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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8841-8843 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A defect state, defect B, was found in Ta2O5 after postdeposition annealing in O2 by a novel zero-bias thermally stimulated current spectroscopy technique. The activation energy ET was estimated to be about 0.3 eV. Evidence is given that defect B is a hole trap. We believe that defect B is an acceptor level in Ta2O5 due to Si substituting for Ta. The presence of Si contamination in Ta2O5 due to diffusion of Si from the Si substrate into Ta2O5 was confirmed by secondary-ion-mass spectrometry. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 1 (1992), S. 299-308 
    ISSN: 1057-9257
    Keywords: LPCVD ; Tantalum pentoxide ; High dielectric constant ; ULSI devices ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: A laminar flow low-pressure chemical vapour deposition (LPCVD) system (LAM IntegrityTM) has been used to deposit tantalum pentoxide (Ta2O5) from Ta(OEt)5 films in the presence of oxygen (O2) at 470 °C at a typical deposition rate of 4 nm min-1. Uniformities of 〈1.5% (SD 1σ) over a 150 mm silicon substrate were obtained. The layers were annealed under different conditions. It was discovered that the films did not change their stoichiometry as determined by Rutherford backscattering (RBS). The as-deposited films were amorphous but became crystalline (β-Ta2O5) at temperatures 〉 700 °C. The transmission electron microscopy (TEM) results on crystallisation behaviour were supported by X-ray diffraction data. The electrical properties of the Ta2O5 films have been characterised using MIS (metal/insulator/silicon) capacitor structures. Leakage values of 〈10-6 A cm-2 at 6 MV cm-1 equivalent applied electric field and breakdown strengths of 〉7 MV cm-1 at 1.6 μA were obtained for annealed layers. Compound dielectric constants (native silicon oxide thickness of about 2.5 nm plus Ta2O5 of various thicknesses) between 14 and 〉30 have been measured. The electrical properties reveal the potential use of Ta2O5 as a storage capacitor dielectric in 64 and 256 Mbit DRAM (dynamic random access memory) devices.
    Additional Material: 13 Ill.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 5 (1995), S. 163-175 
    ISSN: 1057-9257
    Keywords: ULSI ; high dielectric constant ; metal oxides ; deposition ; annealing ; characterisation ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Flims of metal oxides, such as Ta2O5, Nb2O5, Al2O3, HfO2, ZrO2 and TiO2 have been fabricated by use of different precursor materials, deposition techniques and annealing techniques. Several analytical methods were applied to study the layers. New data of fundamental properties of these metal oxides are reported and related to practical features that are of importance in device design and manufacturing of advanced, highly integrated devices. This overview may facilitate the choice of an optimal combination of precursor material, deposition technique and corresponding annealing procedure for a specific application of these metal oxide films in microelectronics.
    Additional Material: 5 Ill.
    Type of Medium: Electronic Resource
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