Library

feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1471-1473 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cooling of electrons in a heavily doped silicon by quasiparticle tunneling using a superconductor–semiconductor–superconductor double-Schottky-junction structure is demonstrated at low temperatures. In this work, we use Al as the superconductor and thin silicon-on-insulator (SOI) film as the semiconductor. The electron–phonon coupling is measured for the SOI film and the low value of the coupling is shown to be the origin of the observed significant cooling effect. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
  • 2
    ISSN: 1090-6509
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Long-term resistance relaxations induced by uniaxial compression in (001)p-GaAs/Al0.5Ga0.5 As heterostructures are observed, and the main properties of these relaxations are investigated: the dependence of their character on the direction of the uniaxial compression, the change in concentration of current carriers during the relaxation processes, and the quenching of the relaxations by temperature, illumination, and high electric fields. It is found that the character of the relaxation process is different for compression directions [110] and $$[1\bar 10]$$ : in the first case the concentration of two-dimensional holes in the quantum well decreases in the course of the relaxation, while in the second case it increases. A model is proposed in which the cause of the relaxations of the piezoresistance and the anisotropic character of these relaxations is assumed to be the piezoelectric field, the value of which, according to estimates, is |E z| = 1.152 × 104 V/cm per kbar.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...