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  • 1
    Electronic Resource
    Electronic Resource
    Investigation of the heteroexpitaxial structures {p-3C/n-6H}-SiC (1997)
    Springer
    Semiconductors 31 (1997), S. 926-928 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The parameters of the epitaxial structures {3C/6H}-SiC have been investigated. The heteroepitaxial growth was conducted by sublimation epitaxy in an open system. The presence of the 3C polytype was confirmed by x-ray investigations. The capacitance-voltage and current-voltage characteristics and the electroluminescence spectra of the p-n structures were investigated. It was found that a thin, slightly doped, defective p-6H-SiC layer was formed between p-3C-SiC and n-6H-SiC in the heteropolytypic structures; this layer detetmined the electrical properties of the diode structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187154
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  • 2
    Electronic Resource
    Electronic Resource
    Radiation defects in n-6H-SiC irradiated with 8 MeV protons (2000)
    Springer
    Semiconductors 34 (2000), S. 861-866 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Capacitance methods and electron spin resonance (ESR) were applied to study deep centers in n-6H-SiC irradiated with 8 MeV protons. Schottky diodes and p-n structures grown by sublimation epitaxy or commercially produced by CREE Inc. (United States) were used. The type of the irradiation-induced centers is independent of the material fabrication technology and the kind of charged particles used. Irradiation results in an increase in the total concentration of donor centers. The possible structure of the centers is suggested on the basis of data on defect annealing and ESR.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1188089
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  • 3
    Electronic Resource
    Electronic Resource
    Structural defects and deep-level centers in 4H-SiC epilayers grown by sublimational epitaxy in vacuum (2000)
    Springer
    Semiconductors 34 (2000), S. 1133-1136 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract The parameters of deep-level centers in lightly doped 4H-SiC epilayers grown by sublimational epitaxy and CVD were investigated. Two deep-level centers with activation energies E c -0.18 eV and E c -0.65 eV (Z1 center) were observed and tentatively identified with structural defects of the SiC crystal lattice. The Z1 center concentration is shown to fall with decreasing uncompensated donor concentration N d -N a in the layers. For the same N d -N a , the Z1 center concentration is lower in layers with a higher dislocation density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1317570
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  • 4
    Electronic Resource
    Electronic Resource
    6H-SiC epilayers as nuclear particle detectors (2000)
    Springer
    Semiconductors 34 (2000), S. 243-249 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Schottky diodes based on the n-n + 6H-SiC epilayers grown by sublimation epitaxy and also the layers produced by CREE company (USA) were used as detectors of α-particles of spontaneous decay. Since the thickness of n-layers was smaller than the range of the particles, geometrical parameters of the experiment differed from conventional ones; in the latter case, a particle is brought to rest in the region of electric field in the detector. The calculated and experimental data were compared to study the special features of transport of nonequilibrium charge under the conditions of complete and partial depletion of the structure. It is shown that characteristics of the material that govern the transport of charge carriers can be deduced from the analysis of the behavior of the signal amplitude and the shape of the pulse-height spectrum in relation to bias voltage applied to the Schottky diode. It follows from the results that the present-day sublimation-grown SiC layers are suitable for use as the basis for fabrication of nuclear particle detectors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1187940
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  • 5
    Electronic Resource
    Electronic Resource
    Structural defects in 6H-SiC substrates and their effect on the sublimation growth of epitaxial layers in vacuum (2000)
    Springer
    Physics of the solid state 42 (2000), S. 1422-1426 
    Details
    ISSN: 1063-7834
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The structural perfection of silicon carbide substrates and homoepitaxial layers grown on the substrates by sublimation has been studied by x-ray diffraction (topography and diffractometry) and optical microscopy. The optimum diffraction conditions (hkil reflections, radiation wavelength λ, and recording geometry) for revealing “micropipes” of the dislocation nature are determined. It is shown that the growth conditions used make it possible to obtain highly perfect epitaxial layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1307045
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  • 6
    Electronic Resource
    Electronic Resource
    Radiation defects in n-4H-SiC irradiated with 8-MeV protons (2000)
    Springer
    Semiconductors 34 (2000), S. 1016-1020 
    Details
    ISSN: 1063-7826
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: Abstract Capacitance-related methods and electron spin resonance were used to study the deep-level centers formed in n-4H-SiC as a result of irradiation with 8-MeV protons. For the samples, Schottky diodes and p-n structures formed on the layers either obtained by sublimational epitaxy or produced commercially by CREE Inc. (United States) were used. It was found that the type of centers introduced by irradiation is independent of the technology of the material growth and the type of charged particles. On the basis of the results of annealing the defects and the data of electron spin resonance, the possible structure of the centers is suggested.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1134/1.1309411
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  • 7
    Electronic Resource
    Electronic Resource
    Amplification of the signal in triode structures of ion detectors based on 6H-SIC epitaxial films (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4447-4449 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of about 50 times the inneramplification of signals in SiC-based detectors of short-range ions is shown. The detector has an n–p–n+-like structure, where the p-type base was grown epitaxially on a 6H n+-SiC substrate. To complete the structure a Schottky barrier was made on top. Detector parameters were investigated in a "floating base" regime. Alpha particles from 244Cm were used and the augmentation of signal (E) with increasing applied voltage (U) was investigated. A superlinear increase of E was observed with a significant (tens of times) amplification of the introduced by the alpha particle nonequilibrium charge. It was also found that the nonuniformity of the diffusion-drift carrier transport parameters in the films does not exceed 10%. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1428765
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+nn+ structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5464-5468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron diffusion can be used to compensate the n-type layer of a p+nn+ 6H-silicon carbide structure in order to increase its high-voltage capabilities. Measurements under reverse biases for a current range from 10 to 500 μA show that this process is very efficient for working temperatures about 300 K. Indeed we obtained a voltage of 670 V for a reverse current of 10 μA instead of the 120 V calculated for a structure without boron diffusion. Nevertheless, the breakdown voltage decreases rapidly when the temperature increases. Capacitance measurements show that the measured doping level in the n-type layer evolves in the same way as the temperature (it ranges from 1013 cm−3 at 300 K to 1017 cm−3 at 500 K). A great concentration of boron seems to be responsible for this doping variation with temperature. Admittance spectroscopy reveals the presence of D centers at 0.62 eV above the valence band associated to boron at concentration similar or superior to nitrogen concentration in the n-type layer. The increase of the doping level with the temperature is responsible for this decrease of the breakdown voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362736
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