature dependence of the free hole density and hole mobility are characterized with Hall effect measurements. For 1600 °C anneals, usable device quality p-type layers are obtained for both SiC polytypes and implant species. For anneals at or below ∼1500 °C, the implanted layers have much higher sheet resistivity due to the presence of unannealed compensating defects. These layers are not device quality. B-implanted layers have higher mobility, while activation of implanted Al is much higher and more uniform. Therefore, boron and aluminum have different advantages and disadvantages as p-type implants in SiC. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1392958
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  • 7
    Electronic Resource
    Electronic Resource
    Hall mobility and free electron density at the SiC/SiO2 interface in 4H–SiC (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3281-3283 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electron mobility and free electron density have been measured in 4H– and 6H–SiC metal-oxide-semiconductor inversion layers using the Hall effect. The 4H–SiC inversion layers are found to have very poor conductance which is caused by severe trapping of electrons at the Si/SiO2 interface. The trapping causes reduced conductance through a reduction in the number of free electrons in the inversion layer, and also because of a drop in the mobility due to increased Coulombic scattering. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1326046
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of oxidation and reoxidation on the oxide-substrate interface of 4H- and 6H-SiC (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1437-1439 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoelectron spectroscopy and sputter depth profiling were used to investigate SiO2 grown on 4H- and 6H-SiC with and without a reoxidation procedure. The oxides grown and oxide-substrate interfaces formed on 4H and 6H were similar in chemistry but different from Si(100). Reoxidation changes the structure of the oxide and the abruptness of the oxide-substrate interface. We propose a model for SiC oxidation where a transition layer containing Si–Si bonds is produced between the oxide and the SiC substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1290490
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  • 9
    Electronic Resource
    Electronic Resource
    Interface trap profile near the band edges at the 4H-SiC/SiO2 interface (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2250-2252 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transconductance of SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) is typically much lower in devices fabricated on the 4H-SiC polytype compared to 6H. It is believed that this behavior is caused by extreme trapping of inversion electrons due to a higher density of traps Dit at the SiC/SiO2 interface in 4H-SiC. Here we present an approach for profiling Dit versus energy in the band gap using a modified capacitance–voltage technique on large-area MOSFETs. We find that Dit increases towards the conduction band edge Ec in both polytypes, and that Dit is much higher in 4H- compared to 6H-SiC for devices fabricated in the same process lot. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126311
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  • 10
    Electronic Resource
    Electronic Resource
    Low-dose nitrogen implants in 6H–silicon carbide (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1896-1898 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Low-dose n-type nitrogen implants in 6H–SiC have been studied using the Hall effect. Previous studies of doping by implantation in SiC have concentrated on heavily doped layers such as required for transistor sources and drains. Here, we focus on more lightly doped layers, e.g., such as required for the active regions of high-voltage power devices. The low-dose N implants are found to activate more readily than high doses. Almost ideal N-implanted layers with a donor density of ∼1×1017/cm3 and a low residual acceptor density from implant damage of only ∼1.5×1015/cm3 have been obtained after a 1400 °C anneal. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126204
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