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• 1
Electronic Resource
Springer
Journal of experimental and theoretical physics 91 (2000), S. 1250-1260
ISSN: 1090-6509
Source: Springer Online Journal Archives 1860-2000
Topics: Physics
Notes: Abstract Long-term resistance relaxations induced by uniaxial compression in (001)p-GaAs/Al0.5Ga0.5 As heterostructures are observed, and the main properties of these relaxations are investigated: the dependence of their character on the direction of the uniaxial compression, the change in concentration of current carriers during the relaxation processes, and the quenching of the relaxations by temperature, illumination, and high electric fields. It is found that the character of the relaxation process is different for compression directions [110] and $$[1\bar 10]$$ : in the first case the concentration of two-dimensional holes in the quantum well decreases in the course of the relaxation, while in the second case it increases. A model is proposed in which the cause of the relaxations of the piezoresistance and the anisotropic character of these relaxations is assumed to be the piezoelectric field, the value of which, according to estimates, is |E z| = 1.152 × 104 V/cm per kbar.
Type of Medium: Electronic Resource
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• 2
Electronic Resource
Woodbury, NY : American Institute of Physics (AIP)
Applied Physics Letters 79 (2001), S. 1471-1473
ISSN: 1077-3118
Source: AIP Digital Archive
Topics: Physics
Notes: Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect. © 2001 American Institute of Physics.
Type of Medium: Electronic Resource
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