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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 537-542 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained InGaAsP/InP single quantum wells grown by low pressure metalorganic vapor phase epitaxy are studied by photoluminescence. We demonstrate that the analysis of the Arrhenius plot, specially modified to fit the temperature dependence of the integrated photoluminescence intensity, can be used as a complementary technique in order to identify different optical transitions that take place in more complex photoluminescence spectra. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 530-532 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic potential profile, energy levels, and their respective occupations are self-consistently calculated for δ-doped semiconductor films, taking into account the charge depleted by the surface. This effect is considered by requiring the Fermi level at the surfaces to be at some fixed value relative to the band gap edges. The electron concentration in the potential well is calculated for different values of the film thickness and of the surface chemical potential. The results show that these calculations can be helpful in determining the Fermi level pinning at the surface by fitting Hall concentrations of δ-doped samples.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1125-1127 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the observation of a novel effect in resonant tunneling devices (RTD): a self-induced persistent photoconductivity (SIPPC). The SIPPC manifests itself as a permanent shift of the resonant peak position to lower voltages, which is induced by the RTD itself and not by external sources. The SIPPC is due to the presence of DX centers in the device, which are ionized by light generated in the device itself through the recombination of electron-hole pairs created by impact ionization of hot electrons in the depletion layer of the device. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Hyperfine interactions 28 (1986), S. 785-788 
    ISSN: 1572-9540
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Crystal field parameter have been determined from EPR spectra (77K) of LiNbO3∶Fe(III). Anomalous line shapes are described phenomenologically and saturation studies are compared with calculations using a second order dynamic spin-hamiltonian H′. Mössbauer spectra of LiNbO3∶Fe(III) have been interpreted by means of simulations using Liouville superoperators including a static fine-and a hyperfine spin-hamiltonian and H′. Calculations have been performed using an effective spin of 1/2, the supermatrix with dimension 288 and a reduced formalism (supermatrix with dimension 96).
    Type of Medium: Electronic Resource
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