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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 11 (1989), S. 455-466 
    ISSN: 0392-6737
    Keywords: Infra-red and Raman spectra and scattering
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto In questo lavoro si è condotta una completa analisi, dal punto di vista delle polarizzazioni, dello spettro Raman del GaS, per energie di eccitazione al di sotto del «gap» indiretto. Al fine di identificare le combinazioni di secondo ordine e i modi proibiti indotti da difetti, sono state eseguite anche misure di trasmittanza e riflettanza nell'infrarosso. L'impiego di tutte le possibili regole di selezione, applicate sia agli spettri Raman sia a quelli IR, ha permesso sempre di individuare i punti di simmetria dei modi coinvolti nello spettro Raman e, quando possibile, di assegnare le principali strutture non di Γ a modi dei puntiM oK. Si è cosí pervenuti a numerose nuove attribuzioni, contestando anche alcune precedenti assegnazioni, basate solo su studi separati degli spettri Raman o IR.
    Abstract: Резюме Предлагается поляризационный анализ спектра комбинацонного рассеяния в GaS для энергий возбуждения ниже непрямой запрещеннои зоны. Чтобы определить комбинации втрого порядка и дефект, индуцированный запрешеенным модами, которые появляются в спектрах, помимо шести хорошо известных Γ-фононов, вяшолняются также измерения пропускания и отражения инфракрасного излучения дляE⊥c иE∼c. Все имеюэиеся правила отбора применяются к данным по комбинационному рассеянию и к инфракрасым данным, что позволяет идентифицировать точки высокой симметрии для фононов, фигурирующие в рассеянии и, по возможности, описать главные не-Γ-структуры спектров. Этот анализ позволяет получить некоторые новые признаки, основанные на раздельном исследовании спектров комбинационного рассеяния и инфракрасных спектров.
    Notes: Summary A complete polarization analysis of the GaS Raman spectrum, for excitation energies below the indirect energy gap, is reported. In order to assign second-order combinations and defect-induced forbidden modes, that appear in the spectra besides the six well-known Γ-phonons, also IR transmittance and reflectance measurements, for bothE⊥c andE‖c, have been performed. All the available selection rules are applied to both Raman and IR data, allowing to identify the high-symmetry points of phonons involved in the scattering and, when possible, to ascribe the main non-Γ structures of the spectra to the knownK andM point modes. This analysis brings to several new attributions, also ruling out some previous assignments, based on the separate study of either Raman or IR spectra.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Il nuovo cimento della Società Italiana di Fisica 10 (1988), S. 519-528 
    ISSN: 0392-6737
    Keywords: Infra-red and Raman spectra and scattering
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Description / Table of Contents: Riassunto Sono riportati gli spettri di scattering Raman e assorbimento IR del second'ordine nel 2H−SnS2. È stata studiata la dipendenza degli spettri Raman dalla temperatura, dalla lunghezza d'onda di eccitazione e dalla polarizzazione; sono messi in evidenza effetti di risonanza. Le assegnazioni delle bande del second'ordine sono discusse in base alle regole di selezione applicabili. Negli spettri del second'ordine sono stati considerati i contributi dei fononi dei punti di alta simmetria diversi da Γ.
    Abstract: Резюме Исследуется Рамановское рассеяние второго порядка и спектры инфракрасного поглощения 2H−SnS2. Изуачвются зависимости Рамановских спектров от температуры, длины волны возбуждения и поляризации; также учитываются резонансные эффекты. На основе правил отбора обсуждается задание зон второго порядка. При исследовании учитывается роль фононов для точек высокой симметрии, отличных от Г, в спектрах второго порядка.
    Notes: Summary The second-order Raman scattering and infra-red absorption spectra of 2H−SnS2 are reported. The temperature, excitation wavelength and polarization dependences of Raman spectra are studied; resonance effects are put in evidence. The assignment of the second-order bands is discussed on the basis of the appliable selection rules. The role of phonons of high symmetry points different from Γ in second-order spectra is also taken into account.
    Type of Medium: Electronic Resource
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  • 3
    ISSN: 0749-6036
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Superlattices and Microstructures 16 (1994), S. 51 
    ISSN: 0749-6036
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Physica B: Physics of Condensed Matter 185 (1993), S. 352-356 
    ISSN: 0921-4526
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5642-5644 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the far-infrared reflectivity spectra of two series of InAs/GaSb superlattices grown with GaAs- or InSb-like interfaces. Significant differences in the spectra induced by the interface bond type can be observed. The theoretical simulation of the experimental data allowed us to accurately determine the energy of the interface TO phonons and the actual thickness of the region in which they are localized. The inactivity of the InAs TO phonon vibration at the interface can be explained by modeling a nonhomogeneous strain accommodation across the heterointerfaces. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 786-792 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural and vibrational properties of superlattices composed of many periods of highly mismatched InAs and GaAs layers have been studied by means of x-ray diffraction and Raman scattering as a function of the sample geometry. X-ray diffraction measures the average lattice mismatch between the superlattice and the substrate. The long-range order influences the propagative acoustic phonons whereas strain and confinement effects compete in determining the optic vibration frequencies of the InAs layers. The linewidth of the main superlattice peak in the diffraction patterns and the scattering intensities of the acoustic phonons are related to the actual shape of the interfaces. We find that the stability of the structures depends on the total number of periods, in agreement with the predictions of equilibrium elasticity theory. However, the competition between the different relaxation processes is governed by the individual layer thicknesses.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2060-2062 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present high resolution measurements of the far infrared reflectance and absorbance of InAs/AlSb type II heterostructures, grown on GaAs substrates by molecular beam epitaxy. Quantum wells grown with AlAs-like interfaces show broadening and blue shifting of the InAs transverse optical (TO) phonon compared to samples with InSb-like interfaces. This is explained by incorporation of arsenic in the AlSb barriers. The InSb-interface mode, recently reported from Raman investigations, could be observed in the multiple quantum well. Two lines are observed, which are attributed to the normal (AlSb on InAs) and the inverted (InAs on AlSb) interfaces. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 1570-1572 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Si-GaAs(001) superlattices have been grown by molecular beam epitaxy. X-ray interference measurements and Raman spectroscopy studies in the acoustic range for (Si)2(GaAs)28 and (Si)3(GaAs)50 superlattice structures demonstrate that pseudomorphic growth conditions were achieved. Raman data in the optical range show large (∼50–70 cm−1) confinement- and strain-induced shifts of the Si-like optical modes.
    Type of Medium: Electronic Resource
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  • 10
    ISSN: 0020-0891
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Physics
    Type of Medium: Electronic Resource
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